AD844: Military Data Sheet (Rev. A)

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add device classes Q and V requirements and radiation hardened
requirements. Add case outline 2. -ro
00-07-17
R. MONNIN
B
Drawing updated to reflect current requirements. -rrp
05-01-20
R. MONNIN
C
Update drawing to current requirements of MIL-PRF-38535. -rrp
11-07-19
C. SAFFLE
D
Add device type 02. Delete radiation exposure circuit. - ro
12-05-31
C. SAFFLE
REV
SHEET
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REV STATUS
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PMIC N/A
PREPARED BY
RICK C. OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
CHARLES E. BESORE
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
MICHAEL A. FRYE
DRAWING APPROVAL DATE
93-05-24
REVISION LEVEL
D
MICROCIRCUIT, LINEAR, OPERATIONAL
AMPLIFIER, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-89644
1 OF 11
5962-E330-12
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
89644
01
P
A
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
For device class V:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
89644
01
V
P
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
AD844
AD844
Operational amplifier
Operational amplifier
01
02
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
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A
REVISION LEVEL
D
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
P
2
Descriptive designator
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
Package style
8
20
Dual-in-line package
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (±VS) ....................................................................................... ±18 V
Common-mode input voltage .......................................................................... ±VS
Output short circuit duration ............................................................................ Indefinite
Differential input voltage ................................................................................. +VS and –VS
Internal power dissipation (PD): 2/
Case P ......................................................................................................... 1.3 W
Case 2 ......................................................................................................... 1.0 W
Junction temperature (TJ) ............................................................................... +175°C
Lead temperature (soldering, 60 seconds) ...................................................... +300°C
Storage temperature range ............................................................................. -65°C to +150°C
Thermal resistance, junction-to-case (θJC):
Cases P and 2 ............................................................................................. +35°C/W
Thermal resistance, junction-to-ambient (θJA):
Case P ......................................................................................................... +110°C/W
Case 2 ......................................................................................................... +100°C/W
1.4 Recommended operating conditions.
Positive supply voltage (+VS) .......................................................................... +15 V
Negative supply voltage (-VS) ......................................................................... -15 V
Ambient operating temperature range (TA) ..................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01 ............................................................................................. 100 krads(Si) 3/
Maximum total dose available (dose rate ≤ 10 mrads(Si)/s):
Device type 02 ............................................................................................. 50 krads(Si) 4/
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Maximum internal power dissipation is specified so that TJ does not exceed +175°C at an ambient temperature of +25°C.
Derate the P package at 8.7 mW/°C. Derate the 2 package at 10 mW/°C.
3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883 method 1019, condition D.
STANDARD
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SIZE
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A
REVISION LEVEL
D
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein .
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1 .
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
STANDARD
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A
REVISION LEVEL
D
SHEET
4
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
STANDARD
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A
REVISION LEVEL
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SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
Group A
subgroups
±VS = ±15 V
Device
type
Limits 3/
unless otherwise specified
Input offset voltage
VIO
1
VCM = 0 V 4/
Min
Max
-300
+300
-500
+500
01
-1000
+1000
02
-1000
+1000
01, 02
2,3
M,D,P,L,R
1
M,D,P,L
Power supply rejection
ratio
+PSRR
+VS = +5 V to +18 V, 5/
1,2,3
Unit
01, 02
20
µV
µV/V
-VS = -15 V
-PSRR
-VS = -5 V to -18 V, 5/
20
+VS = +15 V
Output voltage swing
+VOUT
RL = 500 Ω 5/
1,2,3
01, 02
10
-10
-VOUT
Quiescent current
IQ
1
VOUT = 0 V 5/
01, 02
7.5
2,3
Input bias current
-IIB
1
VCM = 0 V 6/
M,D,P,L,R
1
M,D,P,L
1
VCM = 0 V 6/
01, 02
-450
+450
-2500
+2500
01
-2500
+2500
02
-2500
+2500
01, 02
-400
+400
-1300
+1300
01
-1300
+1300
02
-1300
+1300
2,3
M,D,P,L,R
1
M,D,P,L
Common mode input
voltage range
Open loop transresistance
+IVR
5/ 7/
1,2,3
01, 02
+10
nA
V
-10
-IVR
TZ
mA
9.5
2,3
+IIB
V
VOUT = ±10 V,
1
RL = 500 Ω
01, 02
2,3
M,D,P,L,R
1
M,D,P,L
2.2
MΩ
1.3
01
1.3
02
1.3
See footnotes at end of table.
