WILLAS FM120-M+ THRU SE9435LT1 FM1200-M+ 30V P-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. V = -30V DS power loss, high efficiency. • Low , Vcapability, 70mΩ R current lowIforward voltage=drop. • High DS(ON) gs@-10V, [email protected] • High surge capability. RDS(ON), [email protected], [email protected] = 100mΩ for overvoltage protection. • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free Features 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Advanced trench process technology product for packing code suffix "G" • RoHS Halogen free product for packing codeLow suffix "H" High Density Cell Design For Ultra On-Resistance Mechanical data Improved Shoot-Through FOM SOT-23 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded plastic,is SOD-123H • Case Pb-Free package available , • Terminals :Plated terminals, per ”G” MIL-STD-750 RoHS product for packingsolderable code suffix 3 0.031(0.8) Typ. Method 2026 Halogen free product for packing code suffix “H” • Polarity : Indicated by cathode band • Mounting Position : Any ▼ Simple Drive Requirement • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) G 1 2 ▼ Small Package Outline MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS D S Surface Mount Device Ratings at ▼ 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage Ordering Information Maximum RMS Voltage Device Maximum DC Blocking Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts 20 30 Shipping 40 50 60 80 100 150 200 Volts Marking VDC SE9435LT1 Maximum Average Forward Rectified Current P94 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO 3000/Tape&Reel IFSM 1.0 30 Amps Amps 40 RΘJA o Maximum Ratings and ThermalCCharacteristics noted) (TA = 25 C unless otherwise 120 J -55 to +125 -55 to +150 Operating Temperature Range T J Symbol Parameter Limit ℃/W Typical Thermal Resistance (Note 2) PF Typical Junction Capacitance (Note 1) Storage Temperature Range VDS - 65 to +175 TSTG Drain-Source Voltage ℃ -30 V FM1150-MH FM1200-MH VGS CHARACTERISTICS ± 20 Gate-Source SYMBOL VoltageFM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH Maximum Forward Voltage at 1.0A DC ID VF Continuous Drain Current Maximum Average Reverse Current at @T A=25℃ IDM Rated DC Blocking Voltage IR Pulsed Drain Current @T A=125℃ 0.50 NOTES: PD Maximum Power Dissipation 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient TJ, Tstg 0.70 0.85 0.5 1) ℃ Unit 10 A 1.4 o TA = 75 C 0.8 o -55 to 150 50 Junction-to-Ambient Thermal Resistance (PCB mounted) UNIT Volts mAmps W Junction-to-Case Thermal Resistance RθJA 0.92 -20 o TA = 25 C Operating Junction and Storage Temperature Range RθJC -5.3 0.9 2) 90 o C C/W Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2012-06 2012-10 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE9435LT1 FM1200-M+ 30V P-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features ELECTRICAL CHARACTERISTICS design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. surface mounted application in order to • Low profile Symbol Parameter optimize board space. • Low power loss, high efficiency. Static • High current capability, low forward voltage drop. BVDSS Drain-Source Breakdown Voltage • High surge capability. for overvoltage protection. • Guardring RDS(on) Drain-Source On-State Resistance • Ultra high-speed switching. RDS(on) Drain-Source planar On-State chip, metalResistance silicon junction. • Silicon epitaxial parts meet environmental • Lead-free VGS(th) Gate Threshold Voltage standards of MIL-STD-19500 /228 RoHS product packing codeDrain suffix "G" I•DSS Zero for Gate Voltage Current Halogen free product for packing code suffix "H" IGSS Gate Body Leakage Mechanical data SOD-123H Test Condition Min Typ VGS = 0V, ID = -250uA V VGS = -4.5V, ID = -4.2A Qgs VGS = -10V, ID = -5.3A -1 VGS = ± 20V, VDS = 0V V 1 uA ±100 nA 0.040(1.0) 0.024(0.6) 10 mΩ -3 VDS = -24V, VGS = 0V S 0.031(0.8) Typ. 28 nC 3 Dimensions in inches and (millimeters) 7 9 15 ns 75 40 For capacitive load, derate current by 20% Input Capacitance RATINGS 70.0 -1.7 VDD = -15V, RL = 15Ω tr Turn-On Rise Time AND ELECTRICAL MAXIMUM RATINGS -1A, VGEN = -10V ID =CHARACTERISTICS td(off) Ratings at 25℃ ambient temperature unless otherwise specified. R = 6 Turn-Off Delay Time G Single phase half wave, 60Hz, resistive of inductive load. tf Turn-Off Fall Time Ciss 0.071(1.8) 0.056(1.4) 50.0 VDS =-15V, ID = -5.3A VGS = -10V Charge • Polarity Gate-Source : Indicated by cathode band Q Gate-Drain Charge Mounting Position : Any • gd • Weight :Turn-On Approximated td(on) Delay0.011 Timegram 100.0 70.0 VDS =VGS, ID = -250uA Unit 0.012(0.3) Typ. -30 VDS = -10V, ID = -5.3A Forward rated Transconductance flame retardant •gfsEpoxy : UL94-V0 Molded plastic, SOD-123H • Case : 3) Dynamic 0.031(0.8) Typ. , •QTerminals :Plated terminals, solderable per MIL-STD-750 Total Gate Charge g Method 2026 Max 0.146(3.7) 0.130(3.3) 745 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 16 60 18 440 10 80 100 115 150 120 pF VRRM VDS = -15V, VGS = 0V 12 13 14 15 f = 1.0 30 MHz 40 20 50 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Source-Drain Diode Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts MaximumISAverage Forward Rectified Current Current Max. Diode Forward IO IFSM MarkingCCode oss Output Capacitance Maximum Recurrent Peak Reverse Voltage Crss Reverse Transfer Capacitance VSD Surge Diode Forward Peak Forward Current 8.3 ms singleVoltage half sine-wave superimposed rated load pulse (JEDEC method) NoteonPulse : test: width <= 300us, duty cycle<= 2% RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 120 1.0 30 IS = -2.6A, VGS = 0V 40 120 -55 to +125 -2.6 -1.3 Amps A V Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE9435LT1 FM1200-M+ 30V P-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline TYPICAL ELECTRICAL CHARACTERISTICS Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE9435LT1 FM1200-M+ 30V P-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .080(2.04) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .004(0.10)MAX. 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .020(0.50) .012(0.30) .055(1.40) .035(0.89) .086(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Halogen free product for packing code suffix "H" Mechanical data 1.0 30 40 120 CJ -55 to +125 TJ Dimensions in inches and (millimeters) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.037 @T A=125℃ 0.50 IR 0.037 0.95 0.95 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.079 2.0 0.035 0.9 2012-06 2012-10 0.031 0.8 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. 30V P-Channel Enhancement-Mode MOSFET SE9435LT1 Ordering Information: Device PN SE9435LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.