Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC565LC5 v03.0514 LOW NOISE AMPLIFIERS - SMT GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Typical Applications Features The HMC565LC5 is ideal for use as a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios OIP3: 20 dBm • Point-to-Multi-Point Radios & VSAT Single Supply: +3V @ 53 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military & Space RoHS Compliant 5 x 5 mm Package Functional Diagram General Description Gain: 21 dB The HMC565LC5 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant 5x5mm SMT package. Operating from 6 to 20 GHz, the HMC565LC5 features 21 dB of small signal gain, 2.5 dB noise figure and IP3 of +20 dBm across the operating band. This self-biased LNA is ideal for microwave radios due to its single +3V supply operation, and DC blocked RF I/O’s. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Min. Frequency Range Gain 19 Gain Variation Over Temperature Max. Min. Typ. Max. 12 - 20 21 16 Units GHz 18.5 dB 0.025 0.035 0.025 0.035 dB/ °C Noise Figure 2.5 2.8 2.5 3 dB Input Return Loss 15 12 Output Return Loss 13 15 dB 11 dBm 13 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 Typ. 6 - 12 8 10 9 11 Output Third Order Intercept (IP3) 20 Total Supply Current (Idd)(Vdd = +3V) 53 dB 21 75 53 dBm 75 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC565LC5 v03.0514 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz 30 20 25 10 20 S21 S11 S22 0 15 -10 10 -20 5 -30 +25C +85C -40C 0 0 5 10 15 20 25 30 5 7 9 FREQUENCY (GHz) Input Return Loss vs. Temperature 15 17 19 21 0 +25C +85C -40C +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 13 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 5 7 9 11 13 15 17 19 21 5 7 9 FREQUENCY (GHz) 13 15 17 19 21 17 19 21 Output IP3 vs. Temperature 10 30 8 25 IP3 (dBm) +25C +85C -40C 6 11 FREQUENCY (GHz) Noise Figure vs. Temperature NOISE FIGURE (dB) 11 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT Gain vs. Temperature 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 4 2 20 15 +25C +85C -40C 10 0 5 5 7 9 11 13 15 FREQUENCY (GHz) 17 19 21 5 7 9 11 13 15 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC565LC5 v03.0514 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 12 8 +25C +85C -40C 4 12 8 +25C +85C -40C 4 0 0 5 7 9 11 13 15 17 19 21 5 7 9 11 FREQUENCY (GHz) 13 15 17 19 21 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 12 GHz 25 Pout (dBm), GAIN (dB), PAE(%) 0 -10 ISOLATION (dB) LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature +25C +85C -40C -20 -30 -40 -50 -60 5 7 9 11 13 15 17 19 20 Pout Gain PAE 15 10 5 0 -5 -20 21 -15 FREQUENCY (GHz) -10 -5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 10 25 20 8 Gain 7 P1dB 15 6 5 4 10 3 5 Noise Figure 2 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) 9 1 0 0 2.5 3 3.5 Vdd (Vdc) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC565LC5 v03.0514 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +3.5 Vdc RF Input Power (RFIN)(Vdd = +3.0 Vdc) 0 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 8.5 mW/°C above 85 °C) 0.753 W Thermal Resistance (channel to ground paddle) 119.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +2.5 51 +3.0 53 +3.5 56 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish HMC565LC5 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H565 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC565LC5 v03.0514 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz LOW NOISE AMPLIFIERS - SMT Pin Descriptions 5 Pin Number Function Description 1, 2, 6 - 19, 23 - 25, 27, 29, 31, 32 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 3, 5, 20, 22 GND These pins and package bottom must be connected to RF/DC ground. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 30, 28, 26 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 µF are required. Interface Schematic Application Circuit Component Value C1, C2, C3 100 pF C4, C5, C6 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC565LC5 v03.0514 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 110431 Item Description J1 - J2 PCB Mount K Connector J3 2 mm DC Header C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 2.2 µF Capacitor, Tantalum U1 HMC565LC5 Amplifier PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6