SPD03N60C3 SPU03N60C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPD03N60C3 P-TO252 Q67040-S4421 03N60C3 SPU03N60C3 P-TO251 - 03N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 3.2 TC = 100 °C 2 Pulsed drain current, tp limited by Tjmax I D puls 9.6 Avalanche energy, single pulse EAS 100 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.2 mJ I D = 2.4 A, VDD = 50 V I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 3.2 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 38 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-10-02 SPD03N60C3 SPU03N60C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area 2) - - 50 - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=135µΑ, VGS=VDS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 70 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=2A, Tj=25°C - 1.26 1.4 Tj=150°C - 3.8 - f=1MHz, open Drain - 10 - Page 2 nA 2003-10-02 SPD03N60C3 SPU03N60C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 3.4 - S pF ID=2A Input capacitance Ciss V GS=0V, V DS=25V, - 400 - Output capacitance Coss f=1MHz - 150 - Reverse transfer capacitance Crss - 5 - - 12 - - 26 - Effective output capacitance, 3) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 4) Co(tr) pF time related Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 7 - Rise time tr ID=3.2A, RG=20Ω - 3 - Turn-off delay time td(off) - 64 100 Fall time tf - 12 20 - 2 - - 6 - - 13 17 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=420V, ID=3.2A V DD=420V, ID=3.2A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=420V, ID=3.2A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-10-02 SPD03N60C3 SPU03N60C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 3.2 - - 9.6 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =420V, IF=IS , - 250 400 ns Reverse recovery charge Q rr diF/dt=100A/µs - 1.8 - µC Peak reverse recovery current I rrm - 15 - A Peak rate of fall of reverse di rr/dt - - 540 A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.054 Rth2 Cth1 0.00005232 0.103 Cth2 0.0002034 Rth3 0.178 Cth3 0.0002963 Rth4 0.757 Cth4 0.0009103 Rth5 0.682 Cth5 0.002084 Rth6 0.202 Cth6 0.024 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-10-02 SPD03N60C3 SPU03N60C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 40 10 1 SPD03N60C3 W A 32 10 0 ID Ptot 28 24 20 16 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 12 8 4 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 1 10 11 A K/W 9 10 0 ID ZthJC 8 7 6 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 20V 7V 6.5V 6V 5.5V 5V 4.5V 4V 5 4 3 2 1 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 4 8 12 16 V 24 VDS Page 5 2003-10-02 3 SPD03N60C3 SPU03N60C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 10 6 4V 4.5V 5V 5.5V 6V 6.5V 8V 20V 8 RDS(on) 4 ID Ω 20V 7V 6V 5.5V 5V 4.5V 4V 3.5V A 7 6 3 5 4 2 3 1 2 0 0 4 8 12 16 V 1 0 24 1 2 3 4 5 A ID 6 VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 2 A, VGS = 10 V parameter: tp = 10 µs 8 SPD03N60C3 8 11 A Ω 25°C 8 ID RDS(on) 9 6 5 7 150°C 6 4 5 3 4 2 3 98% 2 typ 1 0 -60 1 -20 20 60 100 °C 180 Tj Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2003-10-02 SPD03N60C3 SPU03N60C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 3.2 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPD03N60C3 V SPD03N60C3 A 10 0 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 10 -2 0 20 0.4 0.8 1.2 1.6 2 2.4 V QGate 11 Typ. drain current slope 12 Typ. switching time di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, ID=3.2A par.: V DS=380V, VGS=0/+13V, ID=3.2 A 1500 500 A/µs ns 1200 400 1050 350 900 300 t di/dt 3 VSD 750 250 600 200 450 td(off) tf td(on) tr 150 di/dt(on) 300 100 150 0 0 50 di/dt(off) 40 80 120 160 220 Ω RG Page 7 0 0 20 40 60 80 100 120 140 160 Ω 200 RG 2003-10-02 SPD03N60C3 SPU03N60C3 Final data 13 Typ. switching time 14 Typ. drain source voltage slope t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, RG =20Ω par.: V DS=380V, VGS=0/+13V, ID=3.2A 100 90 ns V/ns 80 70 dv/dt t 70 60 60 50 50 40 40 td(off) tf td(on) tr 30 30 20 20 dv/dt(off) 10 10 0 0 dv/dt(on) 0.5 1 1.5 2 2.5 A 0 0 3.5 20 40 60 80 100 120 140 160 ID Ω 200 RG 15 Typ. switching losses 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =20Ω par.: V DS=380V, VGS=0/+13V, ID=3.2A 0.01 mWs 0.06 *) Eon includes SDP06S60 mWs diode commutation losses. *) E on includes SDP06S60 diode commutation losses. 0.008 0.048 0.007 0.042 Eon* 0.006 E E Eoff 0.036 Eon* 0.005 0.03 Eoff 0.004 0.024 0.003 0.018 0.002 0.012 0.001 0.006 0 0 0.5 1 1.5 2 2.5 A 3.5 ID Page 8 0 0 40 80 120 160 220 Ω RG 2003-10-02 SPD03N60C3 SPU03N60C3 Final data 17 Avalanche SOA 18 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 2.4 A, V DD = 50 V 3.5 120 A mJ Tj(START) =25°C IAR EAS 2.5 80 2 60 1.5 Tj(START) =125°C 40 1 20 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 20 4 40 60 80 100 120 °C 160 Tj 19 Drain-source breakdown voltage 20 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.2mJ 720 SPD03N60C3 200 W 160 680 PAR V(BR)DSS V 660 140 120 640 100 620 80 600 60 580 40 560 540 -60 20 -20 20 60 100 °C 180 Tj 0 4 10 10 5 Hz 10 f Page 9 2003-10-02 6 SPD03N60C3 SPU03N60C3 Final data 21 Typ. capacitances 22 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 2.5 pF µJ 10 3 C Eoss Ciss 1.5 10 2 Coss 1 10 1 0.5 Crss 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 10 2003-10-02 SPD03N60C3 SPU03N60C3 Final data P-TO-252-3-1 (D-PAK) P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.9 +0.08 -0.04 0.15 max per side 9.3 ±0.4 C B 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 0.5 +0.08 -0.04 3 x 0.75 ±0.1 2.28 4.56 1.0 0.25 M A B C GPT09050 All metal surfaces tin plated, except area of cut. Page 11 2003-10-02 Final data SPD03N60C3 SPU03N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-10-02