XINDEYI UD4004

UD4004
N-Ch 40V Fast Switching MOSFETs
General Description
Product Summery
The UD4004 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD4004 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
40V
RDS(ON)
ID
11.5mΩ
42A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Rating
Units
Drain-Source Voltage
40
V
Gate-Source Voltage
±20
V
1
42
A
1
32
A
85
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
69
mJ
IAS
Avalanche Current
25
A
Total Power Dissipation
34.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
PD@TC=25℃
4
Thermal Data
Symbol
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
3.6
℃/W
UD4004
N-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
40
---
---
V
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
VGS=10V , ID=20A
---
9.5
11.5
VGS=4.5V , ID=10A
---
13.5
16.5
1.0
1.5
2.5
V
---
-5.64
---
mV/℃
VDS=32V , VGS=0V , TJ=25℃
---
---
1
VDS=32V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
35.9
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.1
4.2
Ω
Qg
Total Gate Charge (4.5V)
---
10.7
---
Qgs
Gate-Source Charge
---
3.3
---
Qgd
Gate-Drain Charge
---
4.2
---
Td(on)
VDS=20V , VGS=4.5V , ID=12A
nC
---
8.6
---
Rise Time
VDD=12V , VGS=10V , RG=3.3Ω
---
3.4
---
Turn-Off Delay Time
ID=6A
---
24.8
---
Fall Time
---
2.2
---
Ciss
Input Capacitance
---
1314
---
Coss
Output Capacitance
---
120
---
Crss
Reverse Transfer Capacitance
---
88
---
Min.
Typ.
Max.
Unit
45
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=20A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
---
---
42
A
---
---
85
A
---
---
1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD4004
N-Ch 40V Fast Switching MOSFETs
Typical Characteristics
20
12
ID=12A
VGS=10V
10
VGS=7V
16
VGS=4.5V
RDSON (mΩ)
ID Drain Current (A)
VGS=5V
8
6
12
VGS=3V
4
2
8
0
0
0.25
0.5
0.75
2
1
VDS Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
4
6
8
VGS (V)
10
Fig.2 On-Resistance vs. G-S Voltage
6
10
VGS , Gate to Source Voltage (V)
IS Source Current(A)
VDS=20V
4
TJ=150℃
TJ=25℃
2
0
0.00
0.25
0.50
0.75
1.00
ID=12A
8
6
4
2
0
0
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
10
15
QG , Total Gate Charge (nC)
20
25
Fig.4 Gate-charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
1.4
Normalized VGS(th)
5
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UD4004
N-Ch 40V Fast Switching MOSFETs
10000
1000
F=1.0MHz
100
10us
ID (A)
1000
100us
10
Coss
100
Crss
10ms
100ms
DC
1
TC=25℃
Single Pulse
10
0
1
5
9
13
17
21
25
0.1
1
VDS Drain to Source Voltage (V)
10
100
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
Normalized Thermal Response (RθJC)
Capacitance (pF)
Ciss
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
0.01
D = TON/T
SINGLE PULSE
0.01
0.00001
TON
0.0001
T
TJpeak = TC + PDM x RθJC
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
4