SUM50N03-13LC Datasheet

SUM50N03-13LC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Sense Terminal
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (Ω)
ID (A)
0.013 at VGS = 10 V
50a
0.017 at VGS = 4.5 V
48a
• TrenchFET® Power MOSFET Plus
Current Sensing Diode
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
APPLICATIONS
• Industrial
D2PAK-5
D (Tab, 3)
1 2 3 4 5
(1)
(4)
G
KELVIN
(2)
SENSE
G
D
S
SENSE
S (5)
KELVIN
N-Channel MOSFET
Ordering Information: SUM50N03-13LC-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
ID
Unit
V
50a
32a
IDM
100
IAR
25
EAR
31
A
mJ
c
PD
83
2.7d
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB
Mountd
Junction-to-Case
RthJA
55
RthJC
1.8
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
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1
SUM50N03-13LC
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VGS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, IDS = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 125 °C
50
VDS = 30 V, VGS = 0 V, TJ = 175 °C
150
ID(on)
Drain-Source On-State Resistancea
VDS = 5 V, VGS = 10 V
rDS(on)
50
0.010
0.013
VGS = 10 V, ID = 25 A, TJ = 125 °C
0.016
0.021
VGS = 10 V, ID = 25 A, TJ = 175 °C
0.018
0.024
0.014
0.017
Forward Transconductance
gfs
VDS = 15 V, ID = 25 A
V
nA
µA
A
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 24 A
a
3
30
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
1960
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
380
180
35
Gate-Source Charge
Gate-Drain Chargec
Qgd
5.6
Turn-On Delay Timec
td(on)
10
20
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDS = 15 V, VGS = 20 V, ID = 50 A
50
Qgs
VDD = 15 V, RL = 0.3 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
nC
7.6
93
180
30
60
10
20
°Cb
IS
50
Pulsed Current
ISM
100
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 50 A, VGS = 0 V
trr
IRM(REC)
ns
IF = 50 A, di/dt = 100 A/µs
Qrr
A
1.3
1.6
V
35
70
ns
1.5
A
0.026
µC
Current Sense Characteristics
Current Sensing Ratio
Mirror Active Resistance
r
ID = 1 A, VGSS = 10 V, RSENSE = 1.1 Ω
rm(on)
VGS = 10 V, ID = 10 mA
420
520
3.5
620
Ω
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71804
S-80274-Rev. B, 11-Feb-08
SUM50N03-13LC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
TC = - 55 °C
VGS = 10 thru 5 V
25 °C
80
I D - Drain Current (A)
I D - Drain Current (A)
80
60
4V
40
20
60
125 °C
40
20
3V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
0.06
80
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
0.05
60
25 °C
125 °C
40
20
0.04
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0.00
0
0
20
40
60
80
0
100
20
40
VGS - Gate-to-Source Voltage (V)
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
3000
10
VGS - Gate-to-Source Voltage (V)
2500
Ciss
C - Capacitance (pF)
60
2000
1500
1000
Coss
500
VGS = 15 V
ID = 50 A
8
6
4
2
Crss
0
0
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
30
0
5
10
15
20
25
30
35
Qg - Total Gate Charge (nC)
Gate Charge
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SUM50N03-13LC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 25 A
I S - Source Current (A)
1.6
(Normalized)
r DS(on) - On-Resistance
1.8
1.4
1.2
1.0
TJ = 175 °C
TJ = 25 °C
10
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
1
175
0.3
0
TJ - Junction Temperature (°C)
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
60
200
50
100
I D - Drain Current (A)
I D - Drain Current (A)
THERMAL RATINGS
40
30
20
Limited
by rDS(on)*
0.0001 s
10
0.001 s
TC = 25 °C
Single Pulse
10
0
0
25
50
75
100
125
150
175
1
0.1
TC - Case Temperature (°C)
* VGS
Maximum Drain Current
vs. Case Temperature
0.01 s
0.1 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-5
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
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Document Number: 71804
S-80274-Rev. B, 11-Feb-08
SUM50N03-13LC
Vishay Siliconix
10
10
8
8
6
r DS(on) - On-Resistance (Ω)
r DS(on) - On-Resistance (Ω)
SENSE DIE TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 4.5 V
VGS = 10 V
4
ID = 10 mA
6
4
2
2
0
0.00
0
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
ISENSE (A)
On-Resistance vs. Sense Current
On-Resistance vs. Gate-Source Voltage
1200
RS
1000
RS
Ratio
800
RS
600
RS
400
G
RS
VG
SENSE
S
KELVIN
200
RS
0
0
4
8
12
16
20
VGS - Gate-to-Source Voltage (V)
Current Ratio (I(MAIN)/IS)
vs. Gate-Source Voltage (Figure 1)
Figure 1.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71804
Document Number: 71804
S-80274-Rev. B, 11-Feb-08
www.vishay.com
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Revision: 02-Oct-12
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Document Number: 91000