Si7356DP Datasheet

Si7356DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.003 @ VGS = 10 V
30
0.004 @ VGS = 4.5 V
27
Qg (Typ)
APPLICATIONS
D Low-Side DC/DC Conversion
– Notebook
– Server
– Workstation
D Point-of-Load Conversion
45
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information: Si7356DP-T1
Si7356DP-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
18
25
IDM
Continuous Source Current (Diode Conduction)a
V
30
ID
15
A
70
4.5
1.8
5.4
1.9
3.4
1.2
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case (Drain)
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
18
23
50
65
1.0
1.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72222
S-41905—Rev. C, 14-Oct-04
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Si7356DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 10 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
mA
30
A
VGS = 10 V, ID = 25 A
0.0024
0.003
VGS = 4.5 V, ID = 19 A
0.0032
0.004
gfs
VDS = 15 V, ID = 25 A
110
VSD
IS = 2.9 A, VGS = 0 V
0.72
1.1
45
70
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
16
Rg
1.1
td(on)
27
Gate Resistance
Turn-On Delay Time
Rise Time
VDS = 15 V,, VGS = 4.5 V,, ID = 20 A
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
20
IF = 2.9 A, di/dt = 100 A/ms
nC
W
40
21
35
107
160
43
65
45
70
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
VGS = 10 thru 4 V
50
I D – Drain Current (A)
I D – Drain Current (A)
50
40
30
20
10
40
30
20
TC = 125_C
10
25_C
3V
–55_C
0
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
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2
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS – Gate-to-Source Voltage (V)
Document Number: 72222
S-41905—Rev. C, 14-Oct-04
Si7356DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
8500
0.004
6800
VGS = 4.5 V
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
On-Resistance vs. Drain Current
0.005
0.003
VGS = 10 V
0.002
Ciss
5100
3400
0.001
1700
0.000
0
Coss
Crss
0
10
20
30
40
50
0
6
ID – Drain Current (A)
Gate Charge
24
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 20 A
5
VGS = 10 V
ID = 25 A
1.4
rDS(on) – On-Resiistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
18
VDS – Drain-to-Source Voltage (V)
6
4
3
2
1.2
1.0
0.8
1
0
0
10
20
30
40
50
0.6
–50
60
–25
0
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.015
r DS(on) – On-Resistance ( W )
50
10
TJ = 150_C
1
TJ = 25_C
0.012
ID = 25 A
0.009
0.006
0.003
0.000
0.1
0.00
25
TJ – Junction Temperature (_C)
Qg – Total Gate Charge (nC)
I S – Source Current (A)
12
0.2
0.4
0.6
0.8
VSD – Source-to-Drain Voltage (V)
Document Number: 72222
S-41905—Rev. C, 14-Oct-04
1.0
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si7356DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
ID = 250 mA
0.2
–0.0
Power (W)
V GS(th) Variance (V)
160
–0.2
–0.4
120
80
–0.6
40
–0.8
–1.0
–50
–25
0
25
50
75
100
125
0
0.001
150
0.01
TJ – Temperature (_C)
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
*Limited by rDS(on)
1 ms
10
10 ms
100 ms
1
1s
0.1
10 s
TC = 25_C
Single Pulse
dc
0.01
10
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
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4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72222
S-41905—Rev. C, 14-Oct-04
Si7356DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72222.
Document Number: 72222
S-41905—Rev. C, 14-Oct-04
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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