NTGD3149C Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device Applications • DC−DC Conversion Circuits • Load/Power Switching with Level Shift http://onsemi.com V(BR)DSS RDS(on) MAX N−Ch 20 V 60 mW @ 4.5 V P−Ch −20 V 110 mW @ 4.5 V Drain−to−Source Voltage Gate−to−Source Voltage (N−Ch & P−Ch) N−Channel Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s TA = 25°C P−Channel Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C Pulsed Drain Current Value Unit VDSS 20 V VGS ±8 V ID 3.2 2.3 A N−Ch IDM P−Ch Operating Junction and Storage Temperature D2 S1 P−CHANNEL MOSFET A 2.4 1.7 W 0.9 1.1 tp = 10 ms G2 G1 MARKING DIAGRAM 2.7 t≤5s S2 N−CHANNEL MOSFET 3.5 PD −2.7 A 145 mW @ 2.5 V D1 Symbol ID 3.5 A 90 mW @ 2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX (Note 1) A 11 1 TSOP−6 CASE 318G STYLE 13 CC MG G 1 8.0 TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 0.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C CC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 140 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 110 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 0 1 Publication Order Number: NTGD3149C/D NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS N Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ N 1.1 P 1.1 Max Unit OFF CHARACTERISTICS VGS = 0 V P Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V ID = 250 mA 20 ID = −250 mA −20 V mV/°C 1.0 TJ = 25 °C mA −1.0 10 TJ = 85 °C −10 N VDS = 0 V, VGS = ±8 V ±100 P VDS = 0 V, VGS = ±8 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) N VGS = VDS P Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS ID = 250 mA 0.4 1.0 ID = −250 mA −0.4 −1.0 N VGS = 4.5 V , ID = 3.5 A 41 60 P VGS = −4.5 V , ID = −2.7 A 83 110 N VGS = 2.5 V , ID = 2.9 A 51 90 P VGS = −2.5 V , ID = −2.4 A 104 145 N VGS = 1.8 V , ID = 2.2 A 67 150 P VGS = −1.8 V , ID = −1.9 A 143 220 N VDS = 10 V , ID = 3.5 A 4.7 P VDS = −10 V , ID = −2.7 A 5.1 V mW S CHARGES AND CAPACITANCES Input Capacitance CISS 387 Output Capacitance COSS Reverse Transfer Capacitance CRSS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 40 Total Gate Charge QG(TOT) 4.6 Threshold Gate Charge QG(TH) 0.3 N VDS = 10 V 43 f = 1 MHz, VGS = 0 V P N 73 VDS = −10 V VGS = 4.5 V, VDS = 10 V, ID = 2.0 A RG = 6 W 76 Gate−to−Source Gate Charge QGS Gate−to−Drain “Miller” Charge QGD 1.2 Total Gate Charge QG(TOT) 5.2 Threshold Gate Charge QG(TH) Gate−to−Source Gate Charge QGS Gate−to−Drain “Miller” Charge QGD P VGS = −4.5 V, VDS = −10 V, ID = −1.0 A RG = 6 W 2 5.5 0.7 0.4 1.0 1.2 http://onsemi.com pF 509 5.5 nC NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time td(ON) tr Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time N 3.8 VGS = 4.5 V, VDD = 10 V, ID = 1.0 A, RG = 6.0 W td(OFF) 16.4 tf 2.4 td(ON) 7.0 tr td(OFF) ns 6.5 5.3 VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W P 33.3 tf 29.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P Reverse Recovery Time VGS = 0 V, TJ = 25 °C IS = 0.8 A 0.7 1.2 IS = −0.8 A −0.7 −1.2 tRR 7.7 Charge Time ta 4.5 Discharge Time tb N VGS = 0 V, dIS / dt = 100 A/ms V ns 3.2 Reverse Recovery Charge QRR 1.9 nC Reverse Recovery Time tRR 11.4 ns Charge Time ta Discharge Time tb Reverse Recovery Charge P VGS = 0 V, dIS / dt = 100 A/ms QRR 7.5 3.9 4.7 nC 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTGD3149CT1G Package Shipping† TSOP6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD3149C TYPICAL CHARACTERISTICS (N−CHANNEL) 5.0 VDS ≥ 10 V 2.0 V 1.6 V 1.8 V 4.0 3.0 1.4 V 2.0 1.