Si7356DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 30 0.004 @ VGS = 4.5 V 27 Qg (Typ) APPLICATIONS D Low-Side DC/DC Conversion – Notebook – Server – Workstation D Point-of-Load Conversion 45 PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D G 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: Si7356DP-T1 Si7356DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 18 25 IDM Continuous Source Current (Diode Conduction)a V 30 ID 15 A 70 4.5 1.8 5.4 1.9 3.4 1.2 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72222 S-41905—Rev. C, 14-Oct-04 www.vishay.com 1 Si7356DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 25 A 0.0024 0.003 VGS = 4.5 V, ID = 19 A 0.0032 0.004 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 45 70 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 16 Rg 1.1 td(on) 27 Gate Resistance Turn-On Delay Time Rise Time VDS = 15 V,, VGS = 4.5 V,, ID = 20 A tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 20 IF = 2.9 A, di/dt = 100 A/ms nC W 40 21 35 107 160 43 65 45 70 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 20 10 40 30 20 TC = 125_C 10 25_C 3V –55_C 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Document Number: 72222 S-41905—Rev. C, 14-Oct-04 Si7356DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 8500 0.004 6800 VGS = 4.5 V C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.005 0.003 VGS = 10 V 0.002 Ciss 5100 3400 0.001 1700 0.000 0 Coss Crss 0 10 20 30 40 50 0 6 ID – Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 20 A 5 VGS = 10 V ID = 25 A 1.4 rDS(on) – On-Resiistance (Normalized) V GS – Gate-to-Source Voltage (V) 18 VDS – Drain-to-Source Voltage (V) 6 4 3 2 1.2 1.0 0.8 1 0 0 10 20 30 40 50 0.6 –50 60 –25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) – On-Resistance ( W ) 50 10 TJ = 150_C 1 TJ = 25_C 0.012 ID = 25 A 0.009 0.006 0.003 0.000 0.1 0.00 25 TJ – Junction Temperature (_C) Qg – Total Gate Charge (nC) I S – Source Current (A) 12 0.2 0.4 0.6 0.8 VSD – Source-to-Drain Voltage (V) Document Number: 72222 S-41905—Rev. C, 14-Oct-04 1.0 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7356DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 ID = 250 mA 0.2 –0.0 Power (W) V GS(th) Variance (V) 160 –0.2 –0.4 120 80 –0.6 40 –0.8 –1.0 –50 –25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area, Junction-to-Case 100 *Limited by rDS(on) 1 ms 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72222 S-41905—Rev. C, 14-Oct-04 Si7356DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72222. Document Number: 72222 S-41905—Rev. C, 14-Oct-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1