MIAA20WD600TMH

Advanced Technical Information
Converter - Inverter Module
NPT IGBT
MIAA20WD600TMH
Single Phase
Rectifier
Three Phase
Inverter
VRRM =1600 V
VCES =600 V
IDAVM25=
IC25
IFSM
65 A
= 550 A
= 29 A
VCE(sat)= 2.1 V
Part name (Marking on product)
MIAA20WD600TMH
P
D8
P1
T1
D10
T3
T5
D1
NTC1
G1
G3
L1
G5
U
L2
D11
W
V
T2
D9
D5
D3
T6
T4
D2
NTC2
G4
G2
D6
D4
E 72873
G6
Pin configuration see outlines.
N
EU
EV
EW
Features:
Application:
Package:
•High level of integration - only one power semiconductor module required
for the whole drive
•Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
•Epitaxial free wheeling diodes with
hiperfast soft reverse recovery
•Temperature sense included
•AC motor drives
•Pumps, Fans
•Washing machines
•Air-conditioning system
•Inverter and power supplies
•"Mini" package
•Assembly height is 17 mm
•Insulated base plate
•Pins suitable for wave soldering and PCB mounting
•Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
•UL registered E72873
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070531a
-7
Advanced Technical Information
MIAA20WD600TMH
Ouput Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
VCES
collector emitter voltage
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient IC25
IC80
collector current
Ptot
total power dissipation
VCE(sat)
max.
Unit
600
V
±20
±30
V
V
TC = 25°C
TC = 80°C
29
20
A
A
TC = 25°C
100
W
collector emitter saturation voltage
IC = 20 A; VGE = 15 V
TVJ= 25°C
TVJ=125°C
2.1
2.4
2.7
V
V
VGE(th)
gate emitter threshold voltage
IC = 0.5 A; VGE = VCE
TVJ= 25°C
5.5
6.5
V
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
TVJ=125°C
1.1
mA
mA
IGES
gate emitter leakage current
VGE = ±20 V
150
nA
Cies
input capacitance
VCE = 25 V; VGE = 0 V; f = 1 MHz
QG(on)
total gate charge
VCE = 300 V; VGE = 15 V; IC = 20 A
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W
RBSOA
reverse bias safe operating area
VGE = ±15 V; RG = 47 W; IC = 40 A TVJ=125°C
VCEK < VCES-LS·dI /dt
V
ISC
(SCSOA)
short circuit safe operating area
VCE = 360 V; VGE = ±15 V;
TVJ = 125°C
RG = 47 W; tp = 10 µs; non-repetitive
90
A
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
inductive load
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W
min.
typ.
TVJ=150°C
4.5
1.3
TVJ= 25°C
TVJ=125°C
900
pF
76
nC
35
45
155
75
0.39
0.4
ns
ns
ns
ns
mJ
mJ
35
45
165
150
0.6
0.54
ns
ns
ns
ns
mJ
mJ
1.3
K/W
K/W
max.
Unit
0.45
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
VRRM
max. repetitve reverse voltage
TVJ=150°C
600
V
IF25
IF80
forward current
TC = 25°C
TC = 80°C
37
24
A
A
VF
forward voltage
IF = 20 A; VGE = 0 V
TVJ= 25°C
TVJ=125°C
1.95
1.65
2.2
V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
TVJ=125°C
0.58
10.7
110
60
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
VR = 300 V
diF /dt = -370 A/µs
IF = 20 A; VGE = 0 V
min.
typ.
(per diode)
µC
A
ns
µJ
1.6
0.55
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070531a
-7
Advanced Technical Information
MIAA20WD600TMH
Input Rectifier Bridge D8 - D11
Ratings
typ. max.
Unit
TVJ= 25°C
1600
V
TC = 80°C
TC = 80°C
39
42
A
A
t = 10 ms; sine 50 Hz
TVJ= 25°C
TVJ=125°C
550
tbd
A
A
I2t value for fusing
t = 10 ms; sine 50 Hz
TVJ= 25°C
TVJ=125°C
1270
tbd
A2s
A2s
Ptot
total power dissipation
TC = 25°C
100
W
VF
forward voltage
IF = 30 A
TVJ= 25°C
TVJ=125°C
1.2
1.3
1.5
V
V
IR
reverse current
VR = VRRM
TVJ= 25°C
TVJ=125°C
0.03
0.3
mA
mA
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
1.2
K/W
K/W
Symbol
Definitions
Conditions
VRRM
max. repetitive reverse voltage
IFAV
IDAVM
average forward current
max. average DC output current
sine 180°
rect.; d = ½
IFSM
max. forward surge current
I2t
min.
(per diode)
(per diode)
0.4
Temperature Sensor NTC
Symbol
Definitions
Conditions
R25
B25/50
resistance
Symbol
Definitions
Conditions
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
VISOL
isolation voltage
CTI
comparative tracking index
FC
mounting force
dS
dA
creep distance on surface
strike distance through air
min.
TC = 25°C
4.75
Ratings
typ. max.
