XINDEYI UM3203

UM3203
Dual P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3203 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM3203 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
-30V
25m
ID
-6.5A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Load Switch
SOP8 Pin Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Sou ce Voltage
[email protected]=25
[email protected]=70
IDM
20
V
1
-6.5
A
1
-5.2
A
-26
A
Continuous Drain Current, -VGS @ -10V
Continuous Drain Current, -VGS @ -10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
176
mJ
IAS
Avalanche Current
-38
A
Total Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
[email protected]=25
4
Thermal Data
Symbol
R
R
JA
JC
Parameter
Typ.
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
1
1
1
Max.
Unit
---
85
/W
---
25
/W
UM3203
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
BVDSS
BVDSS
RDS(ON)
VGS(th)
, unless otherwise noted)
Parameter
Conditions
Drain-Source Breakdown Voltage
TJ BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
Reference to 25
---
-0.022
---
VGS=-10V , ID=-6A
---
20
25
VGS=-4.5V , ID=-4A
---
32
42
-1.0
-1.5
-2.5
---
4.6
---
VDS=-24V , VGS=0V , TJ=25
---
---
-1
VDS=-24V , VGS=0V , TJ=55
---
---
-5
20V , VDS=0V
---
---
100
nA
S
, ID=-1mA
VGS=VDS , ID =-250uA
VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS
gfs
Forward Transconductance
VDS=-5V , ID=-6A
---
17
---
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
26
Qg
Total Gate Charge (-4.5V)
---
12.6
17.6
Qgs
Gate-Source Charge
---
4.8
6.7
Qgd
Gate-Drain Charge
---
4.8
6.7
Td(on)
VDS=-15V , VGS=-4.5V , ID=-6A
Turn-On Delay Time
V/
m
V
mV/
uA
nC
---
4.6
9.2
Rise Time
VDD=-15V , VGS=-10V , RG=3.3 ,
---
14.8
26.6
Turn-Off Delay Time
ID=-6A
---
41
82
Fall Time
---
19.6
39.2
Ciss
Input Capacitance
---
1345
1883
Coss
Output Capacitance
---
194
272
Crss
Reverse Transfer Capacitance
---
158
221
Min.
Typ.
Max.
Unit
49
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
-6.5
A
---
---
-26
A
---
---
-1.2
V
---
16.3
---
nS
---
5.9
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-20A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
Pulsed Source Current
2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Conditions
1,6
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-6A , dI/dt=100A/µs , TJ=25
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM3203
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
ID=-6A
RDSON (m )
44
30
16
4
Fig.1 Typical Output Characteristics
6
-VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
12
-IS Source Current(A)
10
8
6
TJ=150
TJ=25
4
2
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0
0.5
-50
0
50
TJ ,Junction Temperature (
100
)
150
-50
0
50
100
TJ , Junction Temperature ( )
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UM3203
Dual P-Ch 30V Fast Switching MOSFETs
10000
F=1.0MHz
Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
25
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (R
JA )
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
SINGLE
TJpeak = TC+P DMXR
JC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4