SUB50N03-20C Vishay Siliconix Current Sensing MOSFET, N-Channel 30-V (D-S) PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 50a 0.02 @ VGS = 4.5 V 48a D (Tab, 3) D2PAK-5 (1) (4) G 1 2 3 4 5 KELVIN (2) SENSE S (5) G D N-Channel MOSFET S SENSE ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_C Operating Junction and Storage Temperature Range ID Unit V 50a 32a IDM 100 IAR 25 EAR 31 A mJ 83c PD 2.7d W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mountd RthJA 55 RthJC 1.8 _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71175 S-02575—Rev. C, 27-Nov-00 www.vishay.com 1 SUB50N03-20C Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) VDS = 30 V, VGS = 0 V, TJ = 125_C 50 VDS = 30 V, VGS = 0 V, TJ = 175_C 150 VDS = 5 V, VGS = 10 V 50 gfs VGS = 10 V, ID = 25 A 0.012 0.015 0.019 0.024 VGS = 10 V, ID = 25 A, TJ = 175_C 0.022 0.027 0.016 0.02 VDS = 15 V, ID = 25 A V nA mA m A VGS = 10 V, ID = 25 A, TJ = 125_C VGS = 4.5 V, ID = 24 A Forward Transconductancea 3 30 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 180 Total Gate Chargec Qg 35 Gate-Source Chargec Qgs 1960 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 380 50 7.6 VDS = 15 V, VGS = 20 V, ID = 50 A nC Gate-Drain Chargec Qgd 5.6 Turn-On Delay Timec td(on) 10 20 Rise Timec Turn-Off Delay Timec Fall Timec tr VDD = 15 V, RL = 0.3 W 93 180 td(off) ID ] 50 A, VGEN = 10 V, RG = 2.5 W 30 60 10 20 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 50 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 50 A, VGS = 0 V 1.3 1.6 V 35 70 ns IF = 50 A, di/dt = 100 A/ms m 1.5 A 0.026 mC trr IRM(REC) Qrr Current Sense Characteristics Current Sensing Ratio Mirror Active Resistance r ID = 1 A, VGSS = 10 V, RSENSE = 2.2 W rm(on) VGS = 10 V, ID = 10 mA 420 520 3.5 620 W Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature. www.vishay.com 2 Document Number: 71175 S-02575—Rev. C, 27-Nov-00 SUB50N03-20C Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 TC = –55_C VGS = 10 thru 5 V 25_C 80 I D – Drain Current (A) I D – Drain Current (A) 80 4V 60 40 20 3V 125_C 60 40 20 2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 60 r DS(on) – On-Resistance ( W ) g fs – Transconductance (S) TC = –55_C 25_C 125_C 40 20 0 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0.00 0 20 40 60 80 100 0 20 40 VGS – Gate-to-Source Voltage (V) 80 100 ID – Drain Current (A) Capacitance Gate Charge 3000 10 V GS – Gate-to-Source Voltage (V) 2500 Ciss C – Capacitance (pF) 60 2000 1500 1000 Coss 500 Crss 0 0 VGS = 15 V ID = 50 A 8 6 4 2 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71175 S-02575—Rev. C, 27-Nov-00 30 0 5 10 15 20 25 30 35 Qg – Total Gate Charge (nC) www.vishay.com 3 SUB50N03-20C Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 VGS = 10 V ID = 25 A I S – Source Current (A) r DS(on) – On-Resistance ( W) (Normalized) 1.8 1.6 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (_C) THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 200 60 100 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 20 Limited by rDS(on) 0.0001 s 10 0.001 s TC = 25_C Single Pulse 10 0.01 s 0.1 s dc 0 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71175 S-02575—Rev. C, 27-Nov-00 SUB50N03-20C Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SENSE DIE On-Resistance vs. Gate-Source Voltage 10 8 8 r DS(on) – On-Resistance ( W) r DS(on) – On-Resistance ( W) On-Resistance vs. Sense Current 10 VGS = 4.5 V 6 VGS = 10 V 4 2 0 0.00 ID = 10 mA 6 4 2 0 0.02 0.04 0.06 0.08 0.10 0 2 ISENSE (A) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Current Ratio (I(MAIN)/IS) vs. Gate-Source Voltage (Figure 1) 1000 RS = 6.6 W 800 RS = 4.7 W 600 G Ratio RS = 2.2 W VG RS = 1.1 W 400 SENSE S KELVIN RS 200 0 0 2 4 6 8 10 12 14 16 Figure 1 VGS – Gate-to-Source Voltage (V) Document Number: 71175 S-02575—Rev. C, 27-Nov-00 www.vishay.com 5