NTTFS4928N Power MOSFET 30 V, 37 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 9.0 mW @ 10 V 30 V 37 A 13.5 mW @ 4.5 V DC−DC Converters Power Load Switch Notebook Battery Management Motor Control N−Channel MOSFET D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 11.8 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.12 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.9 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 85°C 11.5 TA = 25°C PD 3.86 W TA = 25°C ID 7.3 A TA = 85°C 5.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.81 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 37 A Power Dissipation RqJC (Note 1) TC = 25°C PD 20.8 W TA = 25°C, tp = 10 ms IDM 160 A TJ, Tstg −55 to +150 °C IS 20 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 20 Apk, L = 0.1 mH, RG = 25 W) EAS 20 mJ TL 260 °C Pulsed Drain Current S (1,2,3) 8.5 TA = 85°C Steady State G (4) TC = 85°C 27 MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4928 A Y WW G 4928 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Device Package Shipping† NTTFS4928NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS4928NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 2 1 Publication Order Number: NTTFS4928N/D NTTFS4928N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 6 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 59.1 Junction−to−Ambient – Steady State (Note 4) RqJA 154.5 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 32.4 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 24 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.6 3.7 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 5.4 ID = 10 A 5.3 ID = 20 A 8.9 ID = 10 A 8.5 VDS = 1.5 V, ID = 15 A mV/°C 9.0 mW 13.5 40 S 913 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 108 Total Gate Charge QG(TOT) 8.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 366 nC 1.6 3.1 3.1 VGS = 10 V, VDS = 15 V, ID = 20 A 16 nC 9.2 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25.5 14 4.4 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4928N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 6.5 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 21 18 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 125°C 0.76 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 21.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 1.1 V ns 10.5 10.9 QRR 8.4 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.054 1.3 0.9 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 W NTTFS4928N TYPICAL CHARACTERISTICS 4.5 V TJ = 25°C ID, DRAIN CURRENT (A) 80 4.0 V 60 3.5 V 50 40 3.0 V 30 20 VGS = 2.5 V 0 1 2 3 4 30 20 1 2 3 4 5 0.011 0.010 0.009 0.008 0.007 0.006 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.012 0.019 T = 25°C 0.017 0.015 0.013 VGS = 4.5 V 0.011 0.009 0.007 VGS = 10 V 0.005 0.003 10 20 30 50 40 60 70 80 90 100 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.7 ID = 20 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 50 40 Figure 1. On−Region Characteristics 0.013 1.5 TJ = 125°C VDS = 10 V 60 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 20 A 1.6 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.014 3 80 70 10 0 5 0.015 0.005 0.004 TJ = −55°C 90 70 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 100 10 V 90 ID, DRAIN CURRENT (A) 100 1.4 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 1,000 100 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4928N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V Ciss 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 800 600 Coss 400 Crss 200 0 0 5 10 15 20 25 30 7 6 5 Qgd Qgs 4 TJ = 25°C 3 VGS = 10 V VDD = 15 V ID = 20 A 2 1 0 0 2 4 6 8 10 12 14 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 10 V VDD = 15 V ID = 15 A IS, SOURCE CURRENT (A) t, TIME (ns) 8 Qg, TOTAL GATE CHARGE (nC) td(off) tf tr td(on) 10 1 10 16 VGS = 0 V 25 TJ = 25°C 20 15 10 5 0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0 V < VGS < 20 V Single Pulse TC = 25°C 10 ms 100 ms 10 1 ms 10 ms 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) QT 9 30 100 100 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 100 22 ID = 20 A 20 18 16 14 12 10 8 6 4 2 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 1.0 15 NTTFS4928N TYPICAL CHARACTERISTICS 100 D = 0.5 r(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTTFS4928N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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