UM3203 Dual P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UM3203 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM3203 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) -30V 25m ID -6.5A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch SOP8 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage ID@TA=25 ID@TA=70 IDM 20 V 1 -6.5 A 1 -5.2 A -26 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 176 mJ IAS Avalanche Current -38 A Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 PD@TA=25 4 Thermal Data Symbol R R JA JC Parameter Typ. Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case 1 1 1 Max. Unit --- 85 /W --- 25 /W UM3203 Dual P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol BVDSS BVDSS RDS(ON) VGS(th) , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25 --- -0.022 --- VGS=-10V , ID=-6A --- 20 25 VGS=-4.5V , ID=-4A --- 32 42 -1.0 -1.5 -2.5 --- 4.6 --- VDS=-24V , VGS=0V , TJ=25 --- --- -1 VDS=-24V , VGS=0V , TJ=55 --- --- -5 20V , VDS=0V --- --- 100 nA S , ID=-1mA VGS=VDS , ID =-250uA VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=-5V , ID=-6A --- 17 --- Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Qg Total Gate Charge (-4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.8 6.7 Qgd Gate-Drain Charge --- 4.8 6.7 Td(on) VDS=-15V , VGS=-4.5V , ID=-6A Turn-On Delay Time V/ m V mV/ uA nC --- 4.6 9.2 Rise Time VDD=-15V , VGS=-10V , RG=3.3 , --- 14.8 26.6 Turn-Off Delay Time ID=-6A --- 41 82 Fall Time --- 19.6 39.2 Ciss Input Capacitance --- 1345 1883 Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 158 221 Min. Typ. Max. Unit 49 --- --- mJ Min. Typ. Max. Unit --- --- -6.5 A --- --- -26 A --- --- -1.2 V --- 16.3 --- nS --- 5.9 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-20A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions 1,6 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25 IF=-6A , dI/dt=100A/µs , TJ=25 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM3203 Dual P-Ch 30V Fast Switching MOSFETs Typical Characteristics ID=-6A RDSON (m ) 44 30 16 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 10 8 6 TJ=150 TJ=25 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0 0.5 -50 0 50 TJ ,Junction Temperature ( 100 ) 150 -50 0 50 100 TJ , Junction Temperature ( ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UM3203 Dual P-Ch 30V Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R JA ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXR JC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4