SE3080

WILLAS
SE3080
30V,80A
N-Channel MOSFET
General Description
The SE3080 uses advanced trench
technology and design to provide excellent
RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
Features
● VDS= 30V，ID = 80A
RDS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) < 10mΩ (VGS = 5V)
●
●
●
●
Revision:A
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● RoHS product for packing code suffix "G"
● Halogen free product for packing code suffix "H"
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
80
A
ID（100℃）
50
A
Pulsed Drain Current
IDM
170
A
Total Power Dissipation
PD
83
W
Single pulse avalanche energy（Note 5）
EAS
150
mJ
TJ
-55 to 175
°C
Drain Current Continuous
Drain Current Continuous（Tc=100℃）
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance ,Junction-to-case（Note 2）
2012-07
Symbol
Typ
Max
Units
RθJC
1.8
-
°C/W
WILLAS ELECTRONIC CORP.
WILLAS
Electrical Characteristics
Symbol
SE3080
(TJ=25°C unless otherwise noted)
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0 V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0 V
IGSS
Gate-Body leakage current
VDS=0 V, VGS=±20 V
30
V
1
μA
±100
nA
1.5
3
V
VGS=10V, ID=30A
5.5
7.5
mΩ
VGS=5V, ID=24A
7.5
10
mΩ
ON CHARACTERISTICS (Note 3)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance2
|Yfs|
Forward Transfer Admittance
VDS=VGS ID=250uA
1
VGS = 5 V, IS =24A
20
S
DYNAMIC CHARACTERISTICS (Note 4)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
2330
pF
460
pF
230
pF
20
nS
15
nS
SWITCHING CHARACTERISTICS (Note 4)
td(on)
Turn-on Delay Time
VDD=10V,ID=30A
VGS=10V,RGEN=2.7Ω
tr
Turn-on Rise Time
td(0ff)
Turn-off Delay Time
60
nS
tf
Turn-off fall Time
10
nS
Qg
Total Gate Charge
51
nC
Qgs
Gate-Source Charge
14
nC
Qgd
Gate-Drain Charge
11
nC
VDD=10V,ID=30A
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage(Notes 3)
IS
Diode Forward Current(Notes 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS=24A
TJ=25℃,IF=80A
di/dt=100A/μS(Note 3)
1.2
V
80
A
32
50
nS
12
20
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω
2012-07
WILLAS ELECTRONIC CORP.
WILLAS
SE3080
Test circuit
1
EAS test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
2012-07
WILLAS ELECTRONIC CORP.
WILLAS
SE3080
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
2012-07
WILLAS ELECTRONIC CORP.
WILLAS
2012-07
SE3080
WILLAS ELECTRONIC CORP.