Si5461EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V 1206-8 ChipFET ® S 1 D D D D G 5.4 kΩ D D G S Marking Code LA Bottom View XX Lot Traceability and Date Code Part # Code D Ordering Information: Si5461EDC-T1-E3 (Lead (Pb)-free) Si5461EDC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 85 °C Continuous Source Currenta IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD - 4.5 - 4.5 - 3.2 - 20 - 2.1 - 1.1 2.5 1.3 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.2 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) ID Unit - 55 to 150 c, d A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. When using HBM. The MM rating is 300 V. c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71413 S09-0129-Rev. D, 02-Feb-09 www.vishay.com 1 Si5461EDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.45 IGSS VDS = 0 V, VGS = ± 4.5 V Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea -1 VDS = - 16 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V µA - 20 A VGS = - 4.5 V, ID = - 5.0 A 0.037 0.045 VGS = - 2.5 V, ID = - 4.0 A 0.050 0.060 VGS = - 1.8 V, ID = - 2 A 0.066 0.082 gfs VDS = - 5 V, ID = - 5.0 A 12 VSD IS = - 1.1 A, VGS = 0 V - 0.7 - 1.2 12.5 20 Forward Transconductancea Diode Forward Voltage ± 1.5 VDS = - 16 V, VGS = 0 V RDS(on) a V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.0 Turn-On Delay Time td(on) 2.5 3.5 4.5 8.0 27 40 15 25 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.0 A VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC 2.0 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 4.5 thru 2.5 V TC = - 55°C 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 V 25 °C 125 °C 12 8 4 4 0.5 V 1V 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71413 S09-0129-Rev. D, 02-Feb-09 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3000 2500 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.15 0.09 VGS = 1.8 V VGS = 2.5 V 0.06 VGS = 4.5 V Ciss 2000 1500 1000 Coss 0.03 500 Crss 0 0.00 0 4 8 12 16 0 20 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 12 VDS = 10 V ID = 5.0 A VGS = 4.5 V ID = 5.0 A 10 8 6 4 (Normalized) 1.4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 1.2 1.0 0.8 2 0.6 - 50 0 0 5 10 15 20 25 30 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.30 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.20 ID = 5.0 A 0.15 0.10 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71413 S09-0129-Rev. D, 02-Feb-09 1.2 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10 -2 10-1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 1000 10 000 1000 800 100 10 600 I GSS (A) IGSS (A) TA = 25 °C 400 150 °C 1 25 °C 0.1 0.01 200 0.001 0 0 2 4 6 8 10 12 0.0001 0.10 1 10 100 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71413 S09-0129-Rev. D, 02-Feb-09 Si5461EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71413. Document Number: 71413 S09-0129-Rev. 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