UD3008 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The UD3008 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD3008 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 30V 25mΩ 24A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch TO252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 24 A 1 15 A 1 7.3 A 1 5.8 A 50 A Single Pulse Avalanche Energy 26.6 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 12.7 A PD@TC=25℃ Total Power Dissipation4 20.8 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 6 ℃/W UD3008 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=10A --- 20 25 VGS=4.5V , ID=8A --- 30 38 1.0 1.5 2.5 V --- -4.2 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 5.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 4.6 Ω Qg Total Gate Charge (4.5V) --- 4.9 6.9 Qgs Gate-Source Charge --- 1.66 2.3 Qgd Gate-Drain Charge --- 1.85 2.6 Td(on) VDS=15V , VGS=4.5V , ID=10A Turn-On Delay Time uA nC --- 1.6 3.2 Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 15.8 28 Turn-Off Delay Time ID=10A --- 13 26 Fall Time --- 4.8 9.6 Ciss Input Capacitance --- 416 582 Coss Output Capacitance --- 62 87 Crss Reverse Transfer Capacitance --- 51 71 Min. Typ. Max. Unit 6 --- --- mJ Min. Typ. Max. Unit --- --- 24 A --- --- 50 A --- --- 1.2 V --- 8.7 --- nS --- 1.95 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=6A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD3008 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 65 ID=10A RDSON (mΩ) 50 35 20 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) 6 4 TJ=150℃ 2 0 0.00 0.25 0.50 TJ=25℃ 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD3008 N-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 100us 10.00 1ms 100 ID (A) Capacitance (pF) Ciss Coss 10ms 100ms DC 1.00 Crss 0.10 o Tc=25 C Single Pulse 10 1 5 9 13 17 21 25 0.01 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4