SiE812DF Datasheet

SiE812DF
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen II Power MOSFET
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided
Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
ID (A)a
RDS(on) (Ω)e
Silicon
Limit
0.0026 at VGS = 10 V
163
60
0.0034 at VGS = 4.5 V
143
60
VDS (V)
40
Package
Qg (Typ.)
Limit
52 nC
Package Drawing
www.vishay.com/doc?72945
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
• VRM
• DC/DC Conversion: Low-Side
• Synchronous Rectification
D
D
S
G
D
2
1
D
G
D
1
G
2
S
S
3
4
Top View
D
5
5
4
3
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
S
N-Channel MOSFET
For Related Documents
Ordering Information: SiE812DF-T1-E3 (Lead (Pb)-free)
SiE812DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
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ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
163 (Silicon Limit)
60a (Package Limit)
60a
33b, c
27b, c
100
60a
4.3b, c
50
125
125
80
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
Soldering Recommendations (Peak Temperature)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d, e
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
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1
SiE812DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)
Steady State
a, c
Maximum Junction-to-Case (Source)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
RthJA
Typical
20
Maximum
24
Unit
RthJC (Drain)
RthJC (Source)
0.8
1
°C/W
2.2
2.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS = 0 V, ID = 250 µA
40
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
a
ID(on)
On-State Drain Current
Drain-Source On-State Resistancea
a
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 25 A
VDS = 20 V, ID = 25 A
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 25 A
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 20 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Pulse Diode Forward Current
IS = 10 A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
1.5
V
45.5
- 7.1
2.3
mV/°C
3
± 100
1
10
25
V
nA
µA
A
0.0022
0.0028
154
8300
800
360
111
52
25
15
1.15
50
265
50
10
20
15
60
10
0.8
50
65
27
23
0.0026
0.0034
Ω
S
pF
170
80
1.7
75
400
75
15
30
25
90
15
60
100
1.2
75
100
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
100
5V
VGS = 10 V thru 6 V
4V
16
ID - Drain Current (A)
I D - Drain Current (A)
80
60
40
12
8
TC = 125 °C
4
20
25 °C
3V
0
0.0
- 55 °C
0
0.1
0.2
0.3
0.4
0
0.5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0030
10 000
0.0028
8000
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.0026
0.0024
VGS = 10 V
0.0022
6000
4000
2000
Coss
0
20
40
60
80
0
100
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
35
40
125
150
1.8
10
VGS = 10 V, 4.5 V
ID = 25 A
ID = 25 A
1.6
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
Crss
0
0.0020
VDS = 20 V
6
VDS = 32 V
4
2
1.4
1.2
1.0
0.8
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
100
120
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0050
RDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
ID = 25 A
0.0045
0.0040
0.0035
TA = 125 °C
0.0030
0.0025
TA = 25 °C
0.0020
1
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.8
50
2.6
2.2
Power (W)
VGS(th) (V)
40
ID = 250 µA
2.4
2.0
1.8
30
20
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
1 ms
ID - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
180
160
120
Power Dissipation (W)
I D - Drain Current (A)
140
120
100
80
60
100
80
60
40
40
Package Limited
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
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SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74337.
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Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
Package Information
Vishay Siliconix
POLARPAK™ OPTION L
M4
Product datasheet/information page contain
links to applicable package drawing.
10
9
8
7
6
D
G
S
S
D
M2
M1
M3
D
G
S
1
2
3
S
4
c
D
5
A
(Top View)
b1 H4
H1
7
S
8
S
9
G
b1 H1
10
D
K4
6
D
θ
H3 b2 H2
b3
θ
P1
K3
Z
P1
T5
θ
T3
M3
View A
E
E1
T2
T4
T1
T3
θ
T5
M4
A
b4
K4
A1
K3
P1
b4
P1
K2
K1
D1
D
0.26
b5
S
4
b5
S
3
G
2
D
1
b5
View A
(Bottom View)
0.13
0.25
DETAIL Z
D
5
0.39
A
0.20
0.33
0.58
Document Number: 72945
Revision: 11-Aug-08
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Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.80
0.85
0.030
0.031
0.033
A1
0.00
-
0.05
0.000
-
0.002
b1
0.48
0.58
0.68
0.019
0.023
0.027
b2
0.41
0.51
0.61
0.016
0.020
0.024
b3
2.19
2.29
2.39
0.086
0.090
0.094
b4
0.89
1.04
1.19
0.035
0.041
0.047
b5
0.23
0.33
0.43
0.009
0.013
0.017
c
0.20
0.25
0.30
0.008
0.010
0.012
D
6.00
6.15
6.30
0.236
0.242
0.248
D1
5.74
5.89
6.04
0.226
0.232
0.238
E
5.01
5.16
5.31
0.197
0.203
0.209
E1
4.75
4.90
5.05
0.187
0.193
0.199
H1
0.23
-
-
0.009
-
-
H2
0.45
-
0.56
0.018
-
0.022
H3
0.31
0.41
0.51
0.012
0.016
0.020
H4
0.45
-
0.56
0.018
-
0.022
K1
4.22
4.37
4.52
0.166
0.172
0.178
K2
1.08
1.13
1.18
0.043
0.044
0.046
K3
1.37
-
-
0.054
-
-
K4
0.24
-
-
0.009
-
-
M1
4.30
4.50
4.70
0.169
0.177
0.185
M2
3.43
3.58
3.73
0.135
0.141
0.147
M3
0.22
-
-
0.009
-
-
M4
0.05
-
-
0.002
-
-
P1
0.15
0.20
0.25
0.006
0.008
0.010
T1
3.48
3.64
4.10
0.137
0.143
0.161
T2
0.56
0.76
0.95
0.022
0.030
0.037
T3
1.20
-
-
0.047
-
-
T4
3.90
-
-
0.153
-
-
T5
0
0.18
0.36
0.000
0.007
0.014
θ
0°
10°
12°
0°
10°
12°
ECN: T-08441-Rev. C, 11-Aug-08
DWG: 5946
Notes
Millimeters govern over inches.
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Document Number: 72945
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000