Preliminary data SPW17N80C2 Cool MOS™ Power Transistor COOLMOS Power Semiconductors Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 247 · Product Summary VDS 800 V Ultra low gate charge R DS(on) 290 mW · Periodic avalanche rated ID 17 A · Extreme dv/dt rated · Ultra low effective capacitances P-TO247 Type Package Ordering Code Marking SPW17N80C2 P-TO247 Q67040-S4359 SPW17N80C2 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 °C 17 TC = 100 °C 11 Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse Unit ID puls 51 EAS 670 EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation Ptot 208 W -55... +150 °C mJ ID=4A, V DD=50V Avalanche energy, repetitive t AR limited by Tjmax1) ID=17A, VDD=50V IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C TC = 25 °C Operating and storage temperature Tj , Tstg Page 1 2000-05-29 Preliminary data SPW17N80C2 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 - - 1.67 W/K - - 260 °C V Linear derating factor Soldering temperature, T sold K/W 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 800 - - V(BR)DS - 870 - VGS(th) 2 3 4 V GS=0V, ID=0.25mA Drain-source avalanche breakdown voltage V GS=0V, ID=17A Gate threshold voltage, VGS = VDS ID=1mA Zero gate voltage drain current µA I DSS V DS = 800 V, V GS = 0 V, T j = 25 °C - 0.5 25 V DS = 800 V, V GS = 0 V, T j = 150 °C - - 250 I GSS - - 100 nA RDS(on) - 250 290 mW RG - 0.7 - Gate-source leakage current V GS=20V, V DS=0V Drain-source on-state resistance V GS=10V, I D=11A, Tj=25°C Gate input resistance W f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV Page 2 2000-05-29 Preliminary data SPW17N80C2 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 15 - S pF Characteristics Transconductance g fs V DS³2*ID*R DS(on)max , ID=11A Input capacitance Ciss V GS=0V, VDS=25V, - 2320 - Output capacitance Coss f=1MHz - 1250 - Reverse transfer capacitance Crss - 60 - - 59 - - 124 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 640 V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=400V, VGS=0/10V, - 45 - Rise time tr ID=17A, R G=5.6W, - 17 - Turn-off delay time t d(off) T j=125°C - 77 88 Fall time tf - 10 13 - 9 - - 42 - - 83 107 - 6 - pF ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=640V, ID=17A VDD=640V, ID=17A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=17A V 1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss o(tr) Page 3 DS DSS 2000-05-29 Preliminary data SPW17N80C2 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 17 - - 51 Reverse Diode Inverse diode continuous IS TC=25°C A forward current I SM Inverse diode direct current, pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR=400V, I F=I S , - 550 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 13 - µC - 40 - A - 1200 - A/µs Peak reverse recovery current I rrm Peak rate of fall of reverse di rr/dt recovery current Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Transient thermal impedance Thermal resistance Thermal capacitance Rth1 0.00716 Rth2 Cth1 0.000441 0.01 Cth2 0.0014 Rth3 0.022 Cth3 0.000985 Rth4 0.065 Cth4 0.0045 Rth5 0.083 Cth5 0.02 Rth6 0.038 Cth6 0.146 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2000-05-29 Preliminary data SPW17N80C2 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ³ 10 V SPW17N80C2 SPW17N80C2 240 18 W A 200 14 160 12 ID Ptot 180 140 10 120 8 100 80 6 60 4 40 2 20 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 3 Safe operating area 4 Transient thermal impedance I D = f ( V DS ) ZthJC = f (tp ) parameter : D = 0 , T C=25°C parameter : D = tp /T 10 SPW17N80C2 10 1 tp = 6.7µs A 160 TC TC 2 °C SPW17N80C2 K/W 10 µs 10 -1 R DS ( ID on ) = 10 1 Z thJC V DS /I D 10 0 100 µs 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 0.02 10 ms 10 -4 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 VDS 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2000-05-29 Preliminary data SPW17N80C2 5 Typ. output characteristic 6 Typ. output characteristic I D = f (VDS); T j=25°C parameter: tp = 10 µs, V GS ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 35 70 20V 10V 8V 7V A 20V 10V 60 A 55 25 45 6.5V 6V ID ID 50 8V 20 40 7V 35 5.5V 15 30 25 6V 5V 10 20 15 4.5V 10 5 5V 4V 5 0 0 5 10 15 20 0 0 30 VDS 5 10 15 20 30 VDS V V 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj ) parameter: Tj=150°C, V GS parameter : ID = 11 A, VGS = 10 V SPW17N80C2 1.5 1.6 A W RDS(on) 1.3 ID 1.2 1.1 4V 4.5V 5V 5.5V 6V 1.0 6.5V 1.0 0.8 0.9 0.6 7V 8V 10V 20V 0.8 0.7 0.4 98% typ 0.2 0.6 0.5 0 1.2 5 10 15 20 25 VDS 35 0.0 -60 -20 20 60 100 °C 180 Tj V Page 6 2000-05-29 Preliminary data SPW17N80C2 9 Typ. transfer characteristics 10 Gate threshold voltage I D= f ( VGS ); V DS³ 2 x ID x R DS(on)max VGS(th) = f (Tj) parameter: tp = 10 µs parameter: VGS = VDS , ID = 1 mA 5.0 65 A V 25°C 55 4.0 V GS(th) 50 ID 45 40 35 150°C max. 3.5 3.0 typ. 2.5 30 25 2.0 20 1.5 15 min. 1.0 10 0.5 5 0 0 2 4 6 8 10 12 14 16 0.0 -60 V 20 VGS -20 20 60 100 °C 160 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (Q Gate) parameter: ID = 17 A pulsed IF = f (VSD ) parameter: Tj , tp = 10 µs SPW17N80C2 10 2 16 V SPW17N80C2 A 0,2 VDS max 10 10 1 0,8 VDS max IF VGS 12 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 nC 140 Q Gate 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 7 2000-05-29 Preliminary data SPW17N80C2 13 Avalanche SOA 14 Avalanche energy I AR = f (tAR) EAS = f (Tj ) par.: Tj £ 150 °C par.: ID = 4 A, VDD = 50 V 18 700 mJ A 600 550 E AS IAR 14 12 500 450 400 10 350 8 300 250 6 200 T j(START) =25°C 4 150 100 2 Tj (START) =125°C 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 25 4 50 75 100 150 °C Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR =0.5mJ SPW17N80C2 500 980 V W 400 920 900 P AR V(BR)DSS 940 880 350 300 860 250 840 820 200 800 150 780 100 760 50 740 720 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 MHz 10 6 f Page 8 2000-05-29 Preliminary data SPW17N80C2 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) parameter: V GS=0V, f=1 MHz 10 5 18 pF µJ 10 4 14 E oss C Ciss 10 3 12 10 10 2 8 Coss 6 4 Crss 10 1 2 10 0 0 100 200 300 400 500 600 V 800 VDS 0 0 100 200 300 400 500 600 V 800 VDS Definition of diodes switching characteristics Page 9 2000-05-29 Preliminary data SPW17N80C2 TO-247 dimensions symbol Page 10 [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G H 0.76 max 20.80 21.16 0.0299 max 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N ∅P 3.560 4.930 0.1402 0.1941 Q 6.12 6.22 0.1421 0.2409 0.2449 3.61 2000-05-29 Preliminary data SPW17N80C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2000-05-29