NTST60100CT D

NTST60100CT,
NTSB60100CT-1,
NTSB60100CT,
NTSJ60100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.36 V at IF = 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
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VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER
RECTIFIERS 60 AMPERES,
100 VOLTS
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Halide Free Devices Available
These are Pb−Free Packages
PIN CONNECTIONS
1
2, 4
3
4
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
3
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
2
TO−220FP
CASE 221AH
D2PAK
CASE 418B
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTST60100CT/D
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current at Rated VR
NTST60100CT, NTSB60100CT−1 and NTSB60100CT
(Rated VR, TC = 115°C) per Device
(Rated VR, TC = 125°C) per Diode
NTSJ60100CT
(Rated VR, TC = 80°C) per Device
(Rated VR, TC = 75°C) per Diode
IF(AV)
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz)
NTST60100CT, NTSB60100CT−1 and NTSB60100CT
(Rated VR, TC = 105°C) per Device
(Rated VR, TC = 120°C) per Diode
NTSJ60100CT
(Rated VR, TC = 65°C) per Device
(Rated VR, TC = 55°C) per Diode
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
250
A
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
A
60
30
30
30
A
120
60
30
30
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
NTST60100CT,
NTSB60100CT−1,
NTSB60100CT
Symbol
Rating
Maximum Thermal Resistance
Junction−to−Case
Per Diode
Per Device
RqJC
NTSJ60100CT
1.10
0.67
Unit
°C/W
3.60
3.17
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Symbol
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
(IF = 20 A, TJ = 25°C)
(IF = 30 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
(IF = 20 A, TJ = 125°C)
(IF = 30 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 80 V, TJ = 25°C)
(VR = 80 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.45
0.52
0.58
0.63
0.73
−
−
0.63
−
0.84
0.36
0.45
0.53
0.58
0.66
−
−
0.58
−
0.70
20
15
500
20
mA
mA
40
30
1000
85
mA
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
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2
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 125°C
10
TA = 150°C
1
TA = 25°C
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TA = 25°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
TA = 150°C
1.E−02
TA = 150°C
1.E−01
TA = 125°C
1.E−03
TA = 125°C
1.E−02
1.E−04
1.E−03
TA = 25°C
1.E−05
0
10
20
30
40
50
60
70
80
90 100
TA = 25°C
1.E−04
0
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
60
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
C, JUNCTION CAPACITANCE (pF)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
TJ = 25°C
1000
100
10
TA = 150°C
0.1
1.0
1.E+00
1.E−06
TA = 125°C
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
20
10
IPK/IAV = 5
TJ = 150°C
50
40
Square Wave
30
DC
20
10
0
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Typical Junction Capacitance
Figure 6. Forward Power Dissipation
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3
40
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
50
120
NTST60100CTG; NTSB60100CT−1; NTSB60100CT
RqJC = 1.1°C/W
DC
40
Square Wave
30
20
10
0
0 10
30
50
70
90
110
130
40
20
0 10
30
50
70
90
110
130
TC, CASE TEMPERATURE (°C)
Figure 7. Current Derating per Diode
Figure 8. Current Derating per Device
150
120
NTSJ60100CTG, RqJC = 3.17°C/W
NTSJ60100CTG, RqJC = 3.6°C/W
DC
40
Square Wave
20
10
0 10
30
100
IF(AV), AVERAGE FORWARD
CURRENT (A)
IF(AV), AVERAGE FORWARD
CURRENT (A)
Square Wave
60
TC, CASE TEMPERATURE (°C)
50
0
DC
80
0
150
60
30
NTST60100CTG; NTSB60100CT−1; NTSB60100CT
RqJC = 0.67°C/W
100
IF(AV), AVERAGE FORWARD
CURRENT (A)
IF(AV), AVERAGE FORWARD
CURRENT (A)
60
50
70
90
110
130
80
60
40
Square Wave
20
0
150
DC
0 10
30
50
70
90
110
130
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 9. Current Derating per Diode
Figure 10. Current Derating per Device
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4
150
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
P(pk)
5%
t1
2%
t2
1%
0.01
0.000001
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1000
t, PULSE TIME (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 11. NTST60100CT, NTSB60100CT−1G and NTSB60100CT Typical Transient Thermal Response
10
50% Duty Cycle
1 20%
10%
5%
0.1
2%
1%
P(pk)
t1
0.01
0.001
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 12. NTSJ60100CTG Typical Transient Thermal Response
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5
10
100
1000
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
ORDERING INFORMATION
Package
Shipping
NTST60100CTG
Device
TO−220AB
(Pb−Free)
50 Units / Rail
NTSB60100CT−1G
I2PAK
(Pb−Free)
50 Units / Rail
NTSB60100CTG
D2PAK
(Pb−Free)
50 Units / Rail
NTSB60100CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
TO−220FP
(Halide−Free, Pb−Free)
50 Units / Rail
NTSJ60100CTG
MARKING DIAGRAMS
AY WW
TS60100Cx
AKA
TO−220AB
AY WW
TS60100CG
AKA
AY WW
TS60100CG
AKA
I2PAK
A
Y
WW
AKA
x
G
H
D2PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
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6
AYWW
TS60100CG
AKA
TO−220FP
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
I2PAK (TO−262)
CASE 418D−01
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
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7
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
M
VARIABLE
CONFIGURATION
ZONE
T B
M
N
R
P
U
L
M
W
H
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
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8
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
Q
SCALE 1:1
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
A
NOTE 6
NOTE 6
H1
D
D
A
SECTION A−A
ALTERNATE CONSTRUCTION
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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NTST60100CT/D