SUM50N03-13LC Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 50a 0.017 at VGS = 4.5 V 48a • TrenchFET® Power MOSFET Plus Current Sensing Diode • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS • Industrial D2PAK-5 D (Tab, 3) 1 2 3 4 5 (1) (4) G KELVIN (2) SENSE G D S SENSE S (5) KELVIN N-Channel MOSFET Ordering Information: SUM50N03-13LC-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range ID Unit V 50a 32a IDM 100 IAR 25 EAR 31 A mJ c PD 83 2.7d W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountd Junction-to-Case RthJA 55 RthJC 1.8 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71804 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM50N03-13LC Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, IDS = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = 30 V, VGS = 0 V, TJ = 175 °C 150 ID(on) Drain-Source On-State Resistancea VDS = 5 V, VGS = 10 V rDS(on) 50 0.010 0.013 VGS = 10 V, ID = 25 A, TJ = 125 °C 0.016 0.021 VGS = 10 V, ID = 25 A, TJ = 175 °C 0.018 0.024 0.014 0.017 Forward Transconductance gfs VDS = 15 V, ID = 25 A V nA µA A VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 24 A a 3 30 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 1960 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 380 180 35 Gate-Source Charge Gate-Drain Chargec Qgd 5.6 Turn-On Delay Timec td(on) 10 20 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = 15 V, VGS = 20 V, ID = 50 A 50 Qgs VDD = 15 V, RL = 0.3 Ω ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 nC 7.6 93 180 30 60 10 20 °Cb IS 50 Pulsed Current ISM 100 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 50 A, VGS = 0 V trr IRM(REC) ns IF = 50 A, di/dt = 100 A/µs Qrr A 1.3 1.6 V 35 70 ns 1.5 A 0.026 µC Current Sense Characteristics Current Sensing Ratio Mirror Active Resistance r ID = 1 A, VGSS = 10 V, RSENSE = 1.1 Ω rm(on) VGS = 10 V, ID = 10 mA 420 520 3.5 620 Ω Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71804 S-80274-Rev. B, 11-Feb-08 SUM50N03-13LC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 TC = - 55 °C VGS = 10 thru 5 V 25 °C 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 4V 40 20 60 125 °C 40 20 3V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.06 80 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 0.05 60 25 °C 125 °C 40 20 0.04 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0.00 0 0 20 40 60 80 0 100 20 40 VGS - Gate-to-Source Voltage (V) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 10 VGS - Gate-to-Source Voltage (V) 2500 Ciss C - Capacitance (pF) 60 2000 1500 1000 Coss 500 VGS = 15 V ID = 50 A 8 6 4 2 Crss 0 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71804 S-80274-Rev. B, 11-Feb-08 30 0 5 10 15 20 25 30 35 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM50N03-13LC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 25 A I S - Source Current (A) 1.6 (Normalized) r DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 175 °C TJ = 25 °C 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 TJ - Junction Temperature (°C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 60 200 50 100 I D - Drain Current (A) I D - Drain Current (A) THERMAL RATINGS 40 30 20 Limited by rDS(on)* 0.0001 s 10 0.001 s TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 150 175 1 0.1 TC - Case Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 0.01 s 0.1 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 3 Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 4 Document Number: 71804 S-80274-Rev. B, 11-Feb-08 SUM50N03-13LC Vishay Siliconix 10 10 8 8 6 r DS(on) - On-Resistance (Ω) r DS(on) - On-Resistance (Ω) SENSE DIE TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 4.5 V VGS = 10 V 4 ID = 10 mA 6 4 2 2 0 0.00 0 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) ISENSE (A) On-Resistance vs. Sense Current On-Resistance vs. Gate-Source Voltage 1200 RS 1000 RS Ratio 800 RS 600 RS 400 G RS VG SENSE S KELVIN 200 RS 0 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Current Ratio (I(MAIN)/IS) vs. Gate-Source Voltage (Figure 1) Figure 1. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71804 Document Number: 71804 S-80274-Rev. 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