TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 12 MHz Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8389 DESCRIPTION TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 70 ± 22 890 30 TSHF6410 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHF6410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C °C Operating temperature range Tamb - 40 to + 85 Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81832 Rev. 1.2, 25-Jun-09 For technical questions, contact: [email protected] www.vishay.com 1 TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. TYP. MAX. VF 1.4 1.6 VF 2.3 IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 70 V V mV/K 10 µA 135 mW/sr 125 45 UNIT pF IF = 1 A, tp = 100 µs Ie 700 mW/sr IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 22 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 890 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz d 2.1 mm Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81832 Rev. 1.2, 25-Jun-09 TSHF6410 High Speed Infrared Emitting Diode, Vishay Semiconductors 890 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Radiant Power (mW) 0.02 IF - Forward Current (mA) 1000 Tamb < 50 °C tP/T = 0.01 1000 0.05 0.1 10 0.5 0.1 100 0.01 0.1 1 10 10 100 Fig. 6 - Radiant Power vs. Forward Current 1.25 Φe rel - Relative Radiant Power 1000 100 tP = 100 µs tP/T = 0.001 10 1.0 0.75 0.5 0.25 0 800 1 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 10° 20° 30° 1000 100 10 1 0.1 1 1000 900 λ - Wavelength (nm) 20082 10 100 IF - Forward Current (mA) 1000 Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81832 Rev. 1.2, 25-Jun-09 40° 1.0 0.9 50° 0.8 60° 70° 0.7 94 8883 ϕ - Angular Displacement 0 18220 1000 IF - Forward Current (mA) 16971 tP - Pulse Duration (ms) 16031 1 100 Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 1 e- 0.2 100 80° 0.6 0.4 0.2 0 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81832 Rev. 1.2, 25-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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