OP27: Military Data Sheet (Rev. B)

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Changes in accordance with NOR 5962-R140-96.
96-06-12
M. A. FRYE
B
Add device type 02. Add RHA requirements. Add case outlines G, H, and P.
Changes were made to paragraphs 1.3, 1.4, table I, and table IIA.
Update boilerplate. – rrp
98-09-02
R. MONNIN
C
Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535.
Add a new footnote to paragraph 1.5 and Table I. - ro
05-04-19
R. MONNIN
D
Add a note to case outline G as specified under figure 1. - ro
08-01-29
R. HEBER
11-03-30
C. SAFFLE
Add device type 03 tested at low dose rate. Make changes to footnotes 1/
and 2/ as specified under Table I. Make change to the VOS test subgroups
from 4 and 6 to 1 and 3 as specified under Table I. Make change to the
TCVOS test subgroups from 5 and 6 to 2 and 3 as specified under Table I.
E
Make change to the CMRR and AVO test subgroups from 4, 5, 6 to 1, 2, 3 as
specified under Table I. Make change to IN and EN tests subgroup from 1 to 4
as specified in Table I. Make change to paragraph 4.4.4.1 and Table IIB.
Delete paragraphs 4.4.4.1.1 and 4.4.4.2. - ro
REV
SHEET
REV
SHEET
REV STATUS
REV
E
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E
E
E
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E
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OF SHEETS
SHEET
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5
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PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
MICHAEL FRYE
DRAWING APPROVAL DATE
95-07-17
REVISION LEVEL
E
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, LOW NOISE, PRECISION,
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-94680
1 OF 13
5962-E072-11
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
G
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
94680
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
03
Circuit function
OP-27B
OP-27A
OP-27A
Low noise precision operational amplifier
Low noise precision operational amplifier
Low noise precision operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device requirements documentation
Device class
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
G
H
P
2
Descriptive designator
MACY1-X8
GDFP1-F10 or CDFP2-F10
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
8
10
8
20
Package style
Can
Flat pack
Dual-in-line
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage (VS) ......................................................................................
Internal power dissipation ...........................................................................
Input voltage ................................................................................................
Output short-circuit duration ........................................................................
Differential input voltage ..............................................................................
Differential input current ..............................................................................
Storage temperature range .........................................................................
Operating temperature range ......................................................................
Lead temperature (soldering, 60 seconds) ..................................................
Junction temperature range (TJ) ..................................................................
22 V
500 mW
22 V 2/
Indefinite
0.7 V 3/
25 mA 3/
-65C to +150C
-55C to +125C
+300C
-65C to +150C
Thermal resistance, junction-to-case (JC) .................................................. See MIL-STD-1835
Thermal resistance, junction-to-ambient (JA):
Cases G and H ......................................................................................... 150C/W
Case P ..................................................................................................... 119C/W
Case 2 ...................................................................................................... 110C/W
1.4 Recommended operating conditions.
Supply voltage (VS) ..................................................................................... 4.5 V to 18 V
Source resistor (RS) .................................................................................... 50 
Ambient operating temperature range (TA) ................................................. -55C to +125C
1.5 Radiation features:
Device type 02:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ................. 100 krads (Si) 4/
Device type 03:
Maximum total dose available (dose rate  10 m rads(Si)/s) ....................... 50 krads (Si) 5/
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ For supply voltages less than 22 V, the absolute maximum input voltage is equal to the supply voltages.
3/ The device inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low
noise. If differential input voltage exceeds 0.7 V, the input current should be limited to 25 mA.
4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A.
5/ For device type 03, radiation end point limits for the noted parameters are guaranteed for the conditions specified in
MIL-STD-883, test method 1019, condition D.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked.
Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in
accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/ 3/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
Device
type
Min
1
VOS
Input offset voltage
01
5/
Input offset current
TCVOS
02, 03
-25
25
-60
60
M,D,P,L,R
1
02
-100
100
M,D,P,L
1
03
-100
100
2, 3
01
TA = +125C, -55C
1.3
02, 03
1
IOS
-0.6
01
02, 03
PSRR
+50
-100
100
M,D,P,L
1
03
-100
100
1
01
-55
+55
-95
+95
-40
+40
-60
+60
02, 03
2, 3
Power supply rejection 5/
ratio
-50
02
1
IVR
+35
1
2, 3
Input voltage range
-35
M,D,P,L,R
IIB
M,D,P,L,R
1
02
-1000
1000
M,D,P,L
1
03
-1000
1000
1
01, 02,
-11
+11
2, 3
03
-10.3
+10.3
1
01
5/ 6/
VS = 4 V to 18 V
10
2, 3
VS = 4.5 V to 18 V
1
VS = 4 V to 18 V
nA
V
V/V
20
02, 03
2, 3
VS = 4.5 V to 18 V
nA
85
2, 3
Average input bias current
V/C
0.6
50
2, 3
1
V
200
2, 3
Average input offset
voltage
Max
60
2, 3
1
Unit
Limits 4/
10
16
See footnotes at end of table.
