UNITPOWER UD3008

UD3008
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD3008 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
30V
25mΩ
24A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
Rating
Units
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
1
24
A
1
15
A
1
7.3
A
1
5.8
A
50
A
Single Pulse Avalanche Energy
26.6
mJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
IAS
Avalanche Current
12.7
A
PD@TC=25℃
Total Power Dissipation4
20.8
W
PD@TA=25℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
6
℃/W
UD3008
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.023
---
V/℃
VGS=10V , ID=10A
---
20
25
VGS=4.5V , ID=8A
---
30
38
1.0
1.5
2.5
V
---
-4.2
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=10A
---
5.5
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.3
4.6
Ω
Qg
Total Gate Charge (4.5V)
---
4.9
6.9
Qgs
Gate-Source Charge
---
1.66
2.3
Qgd
Gate-Drain Charge
---
1.85
2.6
Td(on)
VDS=15V , VGS=4.5V , ID=10A
Turn-On Delay Time
uA
nC
---
1.6
3.2
Rise Time
VDD=15V , VGS=10V , RG=3.3Ω
---
15.8
28
Turn-Off Delay Time
ID=10A
---
13
26
Fall Time
---
4.8
9.6
Ciss
Input Capacitance
---
416
582
Coss
Output Capacitance
---
62
87
Crss
Reverse Transfer Capacitance
---
51
71
Min.
Typ.
Max.
Unit
6
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
24
A
---
---
50
A
---
---
1.2
V
---
8.7
---
nS
---
1.95
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=6A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=10A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3008
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
65
ID=10A
RDSON (mΩ)
50
35
20
2
Fig.1 Typical Output Characteristics
4
6
VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
IS Source Current(A)
6
4
TJ=150℃
2
0
0.00
0.25
0.50
TJ=25℃
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UD3008
N-Ch 30V Fast Switching MOSFETs
1000
100.00
F=1.0MHz
100us
10.00
1ms
100
ID (A)
Capacitance (pF)
Ciss
Coss
10ms
100ms
DC
1.00
Crss
0.10
o
Tc=25 C
Single Pulse
10
1
5
9
13
17
21
25
0.01
0.1
VDS Drain to Source Voltage (V)
1
Fig.7 Capacitance
10
100
VDS (V)
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
P DM
T ON
0.02
0.01
T
D = TON/T
TJpeak = TC+P DMXRθJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4