Si7336DP Datasheet

Si7336DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D Qg Optimized
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.00325 @ VGS = 10 V
30
0.0042 @ VGS = 4.5 V
27
Qg (Typ)
36
APPLICATIONS
D Low-Side DC/DC Conversion
− Notebook
− Server
− Workstation
D Synchronous Rectifier, POL
PowerPAK SO-8
S
6.15 mm
1
2
5.15 mm
S
3
D
S
4
G
D
8
7
D
6
G
D
5
D
S
Bottom View
N-Channel MOSFET
Ordering Information: Si7336DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
L = 1.0 mH
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
18
25
15
Operating Junction and Storage Temperature Range
70
A
4.5
IAS
PD
V
30
IDM
Continuous Source Current (Diode Conduction)a
Avalanche Current
ID
Unit
1.8
50
5.4
1.9
3.4
1.2
TJ, Tstg
−55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
18
23
50
65
1.0
1.5
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
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Si7336DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
30
VDS w 5 V, VGS = 10 V
rDS(on)
mA
A
VGS = 10 V, ID = 25 A
0.0026
0.00325
VGS = 4.5 V, ID = 19 A
0.0033
0.0042
gfs
VDS = 15 V, ID = 25 A
110
VSD
IS = 2.9 A, VGS = 0 V
0.72
W
S
1.1
V
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
5600
VDS = 15 V,, VGS = 0 V,, f = 1 MHz
860
36
VDS = 15 V,, VGS = 4.5 V,, ID = 20 A
0.8
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
10
td(on)
Rise Time
50
18
Rg
Turn-On Delay Time
pF
p
415
IF = 2.9 A, di/dt = 100 A/ms
1.3
2.0
24
35
16
25
90
140
32
50
45
70
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
VGS = 10 thru 4 V
50
40
I D − Drain Current (A)
I D − Drain Current (A)
50
30
20
10
40
30
20
TC = 125_C
10
25_C
3V
−55_C
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.005
Capacitance
7000
Ciss
VGS = 4.5 V
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
6000
0.004
0.003
VGS = 10 V
0.002
5000
4000
3000
2000
0.001
0.000
0
0
10
20
30
40
50
0
6
ID − Drain Current (A)
24
30
VGS = 10 V
ID = 25 A
rDS(on) − On-Resiistance
(Normalized)
1.4
4
3
2
1.2
1.0
0.8
1
0
0
5
10
15
20
25
30
35
40
0.6
−50
45
−25
0
Source-Drain Diode Forward Voltage
r DS(on) − On-Resistance ( W )
10
TJ = 150_C
TJ = 25_C
75
100
125
150
0.012
ID = 25 A
0.009
0.006
0.003
0.000
0.1
0.00
50
On-Resistance vs. Gate-to-Source Voltage
0.015
50
1
25
TJ − Junction Temperature (_C)
Qg − Total Gate Charge (nC)
I S − Source Current (A)
18
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 20 A
5
12
VDS − Drain-to-Source Voltage (V)
Gate Charge
6
V GS − Gate-to-Source Voltage (V)
Coss
Crss
1000
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
1.0
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
ID = 250 mA
160
−0.0
Power (W)
V GS(th) Variance (V)
0.2
−0.2
−0.4
120
80
−0.6
40
−0.8
−1.0
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
TJ − Temperature (_C)
0.1
1
10
Time (sec)
100
Safe Operating Area, Junction-to-Case
Limited by rDS(on)*
1 ms
10
10 ms
100 ms
1
1s
0.1
10 s
TC = 25_C
Single Pulse
dc
0.01
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72415.
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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