NTD6414AN D

NTD6414AN, NVD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 mW
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
(Note 1)
100 V
37 mW @ 10 V
32 A
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
ID
32
A
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
RqJC
Steady
State
TC = 25°C
TC = 100°C
S
22
PD
100
W
IDM
117
A
TJ, Tstg
−55 to
+175
°C
IS
32
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 32 A, L = 0.3 mH, RG = 25 W)
EAS
154
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
260
°C
Pulsed Drain Current
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
N−Channel
G
4
4
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
1.5
°C/W
Junction−to−Ambient (Note 1)
RqJA
37
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
AYWW
64
14ANG
THERMAL RESISTANCE RATINGS
Symbol
2
3
DPAK
CASE 369AA
STYLE 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
1
1 2
1
Gate
2
Drain
AYWW
64
14ANG
Parameter
3
Source
1
Gate
3
Source
2
Drain
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
A
Y
WW
6414AN
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NTD6414AN/D
NTD6414AN, NVD6414AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
107
"100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
2.0
4.0
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 32 A
30
gFS
VGS = 5.0 V, ID = 10 A
18
S
1450
pF
Forward Transconductance
8.3
V
Negative Threshold Temperature
Coefficient
mV/°C
37
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
95
Total Gate Charge
QG(TOT)
40
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
230
nC
1.7
VGS = 10 V, VDS = 80 V, ID = 32 A
8.0
QGD
20
Plateau Voltage
VGP
5.9
V
Gate Resistance
RG
1.9
W
td(on)
11
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 80 V,
ID = 32 A, RG = 6.1 W
tf
52
38
48
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.76
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, IS = 32 A
68
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 32 A
QRR
1.2
V
ns
51
16
195
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
70
10 V
TJ = 25°C
7.5 V
ID, DRAIN CURRENT (A)
50
60
6.0 V
40
30
5.5 V
20
5.0 V
10
50
40
30
20
2
3
4
5
2
4
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 32 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
0.10
VGS = 10 V
TJ = 175°C
0.08
TJ = 125°C
0.06
0.04
TJ = 25°C
0.02
TJ = −55°C
0.00
10
15
20
25
35
30
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
10000
VGS = 0 V
ID = 32 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.07
2.5
TJ = −55°C
0
1
TJ = 25°C
TJ = 125°C
10
4.5 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS w 10 V
6.5 V
60
ID, DRAIN CURRENT (A)
70
2
1.5
TJ = 150°C
1000
TJ = 125°C
100
1
0.5
−50
10
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD6414AN, NVD6414AN
10
TJ = 25°C
VGS = 0 V
2400
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
2800
2000
1600
Ciss
1200
800
400
Coss
Crss
0
0
20
40
60
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
8
VDS
Qgd
60
4
40
2
20
ID = 32 A
TJ = 25°C
0
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
35
0
40
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
35
IS, SOURCE CURRENT (A)
VDS = 80 V
ID = 32 A
VGS = 10 V
t, TIME (ns)
80
VGS
Qgs
6
Figure 7. Capacitance Variation
100
tr
tf
td(off)
td(on)
10
1
1
10
RG, GATE RESISTANCE (W)
TJ = 25°C
VGS = 0 V
30
25
20
15
10
5
0
0.4
100
0.5
0.6
0.7
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.9
Figure 10. Diode Forward Voltage versus
Current
100
160
AVALANCHE ENERGY (mJ)
10 ms
ID, DRAIN CURRENT (A)
100
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
100 ms
10
1 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
ID = 32 A
140
120
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
1 D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTD6414ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6414AN−1G
IPAK
(Pb−Free)
75 Units / Rail
NVD6414ANT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
NTD6414AN, NVD6414AN
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD6414AN, NVD6414AN
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD6414AN/D