ONSEMI NTGD4167CT1G

NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/−2.2 A,
TSOP−6 Dual
Features
•
•
•
•
•
•
Complementary N−Channel and P−Channel MOSFET
Small Size (3 x 3 mm) Dual TSOP−6 Package
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID MAX (Note 1)
N−Ch
30 V
90 mW @ 4.5 V
2.6 A
125 mW @ 2.5 V
2.2 A
170 mW @ −4.5 V
−1.9 A
300 mW @ −2.5 V
−1.0 A
P−Ch
−30 V
Applications
• DC−DC Conversion Circuits
• Load/Power Switching with Level Shift
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
(N−Ch & P−Ch)
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
t≤5s
TA = 25°C
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
t≤5s
TA = 25°C
Power Dissipation
(Note 1)
Steady State
TA = 25°C
Pulsed Drain
Current
Value
Unit
VDSS
30
V
VGS
±12
V
ID
2.6
1.9
A
PD
MARKING
DIAGRAM
1
W
0.9
IDM
8.6
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
±0.9
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
P−Ch
Operating Junction and Storage Temperature
P−CHANNEL MOSFET
A
−1.9
−1.4
1.1
tp = 10 ms
S2
S1
−2.2
t≤5s
N−Ch
G2
G1
N−CHANNEL MOSFET
2.9
ID
D2
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A
TSOP−6
CASE 318G
STYLE 13
−6.3
TA
M
G
TA MG
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
140
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
110
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
1
Publication Order Number:
NTGD4167C/D
NTGD4167C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
N
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
N
21.4
P
22.2
Max
Unit
OFF CHARACTERISTICS
VGS = 0 V
P
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
N
VGS = 0 V, VDS = 24 V
P
VGS = 0 V, VDS = −24 V
N
VGS = 0 V, VDS = 24 V
P
VGS = 0 V, VDS = −24 V
ID = 250 mA
30
ID = −250 mA
−30
V
mV/°C
1.0
TJ = 25 °C
mA
−1.0
10
TJ = 85 °C
−10
N
VDS = 0 V, VGS = ±12 V
±100
P
VDS = 0 V, VGS = ±12 V
±100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
N
VGS = VDS
P
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
ID = 250 mA
0.5
0.9
1.5
ID = −250 mA
−0.5
−1.1
−1.5
52
90
N
VGS = 4.5 V , ID = 2.6 A
VGS = 2.5 V , ID = 2.2 A
67
125
P
VGS = −4.5 V , ID = −1.9 A
130
170
VGS = −2.5 V, ID = −1.0 A
202
300
N
VDS = 15 V, ID = 2.6 A
2.6
P
VDS = −15 V , ID = −1.9 A
2.6
V
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
26
Total Gate Charge
QG(TOT)
3.7
Threshold Gate Charge
QG(TH)
0.6
Gate−to−Source Gate Charge
QGS
Gate−to−Drain “Miller” Charge
295
N
VDS = 15 V
27
f = 1 MHz, VGS = 0 V
P
N
48
VDS = −15 V
VGS = 4.5 V, VDS = 15 V, ID = 2.0 A
51
QGD
0.8
QG(TOT)
3.9
Threshold Gate Charge
QG(TH)
VGS = −4.5 V, VDS = −15 V, ID = −2.0 A
5.5
0.9
Total Gate Charge
P
pF
419
6.0
nC
0.6
Gate−to−Source Gate Charge
QGS
1.0
Gate−to−Drain “Miller” Charge
QGD
1.0
td(ON)
7.0
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
N
VGS = 4.5 V, VDD = 15 V,
ID = 1.0 A, RG = 6.0 W
td(OFF)
4.0
14
tf
2.0
td(ON)
8.0
tr
td(OFF)
VGS = −4.5 V, VDD = −15 V,
ID = −1.0 A, RG = 6.0 W
P
tf
8.0
22
8.0
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
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2
ns
NTGD4167C
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
IS = 0.9 A
0.7
1.2
V
IS = −0.9 A
−0.8
−1.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
N
P
Reverse Recovery Time
Charge Time
Discharge Time
VGS = 0 V, TJ = 25 °C
tRR
ta
tb
8.0
N
VGS = 0 V,
dIS / dt = 100 A/ms, IS = 0.9 A
ns
5.0
3.0
Reverse Recovery Charge
QRR
3.0
nC
Reverse Recovery Time
tRR
12
ns
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
P
VGS = 0 V,
dIS / dt = 100 A/ms, IS = −0.9 A
QRR
10
2.0
7.0
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3
nC
NTGD4167C
N−CHANNEL TYPICAL CHARACTERISTICS
VGS = 4.5 V
3.5 V
2.5 V
7.0
2.0 V
6.0
5.0
4.0
3.0
2.0
1.5 V
1.0
0
7.0
6.0
5.0
4.0
3.0
−55°C
2.0
125°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 25°C
0.12
ID = 2.6 A
0.10
0.08
0.06
0.04
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE VOLTAGE (V)
1.75
2
2.25
TJ = 25°C
0.09
0.08
VGS = 2.5 V
0.07
0.06
VGS = 4.5 V
0.05
0.04
0.03
0.02
0
1.0
2.0
3.0
4.0
5.0
6.0
400
ID = 2.6 A
VGS = 4.5 V
C, CAPACITANCE (pF)
350
1.3
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
8.0
9.0
150
TJ = 25°C
VGS = 0 V
f = 1 MHz
CISS
300
250
200
150
100
COSS
50
0.7
0
7.0
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
−25
2.5
0.10
Figure 3. On−Region vs. Gate−To−Source
Voltage
0.6
−50
1.5
Figure 2. Transfer Characteristics
0.14
