UNITPOWER UM3302

UM3302
N-Ch and P-Ch Fast Switching MOSFETs
General Description
Product Summery
The UM3302 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The UM3302 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDSON
ID
30V
10.5mΩ
9.5A
-30V
25mΩ
-6.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Features
z Networking DC-DC Power System
z CCFL Back-light Inverter
z Advanced high cell density Trench technology
Dual SOP8 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
D1
D1 D2
D2
z Green Device Available
Absolute Maximum Ratings
S2
S1 G1
G2
Rating
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
IDM
±20
±20
V
1
9.5
-6.5
A
1
7.6
-5.2
A
40
-26
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
138
176
mJ
IAS
Avalanche Current
35
-38
A
4
PD@TA=25℃
Total Power Dissipation
1.5
1.5
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
Thermal Data
Symbol
Parameter
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient 1
Typ.
---
85
℃/W
RθJC
Thermal Resistance Junction-Case1
---
25
℃/W
Rev A.02 D051011
1
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.027
---
V/℃
VGS=10V , ID=10A
---
8.5
10.5
VGS=4.5V , ID=8A
---
12
15
1.0
1.5
2.5
V
---
-5.8
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
5.8
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.2
4.4
Ω
Qg
Total Gate Charge (4.5V)
---
12.5
17.5
Qgs
Gate-Source Charge
---
4.4
6.2
Qgd
Gate-Drain Charge
---
5
7.0
Td(on)
VDS=15V , VGS=4.5V , ID=10A
Turn-On Delay Time
uA
nC
---
6.2
12.4
Rise Time
VDD=15V , VGS=10V , RG=3.3Ω
---
59
106
Turn-Off Delay Time
ID=10A
---
27.6
55
Fall Time
---
8.4
16.8
Ciss
Input Capacitance
---
1317
1845
Coss
Output Capacitance
---
163
228.2
Crss
Reverse Transfer Capacitance
---
131
183.4
Min.
Typ.
Max.
Unit
45
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
9.5
A
---
---
40
A
---
---
1.2
V
---
12.5
---
nS
---
5
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=20A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=10A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
VGS=-10V , ID=-6A
---
20
25
VGS=-4.5V , ID=-4A
---
34
42
-1.0
-1.5
-2.5
V
---
4.6
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-6A
---
17
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
26
Ω
Qg
Total Gate Charge (-4.5V)
---
12.6
17.6
Qgs
Gate-Source Charge
---
4.8
6.7
Qgd
Gate-Drain Charge
---
4.8
6.7
Td(on)
VDS=-15V , VGS=-4.5V , ID=-6A
Turn-On Delay Time
uA
nC
---
4.6
9.2
Rise Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
14.8
26.6
Turn-Off Delay Time
ID=-6A
---
41
82
Fall Time
---
19.6
39.2
Ciss
Input Capacitance
---
1345
1883
Coss
Output Capacitance
---
194
272
Crss
Reverse Transfer Capacitance
---
158
221
Min.
Typ.
Max.
Unit
49
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
-6.5
A
---
---
-26
A
---
---
-1.2
V
---
16.3
---
nS
---
5.9
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-20A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-6A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
12
42
ID=8A
VGS=10V
35
ID Drain Current (A)
VGS=7V
11
RDSON (mΩ)
VGS=5V
28
VGS=4.5V
21
VGS=3V
9
14
8
7
6
0
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
2
3
Fig.1 Typical Output Characteristics
4
6
VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
12
IS -Source Current(A)
10
8
TJ=150℃ TJ=25℃
6
4
2
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
4
150
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
10000
F=1.0MHz
Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
21
25
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
5
1000
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
34
ID=6A
RDSON (mΩ)
30
26
22
18
2
Fig.1 Typical Output Characteristics
4
6
VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
12
-IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
6
150
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
10000
F=1.0MHz
Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
25
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
7