Si7212DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 6.8 0.039 @ VGS = 4.5 V 6.6 D TrenchFETr Gen II Power MOSFET D 100% Rg Tested D Space Savings Optimized for Fast Switching Qg (Typ) 7 RoHS COMPLIANT APPLICATIONS D Synchronous Rectification D Intermediate Driver PowerPAKr 1212-8 D1 S1 3.30 mm 1 3.30 mm G1 2 S2 3 G2 4 G1 D1 8 D2 G2 D1 7 D2 6 D2 5 Bottom View S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7212DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak PD V 6.8 4.9 4.9 IDM Unit 3.5 A 1.1 A 20 2.2 2.6 1.3 1.4 0.69 TJ, Tstg −55 to 150 Temperature)b,c W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 38 48 77 94 4.3 5.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73128 S-51128—Rev. B, 13-Jun-05 www.vishay.com 1 Si7212DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 0.6 Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 20 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 6.8 A 0.030 0.036 VGS = 4.5 V, ID = 6.6 A 0.032 0.039 gfs VDS = 10 V, ID = 6.8 A 20 VSD IS = 2.2 A, VGS = 0 V 0.8 1.2 7 11 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = 15 V, VGS = 4.5 V, ID = 6.8 A f = 1 MHz 1.5 td(on) Rise Time tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.7 Rg Turn-On Delay Time 2 IF = 2.2 A, di/dt = 100 A/ms 3.0 4.5 10 15 12 20 30 45 10 15 15 30 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 3 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 2V 4 12 8 TC = 125_C 4 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 73128 S-51128—Rev. B, 13-Jun-05 Si7212DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 1000 0.04 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 VGS = 4.5 V 0.03 VGS = 10 V 0.02 Ciss 800 600 400 Coss 0.01 Crss 200 0.00 0 0 4 8 12 16 20 0 5 10 ID − Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 6.8 A VGS = 10 V ID = 6.8 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 3 6 9 12 0.6 −50 15 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 20 I S − Source Current (A) 15 0.08 ID = 6.8 A 0.06 ID = 2 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 73128 S-51128—Rev. B, 13-Jun-05 1.2 1.4 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7212DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA −0.0 30 Power (W) V GS(th) Variance (V) 0.2 −0.2 20 −0.4 10 −0.6 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 600 Time (sec) TJ − Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient IDM Limited *Limited by rDS(on) I D − Drain Current (A) 10 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 P(t) = 1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 77_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73128 S-51128—Rev. B, 13-Jun-05 Si7212DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73128. Document Number: 73128 S-51128—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1