1.4
1.25
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.16
1.5
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.18
0
1.0
0.0
0.75
Figure 1. On−Region Characteristics
0.02
RDS(on), DRAIN−TO−SOURCE RESISTANCE
25°C
1.0
0.20
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
VDS = 5 V
8.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
8.0
9.0
TJ = 25°C
ID, DRAIN CURRENT (A)
9.0
0
CRSS
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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4
30
16
QT
14
4
12
VDS
3
10
VGS
2
8
QGD
QGS
6
4
ID = 2.0 A
TJ = 25°C
VDS = 15 V
1
2
0
0
0
1
10
2
3
IS, SOURCE CURRENT (A)
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTGD4167C
TJ = 150°C
TJ = 25°C
0.1
0.3
4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 8. Diode Forward Voltage versus
Current
1.1
1.1
40
1.2
ID = 250 mA
30
1.0
POWER (W)
0.9
0.8
0.7
20
10
0.6
0.5
0.4
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
100
ID, DRAIN CURRENT (A)
VGS(th) (V)
1.0
10
VGS = 12 V
Single Pulse
TA = 25°C
100 ms
1 ms
1
10 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
1000
NTGD4167C
1
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
NORMALIZED
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
t, TIME (s)
Figure 12. FET Thermal Response
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6
10
100
1000
NTGD4167C
P−CHANNEL TYPICAL CHARACTERISTICS
7.0
7.0
VGS = −5.0 V to −3.5 V
−3.0 V
−ID, DRAIN CURRENT (A)
5.0
−2.5 V
4.0
3.0
2.0
−2.0 V
1.0
0
0
−1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 25°C
0.3
0.25
ID = −1.9 A
0.2
0.15
0.1
0.05
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
25°C
125°C
0
0.75
1
1.25
1.5
−55°C
1.75
2
2.25
2.5
2.75
TJ = 25°C
0.45
0.4
0.35
VGS = −2.5 V
0.3
0.25
0.2
VGS = −4.5 V
0.15
0.1
0.05
0
0
1.0
2.0
3.0
4.0
5.0
6.0
−ID, DRAIN CURRENT (A)
Figure 15. On−Region vs. Gate−To−Source
Voltage
Figure 16. On−Resistance vs. Drain Current
and Temperature
1.6
550
CISS
450
1.3
1.2
1.1
1.0
0.9
0.8
0.7
400
350
300
250
200
150
100
0
25
50
75
100
125
150
0
COSS
CRSS
50
−25
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 17. On−Resistance Variation with
Temperature
Figure 18. Capacitance Variation
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7
7.0
TJ = 25°C
VGS = 0 V
f = 1 MHz
500
ID = −1.9 A
VGS = −4.5 V
3
0.5
−VGS, GATE VOLTAGE (V)
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
2.0
Figure 14. Transfer Characteristics
0.4
0.6
−50
3.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.35
1.4
4.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.45
1.5
5.0
Figure 13. On−Region Characteristics
0.5
0
1.5
VDS = −5 V
6.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
6.0
30
NTGD4167C
16
QT
14
4
12
−VGS
−VDS
10
3
QGS
8
QGD
2
6
ID = −2.0 A
TJ = 25°C
VDS = −15 V
1
0
0
1
2
4
2
0
4
3
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
5
QG, TOTAL GATE CHARGE (nC)
Figure 19. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1.4
10
ID = −250 mA
TJ = 150°C
1.2
1.1
−VGS(th) (V)
−IS, SOURCE CURRENT (A)
1.3
TJ = 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.4
−50
1.2
0
25
50
75
100
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Threshold Voltage
100
−ID, DRAIN CURRENT (A)
30
20
10
0
0.001
−25
Figure 20. Diode Forward Voltage versus
Current
40
POWER (W)
1.0
0.01
0.1
1
10
100
10
VGS = −12 V
Single Pulse
TA = 25°C
1
1 ms
10 ms
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
dc
10
SINGLE PULSE TIME (s)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 22. Single Pulse Maximum Power
Dissipation
Figure 23. Maximum Rated Forward Biased
Safe Operating Area
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8
150
100 ms
0.01
0.1
1000
125
100
NTGD4167C
1
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
NORMALIZED
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 24. FET Thermal Response
ORDERING INFORMATION
Device
NTGD4167CT1G
Package
Shipping†
TSOP6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
NTGD4167C
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 13:
PIN 1. GATE 1
2. SOURCE 2
3. GATE 2
4. DRAIN 2
5. SOURCE 1
6. DRAIN 1
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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10
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For additional information, please contact your local
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NTGD4167C/D