NTTFS4840N Power MOSFET 30 V, 26 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • • DC−DC Converters Point of Load Power Load Switch Notebook Battery Management Motor Control http://onsemi.com V(BR)DSS RDS(on) MAX 24 mW @ 10 V 30 V N−Channel MOSFET Parameter Drain−to−Source Voltage Gate−to−Source Voltage D (5−8) Symbol Value Unit VDSS 30 V VGS ±20 V ID 7.3 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.2 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 10.3 A Continuous Drain Current RqJA (Note 2) TA = 85°C S (1,2,3) 7.5 TA = 25°C PD 4.4 W TA = 25°C ID 4.6 A TA = 85°C 3.3 TA = 25°C PD 0.84 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 26 A Power Dissipation RqJC (Note 1) TC = 25°C PD 27.8 W TA = 25°C, tp = 10 ms IDM 77 A TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) 19 TJ, Tstg −55 to +150 °C IS 23 A dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 18.3 Apk, L = 0.1 mH, RG = 25 W) EAS 16.7 mJ TL 1 S S S G WDFN8 (m8FL) CASE 511AB 4840 A Y WW G 4840 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Drain to Source dV/dt Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM 1 Power Dissipation RqJA (Note 2) Pulsed Drain Current G (4) 5.3 TA = 85°C Steady State 26 A 36 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Power Dissipation RqJA ≤ 10 s (Note 1) ID MAX 260 °C ORDERING INFORMATION Device Package Shipping† NTTFS4840NTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS4840NTWG WDFN8 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 1 1 Publication Order Number: NTTFS4840N/D NTTFS4840N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 4.5 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 57.5 Junction−to−Ambient – Steady State (Note 4) RqJA 149.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 28.7 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 17 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) 5.6 VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance gFS 1.5 ID = 20 A 15 ID = 10 A 15 ID = 20 A 28 ID = 10 A 25 VDS = 1.5 V, ID = 20 A mV/°C 24 mW 36 22 S 580 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Charge QG(TOT) 5.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 140 nC 0.75 2.2 2.8 VGS = 10 V, VDS = 15 V, ID = 20 A 10.8 nC 10.5 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 38.2 11.5 2.6 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4840N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 6.3 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19.4 15.8 1.7 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.96 TJ = 125°C 0.87 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.2 ns 12.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A V 7.7 4.8 QRR 4.4 nC Source Inductance LS 0.66 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.20 1.5 2.0 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 3.0 W NTTFS4840N TYPICAL CHARACTERISTICS 10 V 7.5 V TJ = 25°C ID, DRAIN CURRENT (A) 40 50 VGS = 5 V 4.8 V VDS ≥ 10 V ID, DRAIN CURRENT (A) 50 4.6 V 4.4 V 30 4.2 V 4.0 V 20 3.8 V 3.6 V 10 0 1 0.5 2 1.5 3 2.5 10 0.020 4 5 6 7 8 9 VGS (V) 2.5 2.0 3.0 3.5 10 4.0 0.045 TJ = 25°C 0.04 0.035 VGS = 4.5 V 0.03 0.025 0.02 VGS = 10 V 0.015 0.01 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.5 Figure 2. Transfer Characteristics 0.030 1.5 TJ = 125°C Figure 1. On−Region Characteristics 0.040 1.6 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 20 A TJ = 25°C 3 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.050 0.010 30 0 1.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 3.4 V 3.3 V 3.0 V 3.5 4 40 10,000 VGS = 0 V ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1.4 TJ = 150°C 1000 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 100 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4840N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 900 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 800 700 Ciss 600 500 400 300 Coss 200 100 0 Crss 0 5 10 15 20 30 25 7 6 5 Qgd Qgs 4 3 TJ = 25°C VDD = 15 V VGS = 10 V ID = 20 A 2 1 0 0 1 2 3 4 5 6 7 8 9 10 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 11 20 IS, SOURCE CURRENT (A) td(off) tr tf td(on) 10 1 10 5 VGS = 0 V TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 10 100 ms 1 ms 1 0.01 0.1 10 RG, GATE RESISTANCE (W) 100 0.1 15 0 0.4 100 10 ms VGS = 20 V Single Pulse TC = 25°C dc RDS(on) Limit Thermal Limit Package Limit 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V ID, DRAIN CURRENT (A) QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 100 18 ID = 18.3 A 16 14 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4840N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTTFS4840N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.20 C 8 7 6 5 4X E1 E 1 2 3 4 q c TOP VIEW A1 0.10 C A 0.10 C e SIDE VIEW 0.10 8X b C A B 0.05 c L C 6X DETAIL A SEATING PLANE DETAIL A INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 −−− 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 12 _ SOLDERING FOOTPRINT* 8X 0.42 e/2 1 4 E2 0.65 PITCH PACKAGE OUTLINE K 4X 0.66 M 5 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 −−− −−− 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ D2 L1 3.60 BOTTOM VIEW 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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