MBR10Hxx, MBRF10Hxx, MBRB10Hxx Datasheet

MBR10Hxx, MBRF10Hxx, MBRB10Hxx
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Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
FEATURES
ITO-220AC
2
2
1
1
MBR10Hxx
MBRF10Hxx
PIN 1
PIN 1
CASE
PIN 2
PIN 2
TO-263AB
K
2
PIN 1
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
1
MBRB10Hxx
PIN 2
•
•
•
•
•
•
•
•
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
100 μA
TJ max.
175 °C
Package
TO-220AC, ITO-220AC, TO-263AB
Diode variations
Single
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H35
MBR10H45
MBR10H50
MBR10H60
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
UNIT
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current (fig. 1)
IF(AV)
10
A
Non-repetitive avalanche energy 
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
Peak repetitive reverse current at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
Peak non-repetitive reverse energy 
(8/20 μs waveform)
ERSM
20
10
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Revision: 09-Aug-13
VC
V
A
mJ
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Document Number: 88780
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
VF (1)
TEST CONDITIONS
MBR15H50CT
MBR15H60CT
TYP.
TYP.
MAX.
MAX.
UNIT
IF = 10 A
TJ = 25 °C
-
0.63
-
0.71
IF = 10 A
TJ = 125 °C
0.49
0.55
0.57
0.61
IF = 20 A
TJ = 25 °C
-
0.75
-
0.85
IF = 20 A
TJ = 125 °C
0.62
0.68
0.68
0.71
TJ = 25 °C
-
100
-
100
μA
TJ = 125 °C
4.0
12
2.0
12
mA
IR (2)
Maximum reverse current
MBR15H35CT
MBR15H45CT
Rated VR
V
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
2.0
4.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AC
MBR10H45-E3/45
PREFERRED P/N
1.80
45
50/tube
DELIVERY MODE
Tube
ITO-220AC
MBRF10H45-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB10H45-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB10H45-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR10H45HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF10H45HE3/45 (1)
1.94
45
50/tube
Tube
TO-263AB
MBRB10H45HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
MBRB10H45HE3/81 (1)
1.33
81
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 09-Aug-13
Document Number: 88780
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
15
MBR, MBRB
10
MBRF
5
TJ = 150 °C
1
TJ = 125 °C
0.1
MBR10H35
MBR10H35,-MBR10H45
MBR10H45
MBR10H50
MBR10H50,-MBR10H60
MBR10H60
0.01
0.001
TJ = 25 °C
0.0001
0
0
25
50
75
100
125
150
0
175
20
40
60
80
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
175
150
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
MBR10H35, MBR10H45
MBR10H50, MBR10H60
1000
100
1
10
100
0
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
10
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR10H35, MBR10H45
MBR10H50, MBR10H60
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
100
10 000
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
Peak Forward Surge Current (A)
10
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Aug-13
Document Number: 88780
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
PIN
1
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.035 (0.89)
0.025 (0.64)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 09-Aug-13
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
7° REF.
0.191 (4.85)
0.171 (4.35)
CASE
0.037 (0.94)
0.027 (0.68)
7° REF.
2
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
PIN 1
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.105 (2.67)
0.095 (2.41)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
1.148 (29.16)
1.118 (28.40)
2
7° REF.
0.076 (1.93) REF.
45° REF.
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 88780
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000