NTST40100CTG, NTSB40100CT-1G, NTSB40100CTG, NTSJ40100CTG Very Low Forward Voltage Trench-based Schottky Rectifier www.onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.38 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 4 1 2 3 Typical Applications • • • • 1 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 12 3 I2PAK CASE 418D STYLE 3 4 • Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation TO−220AB CASE 221A STYLE 6 4 2 TO−220FP CASE 221AH D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. 10 sec © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 1 1 Publication Order Number: NTST40100CT/D NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 120°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 40 20 IFRM A 60 30 IFSM 250 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient Symbol NTST40100CTG, NTSB40100CT−1G NTSB40100CTG NTSJ40100CTG Unit RqJC RqJA 1.3 70 0.79 46.3 4.0 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 20 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) (IF = 20 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.46 0.56 0.71 − − 0.80 0.41 0.52 0.63 − − 0.68 12 8.0 20 20 Unit V mA mA 1000 45 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% www.onsemi.com 2 NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG TYPICAL CHARACTERISTICS 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) TA = 150°C TA = 25°C 10 TA = 125°C 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 0.1 1 10 50 60 70 80 90 100 40 100 RqJC = 1.3°C/W 35 DC 30 25 Square Wave 20 15 10 5 0 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg 80 RqJC = 1.3°C/W 70 DC 60 Square Wave 40 30 20 10 0 40 Figure 2. Typical Reverse Characteristics 100 0 30 Figure 1. Typical Instantaneous Forward Characteristics 1000 50 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 10 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 20 40 60 80 100 120 18 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) C, JUNCTION CAPACITANCE (pF) TA = 125°C 10 0.001 1.1 10,000 IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150°C 0.01 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 140 20 16 IPK/IAV = 5 10 14 Square Wave 12 10 DC 8 6 4 2 0 TJ = 150°C 0 2 4 6 8 10 12 14 16 18 20 22 24 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 140 NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response for NTST40100CT and NTSB40100CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response for NTSJ40100CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response for NTSB40100CTG www.onsemi.com 4 NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG ORDERING INFORMATION Package Shipping† NTST40100CTG TO−220AB (Pb−Free) 50 Units / Rail NTSB40100CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSB40100CTG D2PAK (Pb−Free) 50 Units / Rail NTSB40100CTT4G D2PAK (Pb−Free) 800 / Tape & Reel TO−220FP (Halide−Free) 50 Units / Rail Device NTSJ40100CTG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS AY WW TS40100Cx AKA TO−220AB AY WW TS40100CG AKA AY WW TS40100CG AKA I2PAK A Y WW AKA x G H D2PAK = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package www.onsemi.com 5 AYWW TS40100CG AKA TO−220FP NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M www.onsemi.com 6 INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D M VARIABLE CONFIGURATION ZONE T B M N R P U L M W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 www.onsemi.com 7 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A E B P E/2 0.14 Q D SCALE 1:1 B A A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X M SEATING PLANE b2 c b 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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