SE9435LT1(SOT 23)

WILLAS
FM120-M+
THRU
SE9435LT1
FM1200-M+
30V
P-Channel
Enhancement-Mode
MOSFET
1.0A
SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
V = -30V
DS
power loss, high efficiency.
• Low
, Vcapability,
70mΩ
R
current
lowIforward
voltage=drop.
• High
DS(ON)
[email protected],
[email protected]
• High surge capability.
RDS(ON), [email protected], [email protected] = 100mΩ
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
Features
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Advanced
trench
process
technology
product
for packing
code
suffix "G"
• RoHS
Halogen
free product
for packing
codeLow
suffix
"H"
High Density
Cell Design
For Ultra
On-Resistance
Mechanical
data
Improved Shoot-Through FOM
SOT-23
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
: Molded
plastic,is
SOD-123H
• Case
Pb-Free
package
available
,
• Terminals
:Plated
terminals,
per ”G”
MIL-STD-750
RoHS product for packingsolderable
code suffix
3
0.031(0.8) Typ.
Method 2026
Halogen free
product for packing code suffix “H”
• Polarity : Indicated by cathode band
• Mounting Position : Any
▼ Simple
Drive Requirement
• Weight
: Approximated
0.011 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
G
1
2
▼ Small
Package
Outline
MAXIMUM
RATINGS
AND ELECTRICAL CHARACTERISTICS
D
S
Surface
Mount Device
Ratings at ▼
25℃
ambient temperature
unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Ordering Information
Maximum RMS Voltage
Device
Maximum DC Blocking
Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
VRMS
14
21
28
35
42
56
70
105
140
Volts
20
30
Shipping
40
50
60
80
100
150
200
Volts
Marking VDC
SE9435LT1
Maximum Average
Forward Rectified Current P94
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO 3000/Tape&Reel
IFSM
1.0
30
Amps
Amps
40
RΘJA
o
Maximum Ratings and ThermalCCharacteristics
noted)
(TA = 25 C unless otherwise
120
J
-55
to
+125
-55
to +150
Operating Temperature
Range
T
J
Symbol
Parameter
Limit
℃/W
Typical Thermal Resistance (Note 2)
PF
Typical Junction Capacitance (Note 1)
Storage Temperature Range
VDS
- 65 to +175
TSTG
Drain-Source Voltage
℃
-30
V
FM1150-MH FM1200-MH
VGS
CHARACTERISTICS
± 20
Gate-Source SYMBOL
VoltageFM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
Maximum Forward Voltage at 1.0A DC
ID
VF
Continuous Drain Current
Maximum Average Reverse Current at @T A=25℃
IDM
Rated DC Blocking
Voltage
IR
Pulsed
Drain Current
@T A=125℃
0.50
NOTES:
PD
Maximum Power Dissipation
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
TJ, Tstg
0.70
0.85
0.5
1)
℃
Unit
10
A
1.4
o
TA = 75 C
0.8
o
-55 to 150
50
Junction-to-Ambient Thermal Resistance (PCB mounted)
UNIT
Volts
mAmps
W
Junction-to-Case Thermal Resistance
RθJA
0.92
-20
o
TA = 25 C
Operating Junction and Storage Temperature Range
RθJC
-5.3
0.9
2)
90
o
C
C/W
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2
2012-06
2012-10
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SE9435LT1
FM1200-M+
30V
P-Channel
Enhancement-Mode
MOSFET
1.0A
SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS
-20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
ELECTRICAL
CHARACTERISTICS
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
surface mounted application in order to
• Low profile
Symbol
Parameter
optimize board space.
• Low power loss, high efficiency.
Static
• High current capability, low forward voltage drop.
BVDSS
Drain-Source Breakdown Voltage
• High surge capability.
for overvoltage
protection.
• Guardring
RDS(on)
Drain-Source
On-State
Resistance
• Ultra high-speed switching.
RDS(on)
Drain-Source
planar On-State
chip, metalResistance
silicon junction.
