Preliminary Technical Information PolarTM VCES = = ICP VCE(sat) ≤ IXGQ90N27PB IGBT for PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM TO-3P 270 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICPEAK I C(RMS) TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% Lead current limit 340 75 A A SSOA VGE = 15 V, TVJ = 150°C, RG = 20 Ω ICM = 90 A (RBSOA) Clamped inductive load, VCE < 270 V PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.3/10 Nm/lb.in. 5.5 g TJ TJM Tstg TL TSOLD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum plastic body temperature for 10 S Md Mounting torque Weight 270 V 340 A 2.1 V G C E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features • International standard package • Low VCE(sat) • - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications • Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 1 mA, VCE = VGE ICES VCE = 270 V VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3.0 5.5 V 1 μA 200 μA TJ = 125°C ±100 nA IC = 50 A TJ = 125°C IC = 100 A TJ = 125°C © 2006 IXYS All rights reserved PDP Screen Drivers 1.3 2.1 V 1.3 V 1.67 V 1.80 V DS99609B(02/07) IXGQ90N27PB Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 45 A, VCE = 10 V, Note 1 30 48 S 2750 pF 180 pF Cres 48 pF Qg 79 nC 16 nC 29 nC 21 ns 43 ns 82 ns Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 45 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) Resistive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 200 V, RG = 5 Ω tfi 170 td(on) tri td(off) tfi Resistive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 200 V, RG = 5 Ω 350 ns 21 ns 68 ns 88 ns 340 ns RthJC 0.833 K/W RthCS 0.25 K/W Note 1: Pulse test, t < 300 us, duty cycle < 2% TO-3P Outline PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXGQ90N27PB Fig. 1. Output Characteristics @ 25ºC Fig. 2. Exteded Output Characteristics @ 25ºC 180 V GE = 15V 13V 11V 160 140 250 120 IC - Amperes IC - Amperes V GE = 15V 13V 300 100 9V 80 60 11V 200 150 9V 100 40 50 7V 20 7V 0 0 0 0.5 1 1.5 2 2.5 0 3 1 2 3 4 Fig. 3. Output Characteristics @ 125ºC 6 7 8 9 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.7 180 V GE = 15V 13V 11V 160 1.5 V CE(sat) - Normalized 120 100 9V 80 60 40 V GE = 15V 1.6 140 IC - Amperes 5 V CE - Volts V CE - Volts I C = 180A 1.4 1.3 1.2 I C = 90A 1.1 1 0.9 7V I C = 45A 20 0.8 0.7 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage v s. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 200 180 TJ = 25ºC 4.5 160 140 I C = 180A 90A 45A 3.5 IC - Amperes V CE - Volts 4.0 3.0 2.5 120 100 80 60 2.0 TJ = 125ºC 25ºC - 40ºC 40 1.5 20 1.0 0 6 7 8 9 10 11 V GE - Volts © 2006 IXYS All rights reserved 12 13 14 15 4 5 6 7 V GE - Volts 8 9 10 IXGQ90N27PB Fig. 8. Resistiv e Turn-On Rise Time v s. Junction Temperature Fig. 7. Transconductance 70 110 RG = 5Ω 60 V GE = 15V 100 I C = 90A V CE = 240V t r - Nanoseconds g f s - Siemens 50 40 TJ = - 40ºC 25ºC 125ºC 30 20 90 80 70 60 I C = 45A 10 50 0 40 0 25 50 75 100 125 150 175 200 25 35 45 55 I C - Amperes Fig. 9. Resistiv e Turn-On Rise Time v s. Collector Current 75 85 95 105 115 160 RG = 5Ω 100 26 td(on) - - - - tr 150 V GE = 15V 125 Fig. 10. Resistiv e Turn-On Switching Times v s. Gate Resistance 110 TJ = 125ºC, V GE = 15V TJ = 125ºC 140 t r - Nanoseconds 70 60 TJ = 25ºC 120 24 110 100 23 I C = 90A 90 I C = 45A 80 - Nanoseconds 80 130 d(on) 90 25 V CE = 200V t V CE = 200V t r - Nanoseconds 65 T J - Degrees Centigrade 22 50 70 40 60 45 50 55 60 65 70 75 80 85 21 90 4 6 8 10 I C - Amperes 450 RG = 5Ω , V GE = 15V 74 t f - Nanoseconds 200 360 95 TJ = 125ºC 320 90 280 85 240 80 200 I C = 90A 70 100 35 45 55 65 75 85 95 105 115 66 125 100 75 TJ = 25ºC 160 70 120 T J - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. 65 20 30 40 50 60 I C - Amperes 70 80 90 - Nanoseconds 78 V CE = 200V d(off) 250 105 t 82 - Nanoseconds 300 d(off) 86 td(off) - - - - RG = 5Ω , V GE = 15V 400 t t f - Nanoseconds 440 90 I C = 45A 350 25 20 110 tf 150 18 480 94 V CE = 200V 16 Fig. 12. Resistiv e Turn-Off Switching Times v s. Collector Current td(off) - - - - tf 14 R G - Ohms Fig. 11. Resistiv e Turn-Off Switching Times v s. Junction Temperature 400 12 IXGQ90N27PB Fig. 13. Resistiv e Turn-Off Switching Times v s. Gate Resistance Fig. 14. Gate Charge 440 180 400 160 16 V CE = 150V 14 120 280 100 td(off) - - - - tf TJ = 125ºC, V GE = 15V V GE - Volts I C = 90A 320 - Nanoseconds t f - Nanoseconds 140 10 12 14 6 4 60 8 8 2 200 6 10 80 V CE = 200V 4 I G = 10 mA 12 d(off) 360 240 I C = 45A t I C = 45A 16 18 0 0 20 10 20 R G - Ohms Fig. 15. Rev erse-Bias Safe Operating Area 40 50 60 70 80 35 40 Fig. 16. Capacitance 10,000 100 f = 1 MHz 90 Capacitance - PicoFarads 80 70 IC - Amperes 30 Q G - NanoCoulombs 60 50 40 30 TJ = 150ºC 20 C ies 1,000 C oes 100 RG = 20 Ω dV / dT < 10V / ns 10 C res 10 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 V CE - Volts V CE - Volts Fig. 17. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10