STANDARD
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DSCC FORM 2234
APR 97
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A
REVISION LEVEL
E
SHEET
5
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Output voltage swing
5/
VOUT
Conditions 1/ 2/ 3/
-55C  TA   +125C
unless otherwise specified
Group A
subgroups
1
RL  2 k
Device
type
01
RL  600 
RL  2 k
2, 3
RL  2 k
1
02, 03
RL  600 
2, 3
RL  2 k
IS
Supply current
Power dissipation
5/
Offset adjustment range 5/
PD
VOS
ADJ
+ISC
Output short-circuit
current
5/
Input noise voltage
5/ 7/
EN
Input noise current
5/ 7/
IN
Slew rate
SR
Min
Max
-12
+12
-10
+10
-11
+11
-12
+12
-10
+10
-11.5
11.5
V
1
01, 02,
03
4.67
M,D,P,L,R
1
02
4.7
M,D,P,L
1
03
4.7
No load, TA = +25C
1
01, 02,
03
140
mW
RPK = 10 k, TA = +25C
1
01, 02,
03
+0.5
mV
TA = 25C
1
01, 02,
03
+70
mA
No load, TA = +25C
-0.5
mA
-70
-ISC
5/
Unit
Limits 4/
fo = 1 Hz to 100 Hz,
TA = +25C
fo = 1 Hz to 100 Hz,
TA = +25C
VOUT = 5 V, RL  2 k,
4
01, 02,
03
50
nVRMS
4
01, 02,
03
40
pARMS
4
01, 02,
1.7
V/s
03
CL = 100 pF, TA = +25C,
measured at -2.5 V to
+2.5 V
Gain bandwidth
Common mode
rejection ratio
5/
5/
GBW
TA = +25C
4
01, 02,
03
5.0
MHz
CMRR
VCM = IVR = 11 V
1
01
106
dB
2,3
VCM = IVR = 10.3 V
1
VCM = IVR = 11 V
100
02, 03
2,3
VCM = IVR = 10.3 V
114
108
See footnotes at end of table.
STANDARD
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
E
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/ 2/ 3/
-55C  TA  +125C
unless otherwise specified
Group A
subgroups
Device
type
Min
Large signal voltage gain
AVO
1
VOUT = 10 V, RL  2 k
01
Unit
Limits 4/
Max
1000
V/mV
800
VOUT = 10 V, RL  600 
VOUT = 10 V, RL  2 k
2,3
VOUT = 10 V, RL  2 k
1
02, 03
1000
M,D,P,L,R
1
02
100
M,D,P,L
1
03
100
1
02, 03
800
VOUT = 10 V, RL  600 
500
2,3
VOUT = 10 V, RL  2 k
600
1/
Device 02 supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation.
Device 03 supplied to this drawing have been characterized through all levels P and L of irradiation.
However, device 02 is only tested at the “R” level and device type 03 is only tested at the “L” level. Pre and Post irradiation
values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for
any RHA level, TA = +25C.
2/
Unless otherwise specified, VS = 15 V and source resistance (RS) = 50 .
3/
The 02 device may be low dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A for device type 02. Device type 03, has been tested at low dose rate.
4/
The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used
in this table. Negative current shall be defined as conventional current flow out of a device terminal.
5/
This parameter is not tested post-irradiation.
6/
Input voltage range is defined as the VCM range used for the CMRR test.
7/
This test shall be 100% tested at preburn-in of interim electrical parameters and guaranteed to the limits specified in
table I herein.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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SHEET
7
Device types
02
02, 03
01 and 02
Case outlines
G, P
H
2
Terminal
number
Terminal symbol
1
BALANCE
NC
NC
2
-INPUT
NULL
BALANCE
3
+INPUT
-INPUT
NC
4
-VS
SEE NOTE 1
+INPUT
NC
5
NC
-VS
-INPUT
6
OUT
NC
NC
7
+VS
OUT
+INPUT
8
BALANCE
+VS
NC
9
---
NULL
NC
10
---
NC
-VS
11
---
---
NC
12
---
---
NC
13
---
---
NC
14
---
---
NC
15
---
---
OUT
16
---
---
NC
17
---
---
+VS
18
---
---
NC
19
---
---
NC
20
---
---
BALANCE
NOTES:
1. For case outline G only, the –VS pin is tied to the case of the can package.
2. NC = No connection
FIGURE 1. Terminal connections.
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FIGURE 2. Radiation exposure circuit.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
STANDARD
MICROCIRCUIT DRAWING
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REVISION LEVEL
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10
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
1
1
1
1,2,3,4 1/
1,2,3,4 1/
1,2,3,4 1/ 2/
1,2,3,4
1,2,3,4
1,2,3,4
1
1
1 2/
1
1
1
Device
class Q
---
---
Device
class V
1,4
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits
shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25C. 1/ 2/
Parameter
Device type
Limit
Delta
Min
Max
VIO
02, 03
-135
+135
75 V
IIB
02, 03
-70
+70
10 nA
1/ Deltas are performed at room temperature.
2/ 240 hour burn-in and 1,000 hour operating group C life test.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
11
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C,
after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A device type 02, condition D for device type 03 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
12
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0547.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-94680
A
REVISION LEVEL
E
SHEET
13
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 11-03-30
Approved sources of supply for SMD 5962-94680 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9468001M2A
3/
OP27BRC/883C
5962R9468002VGA
24355
OP27AJ/QMLR
5962R9468002VHA
24355
OP27AL/QMLR
5962R9468002VPA
24355
OP27AZ/QMLR
5962R9468002V2A
24355
OP27ARC/QMLR
5962L9468003VHA
24355
OP27AL/QMLL
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
24355
Vendor name
and address
Analog Devices
Route 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 7910 Triad Center Drive
Greensboro, NC 27409-9605
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.