UM3302 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UM3302 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM3302 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 10.5mΩ 9.5A -30V 25mΩ -6.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology Dual SOP8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed D1 D1 D2 D2 z Green Device Available Absolute Maximum Ratings S2 S1 G1 G2 Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±20 ±20 V 1 9.5 -6.5 A 1 7.6 -5.2 A 40 -26 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 138 176 mJ IAS Avalanche Current 35 -38 A 4 PD@TA=25℃ Total Power Dissipation 1.5 1.5 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 Typ. --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 25 ℃/W Rev A.02 D051011 1 UM3302 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=10A --- 8.5 10.5 VGS=4.5V , ID=8A --- 12 15 1.0 1.5 2.5 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 5.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 4.4 Ω Qg Total Gate Charge (4.5V) --- 12.5 17.5 Qgs Gate-Source Charge --- 4.4 6.2 Qgd Gate-Drain Charge --- 5 7.0 Td(on) VDS=15V , VGS=4.5V , ID=10A Turn-On Delay Time uA nC --- 6.2 12.4 Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 59 106 Turn-Off Delay Time ID=10A --- 27.6 55 Fall Time --- 8.4 16.8 Ciss Input Capacitance --- 1317 1845 Coss Output Capacitance --- 163 228.2 Crss Reverse Transfer Capacitance --- 131 183.4 Min. Typ. Max. Unit 45 --- --- mJ Min. Typ. Max. Unit --- --- 9.5 A --- --- 40 A --- --- 1.2 V --- 12.5 --- nS --- 5 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM3302 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-6A --- 20 25 VGS=-4.5V , ID=-4A --- 34 42 -1.0 -1.5 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge (-4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.8 6.7 Qgd Gate-Drain Charge --- 4.8 6.7 Td(on) VDS=-15V , VGS=-4.5V , ID=-6A Turn-On Delay Time uA nC --- 4.6 9.2 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 14.8 26.6 Turn-Off Delay Time ID=-6A --- 41 82 Fall Time --- 19.6 39.2 Ciss Input Capacitance --- 1345 1883 Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 158 221 Min. Typ. Max. Unit 49 --- --- mJ Min. Typ. Max. Unit --- --- -6.5 A --- --- -26 A --- --- -1.2 V --- 16.3 --- nS --- 5.9 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-6A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UM3302 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 12 42 ID=8A VGS=10V 35 ID Drain Current (A) VGS=7V 11 RDSON (mΩ) VGS=5V 28 VGS=4.5V 21 VGS=3V 9 14 8 7 6 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 2 3 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 12 IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UM3302 N-Ch and P-Ch Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 5 1000 UM3302 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Typical Characteristics 34 ID=6A RDSON (mΩ) 30 26 22 18 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 6 150 UM3302 N-Ch and P-Ch Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 7