5.0
3375
5.25
Unit
kW
K
Module
min.
Ratings
typ. max.
Unit
125
150
125
°C
°C
°C
2500
V~
80
N
-40
-40
IISOL < 1 mA; 50/60 Hz
40
12.7
12
Weight
mm
mm
35
g
Equivalent Circuits for Simulation
I
V0
R0
min.
Ratings
typ. max.
Symbol
Definitions
Conditions
V0
R0
rectifier diode
D8 - D11
TVJ=125°C
0.9
6
Unit
V
mW
V0
R0
IGBT
T1 - T6
TVJ=125°C
1.7
40
V
mW
V0
R0
free wheeling diode
D1 - D6
TVJ=125°C
1.25
12
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070531a
-7
MIAA20WD600TMH
Advanced Technical Information
Circuit Diagram
P
D8
P1
T1
D10
T3
T5
D1
NTC1
G1
G3
L1
G5
T2
D9
D11
T6
T4
D2
NTC2
EU
G6
EV
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
48,26
44,45
35,56
31,75
27,94
26,37
2
0,5
8,5 ±0,35
A
20,5 ±0,50
EW
4
Ø4
7 ±0,35
D6
D4
G4
G2
N
W
V
U
L2
D5
D3
55,9
40,6
45,6
39,6
23
26,6
24,13
20,32
16,51
2,4
25,6
2
2,2
,2
A (2:)
0,635
EW
P
P
Ø 0.4
N
G6
EV
G4
EU G2
NTC1
L1 L1
L2 L2
NTC2
N
,4
,8
G1 U
G3 V
Pin positions with tolerance
3,6
17,78
10,16
31,75
22,86
19,05
P1
G5
W
Product Marking
Part number
M= Module
I= IGBT
A= IGBT (NPT)
A= Gen 1 / std
20= Current Rating [A]
WD= 6-Pack + 1~ Rectifier Bridge
600= Reverse Voltage [V]
T= NTC
MH= MiniPack2
Ordering
Part Name
Standard
MIAA 20 WD 600 TMH
Marking on Product Delivering Mode Base Qty Ordering Code
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Box
20
504975
20070531a
-7
MIAA20WD600TMH
Advanced Technical Information
30
Vge= 19V
28
125 °C
Vge= 17V
26
26
24
24
22
22
Vge= 11V
20
20
Vge= 9V
18
18
16
16
Ic [A]
Ic [A]
30
25 °C
28
14
Vge= 15V
Vge= 13V
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.0
3.6
0.5
1.0
1.5
Typical output characteristics, VGE = 15 V
2.5
3.0
3.5
4.0
Typical output characteristics (125°C)
30
30
25 °C
28
25 °C
28
125 °C
26
125 °C
26
24
24
22
22
20
20
18
18
16
16
If [A]
Ic [A]
2.0
Vce [V]
Vce [V]
14
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
5
6
7
8
9
10
11
12
13
14
Vge [V]
Typical transfer characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Vf [V]
Typical forward characteristics of freewheeling diode
20070531a
-7
MIAA20WD600TMH
Advanced Technical Information
2
18
Ic = 15A
Vce = 300V
17
16
Eon
1.8
Erec
15
1.6
14
13
Vce = 300V
Vge = +/-15V
Rg = 68W
Tvj = 125°C
1.4
12
11
1.2
10
E [mJ]
Vge [[V]
Eoff
9
8
1
0.8
7
6
0.6
5
4
0.4
3
2
0.2
1
0
0
5
10 15 20 25 30
35 40 45 50 55 60 65 70
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Ic, If [A]
Qg [nC]
Typical turn on gate charge
Typical switching energy versus collector current
1.4
12
Eon
1.3
11.5
Eoff
1.2
Ic, If = 15A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
1
0.9
175
68 W
170
165
Irr [A]
0.7
180
If = 15A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
10.5
0.8
E [mJ]
trr
330 W
11
Erec
1.1
Irr
10
160
9.5
155
9
150
8.5
145
150 W
0.6
8
0.5
7.5
135
0.4
7
130
0.3
6.5
125
0.2
6
0.1
5.5
0
50
75
100 125 150 175 200 225 250 275 300 325 350
Rg [W ]
Typical switching energy versus gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
140
68 W
330 W
trr [ns]
0
120
115
5
100
150
200
250
300
350
110
400
dif/dt [A/µs]
Typical turn-off characteristics of free wheeling diode
20070531a
-7
MIAA20WD600TMH
Advanced Technical Information
0.7
100000
0.65
0.6
0.55
0.5
10000
0.4
Rnom [ W ]
Qrr [µC]
0.45
0.35
0.3
0.25
1000
0.2
0.15
Vce = 300V
Vge = +/-15V
Rg = 68W
Tvj = 125°C
0.1
0.05
100
0
0
5
10
15
20
25
30
35
If [A]
Typical turn-off characteristics of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
0
25
50
75
100
125
150
T [°C]
Typical thermistor resistance versus temperature
20070531a
-7