INFINEON BTS432I2

PROFET® BTS 432 I2
Smart Highside Power Switch
Features
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Product Summary
Load dump and reverse battery protection1)
VLoad dump
Clamp of negative voltage at output
Vbb-VOUT Avalanche
Short-circuit protection
Vbb (operation)
Current limitation
Vbb (reverse)
Thermal shutdown
RON
Diagnostic feedback
Open load detection in OFF-state
IL(SCp)
CMOS compatible input
IL(SCr)
Electrostatic discharge (ESD) protection
IL(ISO)
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-restart and
hysteresis
Application
Clamp
80
58
4.5 ... 42
-32
38
42
33
11
V
V
V
V
mΩ
A
A
A
5
5
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
1
Standard
SMD
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
R bb
+ Vbb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Infineon Technologies AG
Page 1 of 15
1999-02-19
BTS 432 I2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T j = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vs 3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
125
A
°C
1.7
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
≤1
≤ 75
≤ tbd
K/W
EAS
VESD
VIN
IIN
IST
63
66.5
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 2
1999-02-19
BTS 432 I2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 °C: RON
--
30
38
mΩ
IL(ISO)
9
55
11
70
--
A
IL(GNDhigh)
--
--
1
mA
ton
toff
50
10
160
--
300
80
µs
dV /dton
0.4
--
2.5
V/µs
-dV/dtoff
1
--
5
V/µs
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
42
42
-60
63
--0.2
-67
52
----
V
V
V
V
Tj=150 °C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, V IN = 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection6)
Tj =-40°C:
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3)
VIN =0, IST=0,
Tj=-40...+25°C :
Tj=150°C:
Operating current (Pin 1)7), VIN =5 V
5)
6)
7)
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
µA
Ibb(off)
IGND
---
40
50
70
110
--
1.1
--
mA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST , if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
Page 3
1999-02-19
BTS 432 I2
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
IL(SCp)
( max 400 µs if V ON > V ON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
--22
-42
--
72
---
A
20
33
--
A
80
--
400
µs
VON(CL)
--
58
--
V
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---1.7
1.3
1.0
V
°C
K
J
Integrated resistor in V bb line
-Vbb
Rbb
---
-120
32
--
V
Ω
Diagnostic Characteristics
Open load detection current
IL(off)
10
30
60
µA
2
3
4
V
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at V OUT = V bb - V ON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Open load detection voltage
Tj=-40..150°C:
VOUT(OL)
)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL (t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8
VON(CL) - Vbb
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these
condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external
GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
9)
Infineon Technologies AG
Page 4
1999-02-19
BTS 432 I2
Input and Status Feedback11)
Input turn-on threshold voltage
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
-1
0.5
--
-30
V
µA
10
25
50
µA
td(ST OL3)
40
--
300
µs
td(ST SC)
80
200
400
µs
VST(high)12)
VST(low)
-IST
+IST13)
4.4
----
5.1
----
6.5
0.4
0.25
1.6
V
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2)
∆ VIN(T)
VIN = 0.4 V: IIN(off)
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 12)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA:
Tj =-40...+150°C, IST = +1.6 mA:
Max. status current for
current source (out):
valid status output,
current sink (in) :
Tj =-40...+150°C
mA
11) If a ground resistor R
GND is used, add the voltage drop across this resistor.
12) V
≈
V
during
undervoltage shutdown
St high
bb
13) No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 5
1999-02-19
BTS 432 I2
Truth Table
Input-
Output
level
level
432
D2
432
E2/F2
432
I2
Normal
operation
Open load
L
H
L
H
L
H
H
H
H
L
H
H
H
L
H
H
L
H
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
L
H
L
H
L
H
L
H
L
H
H
L
H
H (L15))
L
L
H
L
H
H (L15))
L
L
H
H
H
H
H
L
L
H
L
L
Overvoltage
Status
14)
H
L
L
H
H
L
L
L
L
L
L
L16)
L16)
L
L
L16)
L16)
L
L
L = "Low" Level
H = "High" Level
Terms
Status output
Ibb
VLogic
3
I IN
Vbb
IN
ST
2
IL
V
VST
IN
OUT
PROFET
I ST
4
VON
5
ST
GND
GND
V
bb
1
R
IGND
VOUT
GND
ESDZD
Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,
ESD zener diodes are not designed for continuous
current
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Input circuit (ESD protection)
R
IN
+ V bb
I
ESDZDI1 ZDI2
V
ON
I
I
OUT
GND
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
Logic
unit
Short circuit
detection
14) Power Transistor off, high impedance
15) Low resistance short V to output may be detected by no-load-detection
bb
16) No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 6
1999-02-19
BTS 432 I2
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
Z
3
V
ON
Vbb
IN
2
PROFET
OUT
OUT
4
GND
V
VON clamped to 58 V typ.