• Silicon epitaxial
parts
meet environmental
• Lead-free
VGS(th)
Gate
Threshold
Voltage standards of
MIL-STD-19500 /228
RoHS product
packing
codeDrain
suffix "G"
I•DSS
Zero for
Gate
Voltage
Current
Halogen free product for packing code suffix "H"
IGSS
Gate Body Leakage
Mechanical
data
SOD-123H
Test Condition
Min
Typ
VGS = 0V, ID = -250uA
V
VGS = -4.5V, ID = -4.2A
Qgs
VGS = -10V, ID = -5.3A
-1
VGS = ± 20V, VDS = 0V
V
1
uA
±100
nA
0.040(1.0)
0.024(0.6)
10
mΩ
-3
VDS = -24V, VGS = 0V
S
0.031(0.8) Typ.
28
nC
3
Dimensions in inches and (millimeters)
7
9
15
ns
75
40
For capacitive load, derate current by 20%
Input
Capacitance
RATINGS
70.0
-1.7
VDD = -15V, RL = 15Ω
tr
Turn-On Rise
Time AND ELECTRICAL
MAXIMUM
RATINGS
-1A, VGEN = -10V
ID =CHARACTERISTICS
td(off)
Ratings
at 25℃ ambient
temperature
unless otherwise specified. R = 6
Turn-Off
Delay Time
G
Single phase half wave, 60Hz, resistive of inductive load.
tf
Turn-Off Fall Time
Ciss
0.071(1.8)
0.056(1.4)
50.0
VDS =-15V, ID = -5.3A
VGS = -10V
Charge
• Polarity Gate-Source
: Indicated by cathode band
Q
Gate-Drain
Charge
Mounting
Position : Any
• gd
• Weight :Turn-On
Approximated
td(on)
Delay0.011
Timegram
100.0
70.0
VDS =VGS, ID = -250uA
Unit
0.012(0.3) Typ.
-30
VDS = -10V, ID = -5.3A
Forward rated
Transconductance
flame retardant
•gfsEpoxy : UL94-V0
Molded plastic, SOD-123H
• Case : 3)
Dynamic
0.031(0.8) Typ.
,
•QTerminals
:Plated
terminals,
solderable
per
MIL-STD-750
Total Gate Charge
g
Method 2026
Max
0.146(3.7)
0.130(3.3)
745
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
16
60
18 440 10
80
100
115
150
120
pF
VRRM
VDS = -15V, VGS = 0V
12
13
14
15
f = 1.0 30
MHz 40
20
50
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Source-Drain
Diode
Maximum
DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
MaximumISAverage Forward
Rectified
Current Current
Max. Diode
Forward
IO
IFSM
MarkingCCode
oss
Output Capacitance
Maximum Recurrent Peak Reverse Voltage
Crss
Reverse Transfer Capacitance
VSD Surge Diode
Forward
Peak Forward
Current 8.3
ms singleVoltage
half sine-wave
superimposed
rated
load pulse
(JEDEC
method)
NoteonPulse
:
test:
width
<= 300us, duty cycle<= 2%
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
120
1.0
30
IS = -2.6A, VGS = 0V
40
120
-55 to +125
-2.6
-1.3
Amps
A
V
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SE9435LT1
FM1200-M+
30V P-Channel Enhancement-Mode MOSFET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
TYPICAL ELECTRICAL CHARACTERISTICS
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SE9435LT1
FM1200-M+
30V P-Channel Enhancement-Mode MOSFET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
SOT-23
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
• Lead-free parts meet environmental standards of
.106(2.70)
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.080(2.04)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS
AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
.004(0.10)MAX.
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
.086(2.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.110(2.80)
Halogen free product for packing code suffix "H"
Mechanical data
1.0
30
40
120
CJ
-55
to
+125
TJ
Dimensions
in inches and (millimeters)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.037
@T A=125℃
0.50
IR
0.037
0.95
0.95
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
2012-06
2012-10
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
30V P-Channel Enhancement-Mode
MOSFET
SE9435LT1
Ordering Information: Device PN SE9435LT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10
WILLAS ELECTRONIC CORP.