ONSEMI NTGD3147FT1G

NTGD3147F
Power MOSFET and
Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6
Features
•
•
•
•
•
•
Fast Switching
Low Gate Change
Low RDS(on)
Low VF Schottky Diode
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
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P−CHANNEL MOSFET
V(BR)DSS
−20 V
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
Symbol
Value
Unit
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
ID
−2.2
−1.6
A
Steady State
TA = 25°C
TA = 85°C
t≤5 s
TA = 25°C
Steady State
TA = 25°C
PD
1.0
tp = 10 ms
IDM
−7.5
A
TJ, TSTG
−25 to
150
°C
Source Current (Body Diode)
IS
−0.8
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
VF Max
IF Max
0.45 V
1.0 A
Symbol
Value
Unit
VRRM
20
V
DC Blocking Voltage
VR
20
V
Average Rectified Forward Current
IF
1
A
Parameter
G
P−Channel MOSFET
Parameter
Symbol
Value
Unit
Junction−to−Ambient – Steady−State (Note 1)
RqJA
125
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
100
°C/W
Junction−to−Ambient Steady−State (Note 2)
RqJA
235
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm2 [2 oz] including traces).
May, 2008 − Rev. 0
1
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TC MG
G
1
TC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
THERMAL RESISTANCE RATINGS
© Semiconductor Components Industries, LLC, 2008
A
K
W
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Peak Repetitive Reverse Voltage
−1.6 A
S
1.3
Operating Junction and Storage Temperature
200 mW @ −2.5 V
20 V
−2.5
t≤5 s
Pulsed Drain Current
−2.2 A
D
Drain−to−Source Voltage
Power Dissipation
(Note 1)
145 mW @ −4.5 V
VR Max
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Continuous Drain
Current (Note 1)
ID Max
SCHOTTKY DIODE
Applications
Parameter
RDS(on) Max
A
1
6
K
S
2
5
N/C
G
3
4
D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGD3147F/D
NTGD3147F
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
14.2
VGS = 0 V,
VDS = −16 V
mV/°C
TJ = 25°C
−1.0
TJ = 85°C
−10
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
±100
nA
−1.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
−0.5
−0.95
3.0
mV/°C
VGS = −4.5 V
ID = −2.2 A
90
145
VGS = −2.5 V
ID = −1.6 A
140
200
VDS = −5.0 V, ID = −2.2 A
4.5
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
CRSS
400
75
40
Total Gate Charge
QG(TOT)
3.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.0
td(ON)
7.5
VGS = −4.5 V, VDS = −10 V,
ID = −2.2 A
pF
5.5
0.5
nC
0.9
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDS = −10 V,
ID = −1.0 A, RG = 6.0 W
tf
6.2
ns
14.5
18.4
DRAIN−TO−SOURCE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Time
VGS = 0 V
ID = −0.8 A
TJ = 25°C
−0.8
1.2
V
12
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −0.8 A
QRR
8.0
4.0
4.0
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTGD3147F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.5 A
Min
0.32
0.4
V
IF = 1.0 A
0.36
0.45
Maximum Instantaneous
Reverse Current
IR
VR = 10 V
0.04
1.0
VR = 20 V
0.21
5.0
Typ
Max
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 75°C unless otherwise noted)
Symbol
Test Conditions
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.5 A
Min
0.27
IF = 1.0 A
0.31
Maximum Instantaneous
Reverse Current
IR
VR = 10 V
0.77
VR = 20 V
2.65
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Maximum Instantaneous
Forward Voltage
VF
Maximum Instantaneous
Reverse Current
IR
Test Conditions
Typ
IF = 0.5 A
0.22
IF = 1.0 A
0.27
VR = 10 V
8.75
VR = 20 V
37.37
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3
Min
Max
Unit
V
mA
NTGD3147F
TYPICAL PERFORMANCE CHARACTERISTICS
VGS = −3.5 V to −4.5 V −2.6 V
−2.5 V
−2.4 V
7
6
5
−2.2 V
4
3
−2.0 V
2
−1.8 V
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1
2
3
7
6
4
3
2
0
4
TJ = 25°C
0.30
0.25
0.20
ID = −2.2 A
0.15
0.10
0.05
2
2.5
3
3.5
4
4.5
5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
3
0.30
4
TJ = 25°C
VGS = −2.0 V
0.25
0.20
VGS = −2.5 V
0.15
VGS = −3.0 V
0.10
VGS = −4.5 V
0.05
0
1
2
4
3
6
5
7
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
Figure 2. Transfer Characteristics
0.35
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
600
1.6
VGS = −4.5 V
ID = −2.2 A
C, CAPACITANCE (pF)
550
500
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
TJ = −55°C
1
Figure 1. On−Region Characteristics
0.40
1.4
TJ = 25°C
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.45
1.5
TJ = 125°C
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.50
0
1.5
8
1
VGS = −1.5 V
0
VDS = −5 V
9
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
8
10
TJ = 25°C
−2.8 V
−3.0 V
9
−ID, DRAIN CURRENT (A)
10
−25
0
25
50
75
100
125
150
TJ = 25°C
VGS = 0 V
f = 1 MHz
CISS
450
400
350
300
250
200
150
100
50
0
COSS
CRSS
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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4
20
NTGD3147F
TYPICAL PERFORMANCE CHARACTERISTICS
10
4
−VDS
3
QGS
−VGS
8
QDS
6
2
4
VDS = −10 V
ID = −2.2 A
TJ = 25°C
1
0
0
1
2
2
3
4
0
100
VGS = −4.5 V
VDD = −10 V
ID = −1.0 A
t, TIME (ns)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
12
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
tr
10
td(on)
1
1
10
QG, TOTAL GATE CHARGE (nC)
Figure 8. Resistive Switching Time
Variation versus Gate Resistance
1.2
10
VGS = 0 V
1.1
1.0
1
−VGS(th) (V)
−IS, SOURCE CURRENT (A)
100
RG, GATE RESISTANCE (W)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
TJ = 150°C
0.9
ID = −250 mA
0.8
0.7
0.6
125°C
0.1
0.4
0.5
0.6
25°C
−55°C
0.7
0.8
0.5
0.9
1.0
1.1
0.4
−50
1.2
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Diode Forward Voltage versus
Current
Figure 10. Threshold Voltage
150
10
−ID, DRAIN CURRENT (A)
30
20
10
0
0.001
−25
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
40
POWER (W)
td(off)
tf
0.01
0.1
1
10
100
1 ms
1
10 ms
0.01
1000
VGS = −12 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
SINGLE PULSE TIME (s)
1
dc
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Single Pulse Maximum Power
Dissipation
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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5
100
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
NTGD3147F
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 13. Thermal Response
10
100
IR, REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL SCHOTTKY CHARACTERISTICS
TJ = 125°C
1
75°C
0.1
25°C
0
−55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
TJ = 125°C
1
TJ = 75°C
0.1
0.001
0.9
TJ = 25°C
0.01
0
Figure 14. Typical Forward Voltage
5
10
15
VR, REVERSE VOLTAGE (V)
20
Figure 15. Typical Reverse Current
ORDERING INFORMATION
Device
NTGD3147FT1G
Package
Shipping†
TSOP−6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTGD3147F
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTGD3147F/D