MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT Datasheet

MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
ITO-220AB
2
3
1
1
MBR20HxxCT
PIN 1
PIN 2
PIN 3
CASE
2
MBRF20HxxCT
PIN 1
PIN 2
PIN 3
TO-263AB
K
2
1
MBRB20HxxCT
PIN 1
PIN 2
K
HEATSINK
3
•
•
•
•
•
•
•
•
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
100 μA
TJ max.
175 °C
Package
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
Revision: 12-Jun-13
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Document Number: 88787
1
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MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
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Vishay General Semiconductor
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Working peak reverse voltage
VRWM
35
45
50
60
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified
current (fig. 1)
total device
per diode
A
10
EAS
80
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode 
at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
20
10
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
20
IF(AV)
Non-repetitive avalanche energy per diode 
at 25 °C, IAS = 4 A, L = 10 mH
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
UNIT
mJ
A
mJ
VC
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to 175
°C
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
per diode
VF (1)
Maximum reverse current per diode
IR (2)
MBR20H35CT
MBR20H45CT
TEST CONDITIONS
TYP.
MAX.
MBR20H50CT
MBR20H60CT
TYP.
MAX.
IF = 10 A
TC = 25 °C
-
0.63
-
0.71
IF = 10 A
TC = 125 °C
0.49
0.55
0.57
0.61
IF = 20 A
TC = 25 °C
-
0.75
-
0.85
IF = 20 A
TC = 125 °C
Rated VR
UNIT
V
0.62
0.68
0.68
0.71
TJ = 25 °C
-
100
-
100
μA
TJ = 125 °C
4.0
12
2.0
12
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical resistance, junction to case per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
2.0
4.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
MBR20H45CT-E3/45
PREFERRED P/N
1.85
45
50/tube
DELIVERY MODE
Tube
ITO-220AB
MBRF20H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB20H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB20H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR20H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF20H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB20H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB20H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 12-Jun-13
Document Number: 88787
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Average Forward Current (A)
MBR, MBRB
20
15
MBRF
10
5
Instantaneous Reverse Leakage
Current (mA)
25
10
1
TJ = 125 °C
0.1
MBR20H35CT, MBR20H45CT
MBR20H50CT, MBR20H60CT
0.01
0.001
TJ = 25 °C
0.0001
0
0
25
50
75
100
125
150
0
175
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 1 - Forward Current Derating Curve (Total)
175
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 150 °C
125
100
75
50
25
MBR20H35CT, MBR20H45CT
MBR20H50CT, MBR20H60CT
100
10
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
10
TJ = 150 °C
1
TJ = 25 °C
TJ = 125 °C
0.1
MBR20H35CT, MBR20H45CT
MBR20H50CT, MBR20H60CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 12-Jun-13
Document Number: 88787
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.191 (4.85)
0.171 (4.35)
0.035 (0.89)
0.025 (0.64)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 12-Jun-13
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
TO-263AB
0.245 (6.22)
MIN.
3
0.057 (1.45)
0.045 (1.14)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
2
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
0.671 (17.04)
0.651 (16.54)
PIN
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
7° REF.
0.076 (1.93) REF.
45° REF.
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 88787
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000