Overvolt. and reverse batt. protection
GND
1
IN V ST
VGND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
+ V bb
R IN
bb
V
5
ST
GND disconnect with GND pull up
R bb
VZ
3
IN
Logic
V
R ST ST
2
IN
Vbb
OUT
PROFET
GND
PROFET
4
OUT
5
ST
GND
RGND
1
Signal GND
Rbb = 120 Ω typ., VZ +Rbb *40 mA = 67 V typ., add
RGND, RIN , RST for extended protection
V
V
bb
V
IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Vbb disconnect with charged inductive
load
3
high
2
OFF
I
Vbb
PROFET
L(OL)
4
Logic
unit
IN
Open load
detection
V
OUT
5
ST
GND
1
OUT
V
bb
Signal GND
Infineon Technologies AG
Page 7
1999-02-19
BTS 432 I2
Inductive Load switch-off energy
dissipation
3
high
2
IN
E AS
PROFET
4
E bb
Vbb
OUT
5
E
ST
IN
GND
1
PROFET
=
V
V bb
bb
ST
GND
Load
OUT
EL
ER
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
ELoad < EL, EL = 1/2 * L * I L
Infineon Technologies AG
Page 8
1999-02-19
BTS 432 I2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 432D2 432E2 432F2 432I2
Overtemperature protection
Tj >150 °C, latch function17)18)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ. 17)
(when first turned on after approx. 200 µs)
D
E
X
F
I
X
X
X
X
X
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Status feedback for
overtemperature
short circuit to GND
X
X
X
X
-19)
-19)
-19)
X
open load
X
X
X
X
undervoltage
X
-
-
X
overvoltage
X
-
-
X
short to Vbb
Status output type
CMOS
X
X
X
X
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
X
medium level
X
low level (better protection of application)
17) Latch except when V -V
bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
19) Low resistance short V to output may be detected by no-load-detection
bb
Infineon Technologies AG
Page 9
1999-02-19
BTS 432 I2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
IN
t d(bb IN)
V
bb
ST
V
OUT
V
OUT
A
ST CMOS
I
L
t
A
t
in case of too early VIN=high the device may not turn on (curve
A)
td(bb IN) approx. 150 µs
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
V
OUT
VOUT
td(SC)
I
I
L
L
t
t
td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.
Infineon Technologies AG
Page 10
1999-02-19
BTS 432 I2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
IN
IL
ST
I L(SCp)
I L(SCr)
V
ST
OUT
T
J
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
*) ST goes high , when VIN=low and Tj<T jt
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
IN
IN
ST
t
d(ST OL1)
t d(OL ST2)
ST
V OUT
V
OUT
IL
**)
normal
I
open
normal
L
t
**) current peak approx. 20 µs
t
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Infineon Technologies AG
Page 11
1999-02-19
BTS 432 I2
Figure 5b: Open load: detection in OFF-state, turn
on/off to open load
Figure 6a: Undervoltage:
IN
IN
Vbb
td(ST OL3)
ST
Vbb(u cp)
Vbb(u rst)
V
bb(under)
VOUT
V OUT
I
L
ST CMOS
normal
open
t
*)
in case of external capacity td(ST,OL3) may be higher due to high
impedance
*) IL = 30 µA typ
t
Figure 6b: Undervoltage restart of charge pump
VON [V]
VON(CL)
V on
Figure 5c: Open load: detection in OFF-state, open
load occurs in off-state
off
IN
ST
V
off
V
V
V
bb(u rst)
OUT
V
V
I
L
normal
load
open
load
bb(under)
bb(over)
bb(o rst)
bb(u cp)
on
normal
load
V bb
Vbb [V]
*)
*)
t
charge pump starts at Vbb(ucp) =6.5 V typ.
*) IL = 30 µA typ
Infineon Technologies AG
Page 12
1999-02-19
BTS 432 I2
Figure 7a: Overvoltage:
IN
Vbb
V
V
ON(CL)
Vbb(over)
V
bb(o rst)
OUT
ST
t
Infineon Technologies AG
Page 13
1999-02-19
BTS 432 I2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 432 I2
Infineon Technologies AG
SMD TO-220AB/5, Opt. E3122 Ordering code
Ordering code
Q67060-S6204-A2
BTS 432 I2 E3122A T&R:
Page 14
Q67060-S6204-A3
1999-02-19
BTS 432 I2
Published by Infineon Technologies AG
Balanstraße 73, D-81541 München
 Infineon Technologies AG 2002. All Rights Reserved
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liability is only assumed for components, not for applications,
processes and circuits implemented within components or
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Components used in life-support devices or systems must be
expressly authorised for such purpose! Critical components 20)
of Infineon Technologies AG, may only be used in life supporting
devices or systems 21) with the express written approval of Infineon
Technologies AG.
20) A critical component is a component used in a life-support
device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
21) Life support devices or systems are intended (a) to be
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and sustain and/or protect human life. If they fail, it is
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Infineon Technologies AG
Page 15
1999-02-19