Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS(on) 0.95 Ω • Periodic avalanche rated ID 4.5 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 1 2 P-TO263-3-2 P-TO220-3-1 3 P-TO220-3-31 Type Package Ordering Code Marking SPP04N60C2 P-TO220-3-1 Q67040-S4304 04N60C2 SPB04N60C2 P-TO263-3-2 Q67040-S4305 04N60C2 SPA04N60C2 P-TO220-3-31 Q67040-S4330 04N60C2 Maximum Ratings Parameter Symbol Value SPP_B Continuous drain current Unit SPA A ID TC = 25 °C 4.5 4.51) TC = 100 °C 2.8 2.81) 9 9 Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS 130 130 EAR 0.4 0.4 Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 4.5 Reverse diode dv/dt dv/dt 6 6 Gate source voltage VGS ±20 ±20 Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 50 31 Operating and storage temperature Tj , Tstg A mJ ID =3.6A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 2) ID =4.5A, VDD =50V A V/ns IS = 4.5 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C Page 1 -55...+150 V W °C 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.5 Thremal resistance, junction - case, FullPAK RthJC_FP - - 4 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - Linear derating factor - - 0.4 Linear derating factor, FullPAK - - 0.25 - - 260 °C V Soldering temperature, Tsold K/W W/K 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =4.5A Gate threshold voltage, VGS = VDS ID =200µA, Tj =25°C Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.5 1 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 50 IGSS - - 100 nA RDS(on) - 0.85 0.95 Ω RG - 0.95 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=2.8A, Tj =25°C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Electrical Characteristics Parameter Symbol Conditions Values min. typ. - 2.5 Unit max. Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =2.8A Input capacitance Ciss VGS =0V, VDS =25V, - 580 - Output capacitance Coss f=1MHz - 220 - Reverse transfer capacitance Crss - 7 - - 20 - - 35 - Effective output capacitance, 4) Co(er) VGS =0V, energy related VDS =0V to 480V Effective output capacitance, 5) Co(tr) pF time related Turn-on delay time td(on) VDD =380V, VGS =0/13V, - 10 - Rise time tr ID =4.5A, - 31 - Turn-off delay time td(off) RG=18Ω, Tj=125°C - 44 66 Fall time tf - 12.5 18.8 - 4.5 - - 11 - - 17.6 22.9 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =4.5A VDD =350V, ID =4.5A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =4.5A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data Electrical Characteristics Symbol Parameter Conditions Values Unit min. typ. max. - - 4.5 - - 9 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =350V, IF =IS , - 900 1530 ns Reverse recovery charge Qrr diF /dt=100A/µs - 3.2 - µC Peak reverse recovery current Irrm - 12 - A Peak rate of fall of reverse dirr /dt - 440 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_B SPA Rth1 0.039 0.039 Rth2 0.083 Rth3 Symbol Value Unit SPP_B SPA Cth1 0.00008293 0.0000734 0.075 Cth2 0.000282 0.000282 0.101 0.102 Cth3 0.0004859 0.000401 Rth4 0.262 0.27 Cth4 0.0006523 0.000736 Rth5 0.294 0.594 Cth5 0.005017 0.00501 Rth6 0.094 2.536 Cth6 0.052 0.412 R th1 R th,n Tj K/W T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 1 Power dissipation 2 Power dissiaption FullPAK Ptot = f (TC ) Ptot = f (TC ) 55 SPP04N60C2 40 W W 45 30 P tot Ptot 40 35 25 30 20 25 15 20 15 10 10 5 5 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS ) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 1 °C 160 TC 10 1 10 0 10 0 ID A ID A 10 -1 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 10 2 10 V VDS 3 Page 5 -1 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2002-08-12 3 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp ) ZthJC = f (tp ) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W ZthJC 10 0 ZthJC 10 0 10 -1 