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REVISION LEVEL
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SHEET
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TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
Group A
subgroups
±VS = ±15 V
Device
type
unless otherwise specified
Input bias current versus
supply
+TCS
Min
5 V to 18 V 5/ 8/ 9/
4
-TCS
Input bias current versus
common-mode
+TCCM
VCM = ±10 V 5/ 6/ 8/
CMRR
VCM = ±10 V 5/ 8/
01, 02
Unit
Max
150
5,6
200
4
250
5,6
300
4
-TCCM
Common-mode rejection
ratio
Limits 3/
01, 02
150
5,6
200
4
160
5,6
200
4,5,6
01, 02
35
nA/V
nA/V
µV/V
1/ Device type 01 supplied to this drawing has been characterized through all levels P, L, and R of irradiation.
Device type 02 supplied to this drawing has been characterized through level “L” of irradiation.
However, device type 01, is only tested at the “R” level and device type 02 is only tested at the ”L” level. Pre and Post
irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical
measurements for any RHA level, TA = +25°C.
2/ Device type 01 may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A for device type 01 and condition D for device type 02. Device type 02 is tested at low dose rate.
3/ The magnitude convention is used to establish the limits for these tests.
4/ Input offset voltage parameters are guaranteed after the equivalent of five minutes at TA = +25°C.
5/ This parameter is not tested post irradiation.
6/ Bias current parameters are guaranteed maximum after the equivalent of five minutes at TA = +25°C.
7/ This parameter is guaranteed by testing common-mode rejection ratio.
8/ Guaranteed, if not tested, to the limits specified in table I herein.
9/ Test conditions are as follows, when +VS = +15 V, -VS = -5 V to –18 V, and when –VS = -15 V, +VS = +5 V to +18 V.
STANDARD
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REVISION LEVEL
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SHEET
7
Device types
Case outlines
Terminal
number
01, 02
P
2
Terminal symbol
1
NULL
NC
2
-INPUT
NULL
3
+INPUT
NC
4
-VS
NC
5
TZ
(See note 1)
-INPUT
6
OUTPUT
NC
7
+VS
+INPUT
8
NULL
NC
9
---
NC
10
---
-VS
11
---
NC
12
---
TZ
(See note 1)
13
---
NC
14
---
NC
15
---
OUTPUT
16
---
NC
17
---
+VS
18
---
NC
19
---
NC
20
---
NULL
NOTE:
1. In this device, transient current at the input does not cause voltage spikes at the summing node while the amplifier
is settling. Furthermore, all the transient current is delivered to the slewing (TZ) node via a short signal path ( the
grounded base stages and the wideband current mirrors). The current available to charge the capacitance at TZ node,
is always proportional to the input error current, and the slew rate limitations associated with the large signal response
of operational amplifiers do not occur. The rise and fall times are almost independent of signal level.
FIGURE 1. Terminal connections.
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REVISION LEVEL
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B or C. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
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REVISION LEVEL
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
1
1
1,2,3,4,5,6 1/ 2/
1,2,3,
4,5,6
1/ 2/
1,2,3,
4,5,6
1/ 2/ 3/
Group A test
requirements (see 4.4)
1,2,3,4,5,6 2/
1,2,3,4,5,6 2/
1,2,3,4,5,6 2/
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1
1
1 3/
1
1
1
1
1
1
1/ PDA applies to subgroup 1. VOS, IOS, and deltas excluded from PDA.
2/ Subgroup 4, 5, and 6 if not tested, shall be guaranteed to the limits specified in table I herein.
3/ Delta limits as specified in table IIB shall be required where specified, and delta limits shall be
computed with reference to the previous endpoint electrical parameters.
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25°C.
Test
Symbol
End point
Delta
Input offset voltage
VOS
±300 µV
±150 µV
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition B or C. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
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REVISION LEVEL
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4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 01 and condition D for device type 02 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and
have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime-VA.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-89644
A
REVISION LEVEL
D
SHEET
11
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 12-05-31
Approved sources of supply for SMD 5962-89644 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-8964401PA
24355 (2)
AD844SQ/883B
5962-8964401VPA
24355 (4)
AD844SQ/QMLV
5962-8964401V2A
3/
AD844SE/QMLV
5962R8964401VPA
24355 (4)
AD844SQ/QMLR
5962R8964401V2A
3/
AD844SE/QMLR
5962L8964402VPA
24355 (4)
AD844SQ/QMLL
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from approved source of supply.
Vendor CAGE
number
Vendor name
and address
24355
Analog Devices (2)
RT 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 804 Woburn Street
Wilmington, MA 01887-3462
24355
Analog Devices (4)
RT 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 7910 Triad Center Drive
Greensboro, NC 27409-9605
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.