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VGS = 1.2 V 0 0.5 1.0 1.5 2.0 2.5 3.0 4.0 3.0 TJ = 125°C 2.0 TJ = 25°C 1.0 TJ = −55°C 0 1.0 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. Nch On−Region Characteristics Figure 2. Nch Transfer Characteristics ID = 3.5 A T = 25°C 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.08 0.07 TJ = 25°C 0.06 VGS = 2.5 V 0.05 0.04 VGS = 4.5 V 0.03 0.02 0.01 0 1.0 2.0 3.0 4.0 5.0 6.0 ID, DRAIN CURRENT (A) Figure 3. Nch On−Resistance vs. Gate Voltage Figure 4. Nch On−Resistance vs. Drain Current and Gate Voltage 10,000 1.5 VGS = 0 V ID = 3.5 A VGS = 4.5 V 1.4 TJ = 150°C 1.3 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.38 0.02 5.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 2.2 V 6.0 2.5 V ID, DRAIN CURRENT (A) 4.5 V 6.0 1.2 1.1 1.0 0.9 1000 TJ = 125°C 100 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 2.0 TJ, JUNCTION TEMPERATURE (°C) 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Nch On−Resistance Variation with Temperature Figure 6. Nch Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 18 NTGD3149C 600 550 VGS = 0 V TJ = 25°C 500 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (N−CHANNEL) 450 400 Ciss 350 300 250 200 150 100 50 0 Coss Crss 0 2.0 4.0 6.0 8.0 10 12 14 18 16 20 3.5 3.0 2.5 2.0 Q1 1.5 Q2 1.0 ID = 3.5 A TJ = 25°C 0.5 0 0 1.0 2.0 3.0 4.0 5.0 QG, TOTAL GATE CHARGE (nC) Figure 7. Nch Capacitance Variation Figure 8. Nch Gate−to−Source Voltage vs. Total Charge 3.5 10 IS, SOURCE CURRENT (A) VDD = 10 V ID = 3.5 A VGS = 4.5 V t, TIME (ns) QT 4.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 td(off) td(on) tr 1.0 4.5 tf 1.0 10 2.5 2.0 1.5 1.0 0.5 0 100 VGS = 0 V TJ = 25°C 3.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Nch Resistive Switching Time Variation vs. Gate Resistance Figure 10. Nch Diode Forward Voltage vs. Current http://onsemi.com 5 0.9 NTGD3149C TYPICAL CHARACTERISTICS (P−CHANNEL) TJ = 25°C VDS ≥ −10 V −ID, DRAIN CURRENT (A) −1.8 V 4.0 −1.6 V 3.0 2.0 −1.4 V 1.0 −1.2 V VGS = −1.0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 4.0 3.0 TJ = −55°C 2.0 TJ = 25°C 1.0 TJ = 125°C 0 1.0 1.5 2.0 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. Pch On−Region Characteristics Figure 12. Pch Transfer Characteristics ID = −2.7 A T = 25°C 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 1.0 2.0 3.0 4.0 5.0 6.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.14 0.12 TJ = 25°C VGS = −2.5 V 0.10 VGS = −4.5 V 0.08 0.06 0.04 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 −ID, DRAIN CURRENT (A) Figure 13. Pch On−Resistance vs. Gate Voltage Figure 14. Pch On−Resistance vs. Drain Current and Gate Voltage 10,000 1.5 VGS = 0 V ID = −2.7 A VGS = −4.5 V 1.4 1.3 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.38 0.02 5.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 6.0 −2.0 V −3.0 V 5.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −2.5 V −4.5 V 6.0 1.2 1.1 1.0 0.9 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 2.0 TJ, JUNCTION TEMPERATURE (°C) 4.0 6.0 8.0 10 12 14 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. Pch On−Resistance Variation with Temperature Figure 16. Pch Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 18 NTGD3149C 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 −VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS (P−CHANNEL) VGS = 0 V TJ = 25°C Ciss Coss Crss 0 2.0 4.0 6.0 8.0 12 10 3.5 3.0 2.5 2.0 Q1 1.5 Q2 ID = 2.7 A TJ = 25°C 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 QG, TOTAL GATE CHARGE (nC) Figure 17. Pch Capacitance Variation Figure 18. Pch Gate−to−Source Voltage vs. Total Charge 3.5 100 IS, SOURCE CURRENT (A) VDD = −10 V ID = −1 A VGS = −4.5 V t, TIME (ns) QT 4.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 td(off) tf tr td(on) 10 1.0 4.5 1.0 10 2.5 2.0 1.5 1.0 0.5 0 100 VGS = 0 V TJ = 25°C 3.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 19. Pch Resistive Switching Time Variation vs. Gate Resistance Figure 20. Pch Diode Forward Voltage vs. Current http://onsemi.com 7 0.9 NTGD3149C PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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