NTTFS4C13N Power MOSFET 30 V, 38 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 9.4 mW @ 10 V 30 V 38 A 14 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 11.7 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.06 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.8 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 80°C PD N−CHANNEL MOSFET MARKING DIAGRAM 3.73 W 1 S S S G 1 TA = 25°C ID TA = 80°C 7.2 A 5.2 TA = 25°C PD 0.78 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 38 A Power Dissipation RqJC (Note 1) TC = 25°C PD 21.5 W TA = 25°C, tp = 10 ms IDM 68 A IDmax 70 A TJ, TSTG −55 to +150 °C TC =80°C Current Limited by Package S (1,2,3) 11.4 Power Dissipation RqJA (Note 2) Pulsed Drain Current G (4) 8.5 TA = 80°C Steady State D (5−8) TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) 27 WDFN8 (m8FL) CASE 511AB 4C13 A Y WW G 4C13 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS4C13NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel WDFN8 (Pb−Free) 5000 / Tape & Reel IS 19 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 22 mJ NTTFS4C13NTWG Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is absolute maximum rating. Parts are tested at TJ = 25°C Vqs = 10 V, IL = 15 Apk, EAS = 11 mJ. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 1 1 Publication Order Number: NTTFS4C13N/D NTTFS4C13N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 5.8 Junction−to−Ambient – Steady State (Note 4) RqJA 60.8 Junction−to−Ambient – Steady State (Note 5) RqJA 160 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 33.5 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = TBD A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.9 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 4.8 mV/°C VGS = 10 V ID = 30 A 7.5 9.4 VGS = 4.5 V ID = 12 A 11.2 14 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 40 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 770 VGS = 0 V, f = 1 MHz, VDS = 15 V 443 pF 127 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 7.8 Threshold Gate Charge QG(TH) 1.4 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.7 Gate Plateau Voltage VGP 3.6 V 15.2 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.165 2.9 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4C13N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 9 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 35 tf 5 td(ON) 6.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 13 26 ns 16 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.69 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 12.1 ns 11.3 9.7 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTTFS4C13N TYPICAL CHARACTERISTICS 10 V 70 6.5 V ID, DRAIN CURRENT (A) VDS = 5 V 4.5 V 60 4V 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 3.0 V 10 0 0 1 2 3 40 30 20 10 TJ = 25°C 4 5 0 0 1 1.5 2 2.5 3 3.5 4 4.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 5 0.022 TJ = 25°C 0.020 0.018 0.016 VGS = 4.5 V 0.014 0.012 0.010 0.008 0.006 VGS = 10 V 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 ID = 30 A VGS = 10 V VGS = 0 V TJ = 150°C 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.014 1.6 TJ = 125°C TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.015 3.0 50 2.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 60 4.2 V ID, DRAIN CURRENT (A) 70 1.4 1.3 1.2 1.1 1 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 10 −25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4C13N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 900 Ciss 800 VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 700 600 Coss 500 400 300 200 Crss 100 0 0 5 10 15 20 25 30 8 7 6 5 Qgd 4 3 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A Qgs 2 1 0 0 2 4 6 8 10 12 14 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 16 30 VGS = 0 V IS, SOURCE CURRENT (A) 100 t, TIME (ns) QT 9 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V tr td(off) 10 td(on) tf 1 25 20 TJ = 25°C 15 TJ = 125°C 10 5 0 1 10 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 12 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 ms 10 100 ms 1 ms 10 ms 1 0.1 11 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.01 0.1 dc 1 10 100 ID = 15 A 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4C13N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 50 45 ID, DRAIN CURRENT (A) 40 GFS (S) 35 30 25 20 15 10 TA = 25°C TA = 85°C 10 5 1 1.0E−08 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 NTTFS4C13N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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