Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1087 v04.1014 AMPLIFIERS - LINEAR & POWER - CHIP 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC1087 is ideal for: High Psat: +39 dBm • Test Instrumentation Power Gain at Psat: +5.5 dB • General Communications High Output IP3: +44 dBm • Radar Small Signal Gain: 11 dB Supply Voltage: +28 V @ 850 mA 50 Ohm Matched Input/Output Die Size: 2 x 4 x 0.1 mm Functional Diagram General Description The HMC1087 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz. The amplifier typically provides 11dB of small signal gain, +39 dBm of saturated output power, and +44 dBm output IP3 at +29 dBm output power per tone. The HMC1087 draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina. Electrical Specifications, Tc = +25°C, Vdd = +28 V, Idd = 850 mA [1] Parameter Min. Frequency Range Typ. Max. Min. 2-6 Small Signal Gain 10 11 Typ. Max. Min. 6 - 18 10 12 10 Typ. Max. Units 18 - 20 GHz 12 dB Gain Flatness ±0.5 ±1.0 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/ °C 8 8 15 dB Input Return Loss Output Return Loss 10 12 12 dB Output Power for 3 dB Compression (P3dB) 38 38 38 dBm Power Gain for 3 dB compression (P3dB) 8.5 8.5 8 dB Saturated Output Power (Psat) 39 40 39 dBm 44 44 43.5 dBm Output Third Order Intercept (IP3) [2] Power Added Efficiency Quiescent Supply Current (Idd @ Vdd = 28V) 24 22 20 % 850 850 850 mA [1] Assumes eutectic attach of die to a 40mil CuMo carrier, and 25°C is maintained at the back of the carrie [2] Measurement taken at Pout / tone = +29 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Gain and Return Loss Gain vs. Temperature 20 20 16 14 0 GAIN (dB) RESPONSE (dB) 10 -10 -20 12 10 8 6 4 -30 2 0 -40 2 4 6 8 10 12 14 16 18 2 20 4 6 8 S21 S11 S22 +25C Input Return Loss vs. Temperature 12 14 16 18 20 0 -5 -5 -10 -10 -15 -20 -25 -30 +85C -40C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 10 FREQUENCY (GHz) FREQUENCY (GHz) -35 -15 -20 -25 -30 -35 -40 -40 2 4 6 8 10 12 14 16 18 20 2 4 6 8 FREQUENCY (GHz) +25C 10 12 14 16 18 20 FREQUENCY (GHz) +85C -40C +25C Gain vs. Bias +85C -40C AMPLIFIERS - LINEAR & POWER - CHIP 18 P3dB vs. Frequency 45 20 18 16 40 POUT (dBm) GAIN (dB) 14 12 10 8 35 6 30 4 2 0 25 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) 24V @ 425 mA 28V @ 425 mA 32V @ 425 mA 20 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 24V @ 850 mA 28V @ 850 mA 32V @ 850 mA P3dB Psat For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Power Added Efficiency vs. Pin 20 40 18 35 30 14 P.A.E. (%) POWER GAIN (dB) 16 12 10 8 25 20 15 6 10 4 5 2 0 0 2 4 6 8 10 12 14 16 18 0 20 3 6 9 12 FREQUENCY (GHz) Linear P3dB 2 GHz 4 GHz 6 GHz Psat 18 21 24 27 30 33 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 18 GHz P3dB vs. Temperature 45 45 40 40 P3dB (dBm) 35 30 25 20 35 30 15 25 10 0 3 6 9 12 15 18 21 PIN (dBm) 24 27 30 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) 2 GHz 4 GHz 6 GHz 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 18 GHz Linear +25C +85C -40C Psat vs. Temperature 45 45 40 40 PSAT (dBm) P3dB (dBm) 2 33 P3dB vs. DC Bias 35 30 35 30 25 25 2 4 6 8 10 12 14 16 18 20 2 4 6 8 FREQUENCY (GHz) 24V @ 425 mA 28V @ 425 mA 32V @ 425 mA 3 15 PIN (dBm) Pout vs. Pin POUT (dBm) AMPLIFIERS - LINEAR & POWER - CHIP Power Gain vs. Frequency 10 12 14 16 18 20 FREQUENCY (GHz) 24V @ 850 mA 28V @ 850 mA 32V @ 850 mA +25C +85C -40C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Psat vs. DC Bias IDS vs. Pin 1.2 1 IDS (A) PSAT (dBm) 40 35 0.8 0.6 0.4 30 0.2 0 25 2 4 6 