Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC564LC4 v04.0514 AMPLIFIERS - LOW NOISE - SMT GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz Typical Applications Features The HMC564LC4 is ideal for use as a LNA or driver amplifier for: Noise Figure: 1.8 dB • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Gain: 17 dB OIP3: 25 dBm Single Supply: +3V @ 51 mA 50 Ohm Matched Input/Output RoHS Compliant 4 x 4 mm Package Functional Diagram General Description The HMC564LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant 4x4 mm SMT package. Operating from 7 to 14 GHz, the HMC564LC4 features extremely flat small signal gain of 17 dB as well as 1.8 dB noise figure and +25 dBm output IP3 across the operating band. This self-biased LNA is ideal for microwave radios due to its consistent output power, single +3V supply operation, and DC blocked RF I/O’s. Electrical Specifications, TA = +25° C, Vdd 1, 2 = +3V Parameter Min. Frequency Range Gain 14 Gain Variation Over Temperature Max. Units GHz 17 dB 0.02 0.03 dB/ °C Noise Figure 1.8 2.2 dB Input Return Loss 15 Output Return Loss 14 dB 13 dBm 14.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 Typ. 7 - 14 10 Output Third Order Intercept (IP3) 25 Supply Current (Idd)(Vdd = +3V) 51 dB dBm 75 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC564LC4 v04.0514 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 10 5 GAIN (dB) RESPONSE (dB) 15 S21 S11 S22 0 -5 15 10 -10 +25C +85C -40C 5 -15 -20 -25 0 0 4 8 12 16 6 20 7 8 FREQUENCY (GHz) 11 12 13 14 15 Output Return Loss vs. Temperature 0 0 +25C +85C -40C +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 10 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 -10 -15 -20 -25 -25 6 7 8 9 10 11 12 13 14 15 6 7 8 FREQUENCY (GHz) 9 10 11 12 13 14 15 13 14 15 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 6 35 5 30 +25C +85C -40C 4 OIP3 (dBm) NOISE FIGURE (dB) 9 AMPLIFIERS - LOW NOISE - SMT 25 25 3 25 20 2 15 1 10 0 +25C +85C -40C 5 6 7 8 9 10 11 12 FREQUENCY (GHz) 13 14 15 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC564LC4 v04.0514 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz 20 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 12 8 +25C +85C -40C 4 12 +25C +85C -40C 8 4 0 0 6 7 8 9 10 11 12 13 14 15 6 7 8 9 FREQUENCY (GHz) 10 11 12 13 14 15 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 8 GHz 0 Pout (dBm), GAIN (dB), PAE(%) 20 +25C +85C -40C -10 ISOLATION (dB) AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature -20 -30 -40 -50 6 7 8 9 10 11 12 13 14 15 10 Pout Gain PAE 5 0 -15 15 -10 FREQUENCY (GHz) -5 0 INPUT POWER (dBm) 20 10 18 9 16 14 8 P1dB Gain 7 12 6 10 5 8 Noise Figure 6 4 3 4 2 2 1 0 0 2.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 8 GHz 3 3.5 Vdd (Vdc) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC564LC4 v04.0514 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc RF Input Power (RFIN) (Vdd = +3.0 Vdc) +5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 12.9 mW/°C above 85 °C) 1.16 W Thermal Resistance (channel to ground paddle) 77.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 2.5 49 3.0 51 3.5 53 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC564LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H564 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC564LC4 v04.0514 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz Pin Descriptions AMPLIFIERS - LOW NOISE - SMT Pin Number 5 Function Description 1, 5 -14, 18, 20, 21, 22, 24 N/C No connection required. These pins may be connected to RF/ DC ground without affecting performance. 2, 4, 15, 17 GND These pins and package bottom must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 19, 23 Vdd1, Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, and 2.2 µF are required. Interface Schematic Application Circuit Component Value C1, C2 100 pF C3, C4 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC564LC4 v04.0514 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Material for Evaluation PCB 116156 Item Description J1, J2 2.92 mm PC mount SMA J3 - J7 DC Pin C1 - C2 100 pF capacitor, 0402 Pkg.. C3 - C4 2.2µF Capacitor, Tantalum U1 HMC564LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6