SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS(on) 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • High peak current capability 1 • Improved transconductance 2 3 P-TO220-3-31 Type SPP11N65C3 Package P-TO220-3-1 Ordering Code Q67040-S4557 Marking 11N65C3 SPA11N65C3 P-TO220-3-31 Q67040-S4554 11N65C3 SPI11N65C3 P-TO262-3-1 11N65C3 Q67040-S4561 Maximum Ratings Symbol Parameter Value SPP_I Continuous drain current Unit SPA A ID TC = 25 °C 11 11 1) TC = 100 °C 7 71) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 340 340 EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 Operating and storage temperature T j , Tstg mJ ID=2.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD =50V Page 1 -55...+150 W °C 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values min. typ. max. - - - 730 - 2.1 3 3.9 Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 5) Drain-Source avalanche V(BR)DS VGS=0V, ID=4A Unit V breakdown voltage Gate threshold voltage VGS(th) ID=500µA, V GS=V DS Zero gate voltage drain current I DSS VDS=600V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, V DS=0V - - 100 Ω VGS=10V, ID=7A Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open drain - 0.86 - Page 2 nA 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Symbol Transconductance gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 8.3 - S pF ID=7A Input capacitance Ciss VGS=0V, VDS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - - 45 - - 85 - Effective output capacitance,6) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,7) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/10V, - 10 - Rise time tr ID=11A, - 5 - Turn-off delay time td(off) RG=6.8Ω - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, ID=11A V DD=480V, ID=11A, nC V GS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5HTRB @ 1000h, 600V, T jmax resp. accelerated HTRB @ 168h, 600V, Tj = 175°C according to JEDEC A108, MIL-STD 750/1038-1040, 1042 6C o(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 7C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 11 - - 33 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , - 400 600 ns Reverse recovery charge Qrr diF/dt=100A/µs - 6 - µC Peak reverse recovery current Irrm - 41 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_B SPA Rth1 0.015 0.15 Rth2 0.03 Rth3 Symbol Value Unit SPP_B SPA Cth1 0.0001878 0.0001878 0.03 Cth2 0.0007106 0.0007106 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 140 SPP11N65C3 35 W W 120 110 25 Ptot Ptot 100 90 20 80 70 15 60 50 10 40 30 5 20 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 10 0 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 Page 5 10 -2 0 10 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2003-08-15 3 SPP11N65C3, SPA11N65C3 SPI11N65C3 5 Transient thermal impedance FullPAK 6 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj =25°C parameter: D = tp/t parameter: tp = 10 µs, VGS 10 1 40 K/W 10 0 32 7V 28 ID ZthJC 20V 10V 8V A 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 6,5V 24 20 6V 16 5,5V 12 10 -3 8 5V 4 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 0 0 1 s 10 4,5V 3 6 9 12 15 18 21 27 V VDS tp 7 Typ. output characteristic 8 Typ. drain-source on resistance ID = f (VDS); Tj =150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, VGS 2 22 20V 8V 7V 7.5V A 16 ID 4.5V 4V 6V RDS(on) 18 Ω 14 5V 6V 5.5V 1.6 1.4 5.5V 12 1.2 10 5V 8 6 1 4.5V 0.8 4V 0.6 4 2 0 0 5 10 15 25 V VDS Page 6 0.4 0 6.5V 8V 20V 2 4 6 8 10 12 14 16 A 20 ID 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 9 Drain-source on-state resistance 10 Typ. transfer characteristics RDS(on) = f (Tj) ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs 2.1 SPP11N65C3 40 Ω A 25°C 1.8 28 1.4 ID RDS(on) 32 1.6 1.2 24 150°C 20 1 16 0.8 12 0.6 98% 0.4 8 typ 4 0.2 0 -60 -20 20 60 100 °C 0 0 180 2 4 6 8 10 12 Tj V 15 VGS 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate) parameter: ID = 11 A pulsed IF = f (VSD) 16 parameter: Tj , tp = 10 µs 10 2 SPP11N65C3 V SPP11N65C3 A 0,2 VDS max 10 10 1 0,8 VDS max IF VGS 12 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 70 QGate 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 13 Typ. switching time 14 Typ. switching time t = f (ID), inductive load, Tj =125°C t = f (RG ), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG=6.8Ω par.: VDS =380V, VGS=0/+13V, ID=11 A 350 70 ns ns 60 td(off) 55 250 50 t t 45 200 40 td(off) td(on) tr tf 35 150 30 25 20 100 tf 15 td(on) 50 10 5 tr 0 0 2 4 6 8 0 0 12 A 10 20 30 40 50 ID Ω 70 RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=11A par.: VDS =380V, VGS=0/+13V, ID=11A 140 3000 V/ns A/µs 120 dv/dt(off) dv/dt di/dt 110 2000 100 90 80 1500 70 60 1000 50 di/dt(off) 500 40 dv/dt(on) 30 di/dt(on) 20 0 0 20 40 60 80 Ω 120 RG 10 0 10 20 30 40 50 Ω 70 RG Page 8 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 17 Typ. switching losses 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, RG=6.8Ω par.: VDS =380V, VGS=0/+13V,ID =11A 0.04 mWs 0.24 *) Eon includes SPD06S60 diode commutation losses *) Eon includes SPD06S60 diode commutation losses mWs 0.03 Eoff E E 0.16 0.025 0.02 0.12 0.015 0.08 Eon* 0.01 Eon* 0.04 0.005 Eoff 0 0 2 4 6 8 0 0 12 A 10 20 30 40 50 ID 70 RG 19 Avalanche SOA 20 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 2.5 A, VDD = 50 V 350 4 A mJ Tj(Start)=25°C 250 E AS 3 IAR Ω 2.5 200 2 Tj(Start)=125°C 150 1.5 100 1 50 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 9 0 20 40 60 80 100 120 160 °C Tj 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR =0.6mJ 785 SPP11N65C3 300 V 745 725 PAR V(BR)DSS W 705 685 200 150 665 100 645 625 50 605 585 -60 -20 20 60 100 °C 0 4 10 180 10 5 10 Hz Tj f 23 Typ. capacitances 24 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: VGS =0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C E oss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Page 10 2003-08-15 6 SPP11N65C3, SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics Page 11 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-220-3-1 B 4.44 0.05 9.98 ±0.48 2.8 ±0.2 1.27±0.13 13.5 ±0.5 C A 5.23 ±0.9 15.38 ±0.6 10 ±0.4 3.7 ±0.2 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 Page 12 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-262-3-1 (I2-PAK) 10 ±0.2 A B 0...0.3 4.4 1) 0.05 13.5 ±0.5 4.55 ±0.2 C 2.4 9.25 ±0.2 1 ±0.3 1.27 7.55 11.6 ±0.3 8.5 1) 0.5 ±0.1 0...0.15 2.4 1.05 3 x 0.75 ±0.1 2 x 2.54 1) 0.25 M A B C Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) Page 13 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2003-08-15