Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC465 v09.0114 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Typical Applications Features The HMC465 wideband driver is ideal for: Gain: 17 dB • OC192 LN/MZ Modulator Driver Output Voltage to 10 Vp-p • Telecom Infrastructure Saturated Output Power: +24 dBm • Test Instrumentation Supply Voltage: +8V @160mA • Military & Space 50 Ohm Matched Input/Output Die Size: 3.04 x 1.56 x 0.1 mm General Description Functional Diagram The HMC465 is a GaAs MMIC pHEMT Distributed Driver Amplifier die which operates between DC and 20 GHz. The amplifier provides 17 dB of gain, 2.5 dB noise figure and +24 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain flatness is excellent at ±0.25 dB as well as ±1 deg deviation from linear phase from DC - 10 GHz making the HMC465 ideal for OC192 fiber optic LN/MZ modulator driver amplifier as well as test equipment applications. The HMC465 amplifier I/Os are internally matched to 50 Ohms for easy integration into MultiChip-Modules (MCMs). All data is measured with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 °C, Vdd = 8V, Vgg2 = 1.5V, Idd = 160mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6 15 18 Gain Flatness ±0.5 Gain Variation Over Temperature Typ. Max. Min. 6 - 12 15 17 13 ±0.25 Typ. Max. Units 12 - 20 GHz 16.5 dB ±0.5 dB 0.015 0.025 0.015 0.025 0.02 0.03 dB/ °C Noise Figure 3 5 2.5 3.5 3 4.5 dB Input Return Loss 18 Output Return Loss Output Power for 1 dB Compression (P1dB) 20 18 19.5 22.5 16 17 19 22 17 dB 17 dB 20 dBm Saturated Output Power (Psat) 24 24 22 dBm Output Third Order Intercept (IP3) 33 30 26 dBm Saturated Output Voltage 10 10 8 Vp-p Group Delay Variation ±3 ±3 ±3 ps Supply Current (Idd) (Vdd = 8V, Vgg1 = -0.6V Typ.) 160 160 160 mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 160mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz 20 10 16 0 -10 -20 12 8 4 -30 0 0 4 8 12 16 20 24 0 2 4 6 FREQUENCY (GHz) S21 S11 S22 12 14 16 18 20 22 0 -5 -5 -10 -15 -20 +85C -55C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 10 +25C Input Return Loss vs. Temperature -25 -10 -15 -20 -25 -30 -30 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) +25C +85C -55C 10 12 +25C 14 16 18 20 22 20 7 NOISE FIGURE (dB) 8 10 0 -10 -20 -30 +85C -55C Noise Figure vs. Temperature 30 6 5 4 3 2 1 -40 0.00001 8 FREQUENCY (GHz) Low Frequency Gain & Return Loss RESPONSE (dB) 8 FREQUENCY (GHz) AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Gain & Return Loss 0 0.0001 0.001 0.01 0.1 1 10 0 2 4 6 FREQUENCY (GHz) S21 S11 8 10 12 14 16 18 20 22 FREQUENCY (GHz) S22 +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz 30 26 26 Psat (dBm) P1dB (dBm) Psat vs. Temperature 30 22 18 14 18 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) +85C -55C 40 36 32 28 24 20 2 4 6 8 10 12 14 16 18 20 22 +85C +85C 22 -55C 30 25 20 15 10 5 0 5.5 6 6.5 7 7.5 8 Gain P1dB DEVIATION FROM LINEAR PHASE (deg) GROUP DELAY (ps) 20 8.5 Psat IP3 Deviation from Linear Phase -40 -60 -80 -100 2 18 35 -55C 0 1 16 Vdd SUPPLY VOLTAGE (V) Group Delay 0 14 40 FREQUENCY (GHz) +25C 12 Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Idd= 160mA Output IP3 vs. Temperature 0 10 +25C Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) +25C 8 FREQUENCY (GHz) -20 3 4 5 6 FREQUENCY (GHz) 3 22 14 10 IP3 (dBm) AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Output P1dB vs. Temperature 7 8 9 10 5 3 1 -1 -3 -5 0 2 4 6 8 10 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Drain Bias Voltage (Vdd) +9V Gate Bias Voltage (Vgg1) -2 to 0V Gate Bias Current (Igg1) +3.2mA Gate Bias Voltage (Vgg2) (Vdd -8) V to +3 Vdc Gate Bias Current (Igg2) +3.2mA RF Input Power (RFIN)(Vdd = +8V) +23 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) 2.17 W Thermal Resistance (channel to die bottom) 41.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vdd (V) Idd (mA) +7.5 161 +8.0 160 +8.5 159 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Pad Descriptions 5 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. 2 Vgg2 Gate Control 2 for amplifier. +1.5V should be applied to Vgg2 for nominal operation. 3 ACG1 4 ACG2 5 RFOUT & Vdd 6 ACG3 Pin Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. 7 ACG4 8 Vgg1 Gate Control 1 for amplifier. Die Bottom GND Die botton must be connected to RF/DC ground. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Assembly Diagram 6 HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP Device Operation 7 These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. The input to this device should be AC-coupled. To provide the typical 8Vp-p output voltage swing, a 1.2Vp-p AC-coupled input voltage swing is required. 1. Ground the device 2. Set Vgg1 to -2V (no drain current) 3. Set Vgg2 to +1.5V (no drain current) 4. Set Vdd to +8V (no drain current) 5. Adjust Vgg1 for Idd = 160mA (Vgg1 may be varied between -2V and 0V to set Idd to 160mA) 6. Apply RF signal to input. Device Power Down Instructions 1. Remove RF signal from input 2. Remove Vdd 3. Remove Vgg2 4. Remove Vgg1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC465 v09.0114 GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8