8 10 12 14 16 18 0 20 3 6 9 12 15 18 21 24 27 30 33 36 38 PIN (dBm) FREQUENCY (GHz) 24V @ 425 mA 28V @ 425 mA 32V @ 425 mA 24V @ 850 mA 28V @ 850 mA 32V @ 850 mA 2 GHz 6 GHz 10 GHz OIP3 vs. Frequency 14 GHz 18 GHz IM3 vs. Pout/Tone 60 80 55 50 60 IM3 (dBc) IP3 (dBm) 45 40 35 30 40 20 25 20 0 2 4 6 8 10 12 14 16 18 20 12 14 16 18 20 FREQUENCY (GHz) Pout= 11dBm/Tone 24 26 28 30 2 GHz 6 GHz 10 GHz Pout= 29 dBm/Tone 32 34 14 GHz 18 GHz Power Dissipation vs. Pin Reverse Isolation vs. Temperature 0 40 35 -10 30 PDISS (W) REVERSE ISOLATION (dB) 22 POUT/TONE (dBm) AMPLIFIERS - LINEAR & POWER - CHIP 1.4 45 -20 -30 25 20 15 10 -40 5 -50 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C 20 0 3 6 9 12 15 18 21 24 27 30 33 PIN (dBm) -40C 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Second Harmonic 5 SECOND HARMONIC (dBc) AMPLIFIERS - LINEAR & POWER - CHIP 100 80 60 40 20 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 POUT (dBm) 2 GHz 6 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +32V Gate Bias Voltage (Vgg) -8V to +0V Maximum Forward Gate Current 4 mA Maximum RF Input Power (RFIN) 34 dBm Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T=85°C) (Derate 236 mW/°C above 85°C) 33 W Thermal Resistance [2] 4.24 °C/W Maximum VSWR [3] 4:1 Storage Temperature -55 to +150 °C Operating Temperature -40 to +85 °C Vdd (V) Idd (mA) +28.0 850 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. [2] Assumes 0.5mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. AMPLIFIERS - LINEAR & POWER - CHIP Absolute Maximum Ratings[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LINEAR & POWER - CHIP Pad Descriptions 7 Pad Number Function Description 1 RFIN This pad is DC coupled and is matched to 50 Ohms. External blocking capacitor is required 2 VGG Gate Bias (Internally isolated from RFIN) 3 RFOUT This pad is DC coupled and is matched to 50 Ohms. External blocking capacitor is required. 4 VDD Drain Bias (Internally isolated from RFOUT) Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LINEAR & POWER - CHIP Application Circuit 8 HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for GaN MMICs The die should be eutectically attached directly to the ground plane (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a copper tungsten or CuMo heat spreader which is then attached to the thermally conductive ground plane (Figure 2). 0.102mm (0.004”) Thick GaN MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Die placement: A heated vacuum collet (180°C) is the preferred method of pick up. Ensure that the area of vacuum contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be avoided during placement. Minimize impact forces applied to the die during auto-placement. Mounting The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean and flat. Eutectic Reflow Process: An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface temperature of 280°C. Limit exposure to temperatures above 300°C to 30 seconds maximum. A die bonder or furnace with 95% N2 / 5% H2 reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal expansion matching is critical for long term reliability. Die Attach Inspection: X-ray or acoustic scan is recommended. Wire Bonding Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: optimize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200°C maximum. 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1087 v04.1014 8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LINEAR & POWER - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10