Si5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.062 at VGS = - 4.5 V - 5.1 0.068 at VGS = - 3.6 V - 4.9 0.085 at VGS = - 2.5 V - 4.4 0.120 at VGS = - 1.8 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V 1206-8 ChipFET ® S 1 D D D D D D G Marking Code G LB 5.4 kΩ XX Lot Traceability and Date Code S Part # Code Bottom View D Ordering Information: Si5463EDC-T1-E3 (Lead (Pb)-free) Si5463EDC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 85 °C Continuous Source Currenta IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD - 3.8 - 3.7 - 2.7 - 15 - 1.9 - 1.0 2.3 1.25 1.2 0.65 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.1 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) ID - 55 to 150 c, d Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 45 55 84 100 20 25 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. When using HBM. The MM rating is 300 V. c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71364 S09-0129-Rev. D, 02-Feb-09 www.vishay.com 1 Si5463EDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea a Forward Transconductance Diode Forward Voltage a VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) V ± 1.5 µA - 15 A VGS = - 4.5 V, ID = - 4.0 A 0.051 0.062 VGS = - 3.6 V, ID = - 3.5 A 0.056 0.068 VGS = - 2.5 V, ID = - 3.0 A 0.070 0.085 0.120 VGS = - 1.8 V, ID = - 1.5 A 0.100 gfs VDS = - 5 V, ID = - 4.0 A 10 VSD IS = - 1.0 A, VGS = 0 V - 0.75 - 1.2 9.7 15 VDS = - 10 V, VGS = - 4.5 V, ID = - 4.0 A 2.7 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 1.4 Turn-On Delay Time td(on) 1.85 2.5 3.2 4.5 1.9 2.5 3.2 4.5 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 2.5 V TC = - 55 °C VGS = 4.5 thru 3 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 9 2V 6 3 25 °C 125 °C 9 6 3 1.5 V 1 V, 0.5 V 0 0 www.vishay.com 2 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 Document Number: 71364 S09-0129-Rev. D, 02-Feb-09 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2000 0.20 1500 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.25 VGS = 1.8 V 0.15 0.10 VGS = 2.5 V VGS = 3.6 V Ciss 1000 Coss 500 0.05 VGS = 4.5 V Crss 0 0.00 0 3 6 9 12 0 15 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 12 1.6 VGS = 4.5 V ID = 4.0 A VDS = 10 V ID = 4.0 A 6 3 (Normalized) 1.4 9 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 0.6 - 50 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.20 20 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.0 0.15 ID = 4.0 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71364 S09-0129-Rev. D, 02-Feb-09 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.3 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10 -2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1000 100 600 10 20 10 000 1000 800 100 I GSS (µA) I GSS (µA) TA = 25 °C 600 400 10 150 °C 1 0.1 25 °C 0.01 200 0.001 0 0 2 4 6 8 10 12 0.0001 0.10 VGS - Gate-to-Source Voltage (V) 1 VGS - Gate-to-Source Voltage (V) Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71364 S09-0129-Rev. D, 02-Feb-09 Si5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71364. Document Number: 71364 S09-0129-Rev. 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