SPP06N80C3 SPA06N80C3 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS(on) 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances 1 • Improved transconductance 2 3 P-TO220-3-31 • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 SPA06N80C3 P-TO220-3-31 Q67040-S4435 06N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA ID A TC = 25 °C 6 61) TC = 100 °C 3.8 3.81) 18 18 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 230 230 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 6 6 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 83 39 Operating and storage temperature Tj , Tstg mJ ID=1.2A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=6A, VDD =50V Page 1 -55...+150 W °C 2003-07-02 SPP06N80C3 SPA06N80C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 640 V, ID = 6 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=6A Values Unit min. typ. max. 800 - - - 870 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=250µA, VGS =VDS Zero gate voltage drain current I DSS VDS=800V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C - 0.5 10 Tj=150°C - - 100 VGS=20V, V DS=0V - - 100 Ω VGS=10V, ID=3.8A Tj=25°C - 0.78 0.9 Tj=150°C - 2.1 - f=1MHz, open drain - 0.7 - Page 2 nA 2003-07-02 SPP06N80C3 SPA06N80C3 Final data Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 4 - S pF ID=3.8A Input capacitance Ciss VGS=0V, VDS=25V, - 785 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 20 - - 22 - - 42 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 25 - Rise time tr ID=6A, - 15 - Turn-off delay time td(off) RG =15Ω, T j=125°C - 65 75 Fall time tf - 8 11 - 3.3 - - 14 - - 27 35 - 6 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=640V, ID=6A VDD=640V, ID=6A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=6A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-07-02 SPP06N80C3 SPA06N80C3 Final data Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 6 - - 18 TC=25°C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =400V, IF =IS , - 520 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 5 - µC Peak reverse recovery current I rrm - 18 - A Peak rate of fall of reverse dirr /dt - 400 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Value Symbol Unit SPP SPA Rth1 0.024 0.024 Rth2 0.048 Rth3 Symbol Value Unit SPP SPA Cth1 0.0001172 0.0001172 0.048 Cth2 0.000447 0.000447 0.083 0.086 Cth3 0.0006303 0.0006303 Rth4 0.309 0.195 Cth4 0.001828 0.001828 Rth5 0.317 0.451 Cth5 0.004786 0.007578 Rth6 0.112 2.51 Cth6 0.046 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-07-02 SPP06N80C3 SPA06N80C3 Final data 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 100 SPP06N80C3 40 W W 80 30 Ptot Ptot 70 60 50 25 20 40 15 30 10 20 5 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2003-07-02 3 SPP06N80C3 SPA06N80C3 Final data 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W ZthJC 10 0 ZthJC 10 0 10 -1 10 -2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25°C ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 20 11 20V 10V A 20V 10V 8V A 8V 16 9 7V 8 ID 14 ID 1 s 10 7V 12 7 6V 6 10 5 5.5V 8 4 6V 6 4 3 5V 2 4.5V 1 4V 5V 2 0 0 5 10 15 20 V 30 VDS 0 0 5 10 15 20 V 30 VDS Page 6 2003-07-02 SPP06N80C3 SPA06N80C3 Final data 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 3.8 A, VGS = 10 V 5 5.5 Ω Ω 4V 5V 4.5 6V 4 RDS(on) RDS(on) SPP06N80C3 3.5 3.5 3 5.5V 4.5V 3 4 2.5 2.5 7V 8V 10V 20V 2 2 1.5 98% 1 1.5 typ 0.5 1 0 2 4 6 8 A ID 0 -60 11 -20 20 60 100 °C 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 6 A pulsed parameter: tp = 10 µs 20 16 A SPP06N80C3 V 25°C 16 12 VGS ID 14 12 10 0,2 VDS max 10 0,8 VDS max 8 150°C 8 6 6 4 4 2 2 0 0 2 4 6 8 10 12 14 16 V 20 VGS Page 7 0 0 5 10 15 20 25 30 35 40 nC 50 QGate 2003-07-02 SPP06N80C3 SPA06N80C3 Final data 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 10 2 SPP06N80C3 6 A A IF IAR 10 1 4 3 10 0 2 TJ(Start) = 25°C Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) 1 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 TJ(Start) = 125°C 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 1.2 A, VDD = 50 V 250 980 SPP06N80C3 V mJ 940 V(BR)DSS E AS 200 175 150 920 900 880 860 125 840 100 820 75 800 780 50 760 25 0 25 740 50 75 100 150 °C Tj 720 -60 -20 20 60 100 °C 180 Tj Page 8 2003-07-02 SPP06N80C3 SPA06N80C3 Final data 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.2mJ parameter: VGS =0V, f=1 MHz 200 10 4 W pF Ciss 10 3 140 C PAR 160 120 10 2 100 80 Coss 60 10 1 40 Crss 20 0 4 10 10 5 10 Hz 6 f 10 0 0 100 200 300 400 500 600 800 V VDS 19 Typ. Coss stored energy Eoss=f(VDS) 7 E oss µJ 5 4 3 2 1 0 0 100 200 300 400 500 600 800 V VDS Page 9 2003-07-02 Final data SPP06N80C3 SPA06N80C3 Definition of diodes switching characteristics Page 10 2003-07-02 SPP06N80C3 SPA06N80C3 Final data P-TO-220-3-1 B 4.44 0.05 9.98 ±0.48 2.8 ±0.2 1.27±0.13 13.5 ±0.5 C A 5.23 ±0.9 15.38 ±0.6 10 ±0.4 3.7 ±0.2 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) Page 11 2003-07-02 Final data SPP06N80C3 SPA06N80C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-07-02