MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT Datasheet

MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
• Power pack
ITO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
2
3
1
1
MBR15HxxCT
PIN 1
PIN 2
PIN 3
CASE
2
MBRF15HxxCT
PIN 1
PIN 2
PIN 3
TO-263AB
K
1
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 7.5 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
50 μA
TJ max.
175 °C
Package
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
Revision: 12-Jun-13
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
MBRB15HxxCT
PIN 2
• High forward surge capability
• AEC-Q101 qualified
2
PIN 1
3
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Document Number: 88782
1
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MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
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Vishay General Semiconductor
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified
current (fig. 1)
total device
per diode
A
7.5
Non-repetitive avalanche energy
at 25 °C, IAS = 4 A, L = 10 mH per diode
EAS
80
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
20
10
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 k
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
15
IF(AV)
UNIT
mJ
A
mJ
VC
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to +175
°C
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward
voltage per diode
Maximum reverse current per diode
VF (1)
IR (2)
TEST CONDITIONS
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT
TYP.
MAX.
TYP.
MAX.
UNIT
IF = 7.5 A
TJ = 25 °C
-
0.63
-
0.73
IF = 7.5 A
TJ = 125 °C
0.50
0.55
0.58
0.61
IF = 15 A
TJ = 25 °C
-
0.75
-
0.87
IF = 15 A
TJ = 125 °C
0.61
0.66
0.68
0.72
TJ = 25 °C
-
50
-
50
μA
TJ = 125 °C
3.0
10
2.0
10
mA
Rated VR
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
3.0
5.0
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR15H45CT-E3/45
PREFERRED P/N
1.85
45
50/tube
Tube
ITO-220AB
MBRF15H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB15H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB15H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR15H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF15H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB15H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB15H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 12-Jun-13
Document Number: 88782
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
MBR, MBRB
15
MBRF
10
5
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
20
TJ = 125 °C
0.1
0.01
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
0.001
TJ = 25 °C
0.0001
0
0
25
50
75
100
125
150
0
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
175
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
1
125
100
75
50
100
10
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
25
1
10
1
0.1
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 12-Jun-13
Document Number: 88782
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.191 (4.85)
0.171 (4.35)
0.035 (0.89)
0.025 (0.64)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 12-Jun-13
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
TO-263AB
0.245 (6.22)
MIN.
3
0.057 (1.45)
0.045 (1.14)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
2
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
0.671 (17.04)
0.651 (16.54)
PIN
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
7° REF.
0.076 (1.93) REF.
45° REF.
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 88782
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000