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 8 14 A 1 s 10 20V 12V 10V 20V 12V 10V 9.5V A 8 9V ID 9.5V ID 10 9V 8.5V 8V 4 8.5V 7.5V 6 8V 7V 4 2 7.5V 6.5V 7V 2 6V 6.5V 0 0 5 10 15 25 V VDS 0 0 5 10 15 25 V VDS Page 6 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150°C, VGS parameter : ID = 2.8 A, VGS = 10 V 5 5.5 SPP04N60C2 Ω Ω 4 RDS(on) RDS(on) 4.5 3.5 4 3.5 3 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 2.5 2 1.5 1 0 1 2 3 4 5 6 7 A 2.5 2 1.5 98% 1 typ 0.5 0 -60 8.5 -20 20 60 100 °C ID 12 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs VGS = f (QGate) parameter: ID = 4.5 A pulsed 16 16 A V 12 12 V GS ID 11 Typ. transfer characteristics 10 25 °C 150 °C 8 6 6 4 4 2 2 2 4 6 8 10 12 14 16 V 20 VGS Page 7 SPP04N60C2 0,2 VDS max 0,8 VDS max 10 8 0 0 180 Tj 0 0 4 8 12 16 20 nC 26 QGate 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD ) t = f (ID), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS=380V, VGS=0/+13V, RG =18Ω 10 1 10 2 SPP04N60C2 tr A ns td(off) tf t IF 10 0 10 1 td(on) 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2.4 V 2 10 0 0 3 1 2 3 4 5 6 7 8 VSD A ID 15 Typ. switching time 16 Typ. switching losses1) t = f (RG), inductive load, Tj =125°C E = f (ID ), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=4.5 A par.: VDS=380V, VGS=0/+13V, RG =18Ω 10 3 0.12 ns mWs td(off) td(on) 10 2 10 *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. t E 0.08 tr tf 0.06 Eon* 10 1 Eoff 0.04 0.02 10 0 0 20 40 60 80 100 120 140 160 Ω 200 RG Page 8 0 0 1 2 3 4 5 6 A ID 8 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 17 Typ. switching losses1) 18 Avalanche SOA E = f(RG ), inductive load, Tj =125°C IAR = f (tAR ) par.: VDS=380V, VGS=0/+13V,ID =4.5A par.: Tj ≤ 150 °C 4.5 0.22 A Tj (START) =25°C 3.5 IAR E *) E on includes SDP06S60 diode mWs commutation losses. 1This chart helps to estimate the switching power losses. 0.18 The values can be different under other operating conditions. 0.16 0.14 3 2.5 0.12 0.1 2 Eon* Tj (START) =125°C E off 0.08 1.5 0.06 1 0.04 0.5 0.02 0 0 20 40 60 0 -3 10 Ω 200 RG 80 100 120 140 160 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR 19 Avalanche energy 20 Drain-source breakdown voltage EAS = f (Tj ) V(BR)DSS = f (Tj ) par.: ID = 3.6 A, VDD = 50 V SPP04N60C2 160 720 V V (BR)DSS mJ E AS 120 100 680 660 640 80 620 60 600 40 580 20 0 20 560 40 60 80 100 120 °C 160 Tj 540 -60 -20 20 60 100 °C 180 Tj Page 9 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data 21 Avalanche power losses 22 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.4mJ parameter: VGS =0V, f=1 MHz 10 4 200 pF W 10 3 125 Ciss C P AR 150 10 2 100 Coss 75 10 1 50 Crss 25 0 4 10 10 5 10 Hz 6 10 0 0 100 200 300 400 V 600 VDS f 23 Typ. Coss stored energy Eoss=f(VDS ) 3.5 E oss µJ 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 10 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Definition of diodes switching characteristics Page 11 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 4.44 A 13.5 ±0.5 C 9.98 ±0.48 0.05 5.23 ±0.9 15.38 ±0.6 2.8 ±0.2 1.27±0.13 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 ±0.2 1.27 ±0.1 B 0.1 A 8.5 1) 0.05 2.4 2.7 ±0.3 4.7 ±0.5 7.55 1) (15) 9.25 ±0.2 1 ±0.3 0...0.3 0...0.15 0.75 ±0.1 0.5 ±0.1 1.05 8 ˚ MAX. 2.54 5.08 1) 0.25 M A B 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 Page 12 2002-08-12 SPP04N60C2, SPB04N60C2 SPA04N60C2 Final data P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 4.7 ±0.005 2.7 ±0.005 1 2 3 3.3 ±0.005 13.6 ±0.005 9.68 ±0.005 12.79 ±0.005 14.1 ±0.005 15.99 ±0.005 7˚ 1.5 ±0.001 1.28 +0.003 -0.002 0.5 +0.005 -0.002 0.7 +0.003 -0.002 2.57 ±0.002 2.54 Please refer to mounting instructions (application note AN-TO220-3-31-01) Page 13 2002-08-12 Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2002-08-12