UD4016 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The UD4016 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS 40V RDS(ON) ID 6.5mΩ 75A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 1 75 A 1 58 A 150 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 190 mJ IAS Avalanche Current 47 A Total Power Dissipation 52.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 2.4 ℃/W UD4016 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=15A --- 5.2 6.5 VGS=4.5V , ID=12A --- 7 9 1.0 1.5 2.5 V --- -5.84 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 27 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 2.8 Ω Qg Total Gate Charge (4.5V) --- 28 --- Qgs Gate-Source Charge --- 7.85 --- Qgd Gate-Drain Charge --- 12.5 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 20.2 --- Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 11.8 --- Turn-Off Delay Time ID=1A --- 84.8 --- Fall Time --- 8.6 --- Ciss Input Capacitance --- 3354 --- Coss Output Capacitance --- 275 --- Crss Reverse Transfer Capacitance --- 204 --- Min. Typ. Max. Unit 77.4 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 75 A --- --- 150 A --- --- 1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=47A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD4016 N-Ch 40V Fast Switching MOSFETs Typical Characteristics 12 8 ID=12A VGS=10V 10 7 VGS=5V RDSON (mΩ) ID Drain Current (A) VGS=7V 8 VGS=4.5V 6 6 VGS=3V 4 5 2 0 0 0.1 0.2 0.3 0.4 VDS , Drain-to-Source Voltage (V) 4 0.5 2 Fig.1 Typical Output Characteristics 8 10 10 ID=12A VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 15 30 45 QG , Total Gate Charge (nC) 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 6 VGS (V) Fig.2 On-Resistance vs. G-S Voltage 12 IS Source Current(A) 4 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD4016 N-Ch 40V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz Capacitance (pF) 10us 100.00 Ciss 100us 1000 ID (A) 10.00 Coss Crss 100 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS , Drain to Source Voltage(V) 21 0.1 25 1 10 100 VDS (V) Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 4