Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS(on) 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 1 2 P-TO263-3-2 P-TO220-3-1 3 P-TO220-3-31 Type Package Ordering Code Marking SPP11N60C2 P-TO220-3-1 Q67040-S4295 11N60C2 SPB11N60C2 P-TO263-3-2 Q67040-S4298 11N60C2 SPA11N60C2 P-TO220-3-31 Q67040-S4332 11N60C2 Maximum Ratings Parameter Symbol Value SPP_B Continuous drain current Unit SPA A ID TC = 25 °C 11 111) TC = 100 °C 7 71) 22 22 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 340 340 EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Reverse diode dv/dt dv/dt 6 6 V/ns Gate source voltage VGS ±20 ±20 Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 Operating and storage temperature Tj , Tstg mJ ID =5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V IS = 11 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C Page 1 -55...+150 V W °C 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 Thremal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - Linear derating factor - - 1 Linear derating factor, FullPAK - - 0.26 - - 260 °C V Soldering temperature, Tsold K/W W/K 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID =0.5mA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - - 25 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 250 IGSS - - 100 nA RDS(on) - 0.34 0.38 Ω RG - 0.86 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=7A, Tj=25°C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 3 6 - S pF Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =7A Input capacitance Ciss VGS =0V, VDS =25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - - 45 - - 85 - Effective output capacitance, 4) Co(er) VGS =0V, energy related VDS =0V to 480V Effective output capacitance, 5) Co(tr) time related Turn-on delay time td(on) VDD =380V, VGS =0/13V, - 13 - Rise time tr ID =11A, - 40 - Turn-off delay time td(off) RG=6.8Ω, Tj=125°C - 48 72 Fall time tf - 9 13.5 - 10.5 - - 24 - - 41.5 54 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =11A VDD =350V, ID =11A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data Electrical Characteristics Symbol Parameter Conditions Values Unit min. typ. max. - - 11 - - 22 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =350V, IF =IS , - 650 1105 ns Reverse recovery charge Qrr diF /dt=100A/µs - 7.9 - µC Peak reverse recovery current Irrm - 30 - A Peak rate of fall of reverse dirr /dt - 600 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_B SPA Rth1 0.015 0.015 Rth2 0.034 Rth3 Symbol Value Unit SPP_B SPA Cth1 0.0002121 0.00012 0.03 Cth2 0.0007091 0.000455 0.042 0.043 Cth3 0.001184 0.000638 Rth4 0.116 0.119 Cth4 0.001527 0.00144 Rth5 0.149 0.35 Cth5 0.011 0.00737 Rth6 0.059 2.499 Cth6 0.089 0.412 R th1 R th,n Tj K/W T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 1 Power dissipation 2 Power dissiaption FullPAK Ptot = f (TC ) Ptot = f (TC ) SPP11N60C2 35 140 W W 120 110 25 P tot Ptot 100 90 20 80 70 15 60 50 10 40 30 5 20 10 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS ) parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2002-08-12 3 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp ) ZthJC = f (tp ) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 ZthJC K/W K/W 10 0 10 0 10 -1 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 10 -4 -7 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 Helvetica tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 35 18 20V 20V 12V 10V A A 12V 9V 14 10V 25 ID ID 8V 20 12 10 9V 8 15 7V 8V 6 10 4 6V 7V 5 2 6V 0 0 5 10 15 25 V VDS 0 0 5 10 15 25 V VDS Page 6 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150°C, VGS parameter : ID = 7 A, VGS = 10 V 2 2.1 SPP11N60C2 Ω Ω RDS(on) RDS(on) 1.8 1.6 1.4 1.2 20V 12V 10V 9V 8V 7V 6V 1 0.5 1 0.8 0.6 98% 0.4 typ 0.2 0 0 2 4 6 8 10 12 14 A ID 0 -60 18 -20 20 ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs VGS = f (QGate) 32 16 A V 24 12 25 °C 150 °C 8 12 6 8 4 4 2 8 12 V 180 20 VGS SPP11N60C2 0,2 VDS max 0,8 VDS max 10 16 4 °C parameter: ID = 11 A pulsed V GS ID 12 Typ. gate charge 0 0 100 Tj 11 Typ. transfer characteristics 20 60 0 0 10 20 30 40 50 nC 65 QGate Page 7 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD ) t = f (ID), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS=380V, VGS=0/+13V, RG =6.8Ω 10 2 10 3 SPP11N60C2 ns A tr 10 2 t IF 10 1 td(off) tf 10 0 10 1 Tj = 25 °C typ td(on) Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2.4 V 2 10 0 0 3 5 10 15 20 30 A ID VSD 15 Typ. switching time 16 Typ. switching losses t = f (RG), inductive load, Tj =125°C E = f (ID ), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=11 A par.: VDS=380V, VGS=0/+13V, RG =6.8Ω 10 3 0.7 mWs ns *) Eon includes SDP06S60 diode commutation losses. td(off) td(on) 0.5 t E 10 2 tr 0.4 tf 0.3 10 1 Eoff 0.2 Eon* 0.1 10 0 0 10 20 30 40 50 Ω 70 RG 0 0 5 10 15 25 A ID Page 8 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 17 Typ. switching losses 18 Avalanche SOA E = f(RG ), inductive load, Tj =125°C IAR = f (tAR ) par.: VDS=380V, VGS=0/+13V,ID =11A par.: Tj ≤ 150 °C 0.4 11 *) E on includes SDP06S60 diode commutation losses. A 9 mWs E IAR 8 Eoff 0.2 7 6 Eon* 5 Tj (START) =25°C 4 3 0.1 Tj (START) =125°C 2 1 0 0 10 20 30 40 50 Ω 0 -3 10 70 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR RG 19 Avalanche energy 20 Drain-source breakdown voltage EAS = f (Tj ) V(BR)DSS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V SPP11N60C2 350 720 V V (BR)DSS mJ E AS 250 200 680 660 640 620 150 600 100 580 50 560 0 20 40 60 80 100 120 °C 160 Tj 540 -60 -20 20 60 100 °C 180 Tj Page 9 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data 21 Avalanche power losses 22 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.6mJ parameter: VGS =0V, f=1 MHz 10 4 300 pF W Ciss 200 C P AR 10 3 10 2 150 Coss 100 10 1 Crss 10 0 0 100 50 0 4 10 10 5 10 Hz 6 200 300 400 V 600 VDS f 23 Typ. Coss stored energy Eoss=f(VDS ) 7.5 µJ 6 E oss 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 10 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Definition of diodes switching characteristics Page 11 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data P-TO-220-3-1 B 10 ±0.4 3.7 ±0.2 4.44 A 13.5 ±0.5 C 9.98 ±0.48 0.05 5.23 ±0.9 15.38 ±0.6 2.8 ±0.2 1.27±0.13 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 ±0.2 1.27 ±0.1 B 0.1 A 8.5 1) 0.05 2.4 2.7 ±0.3 4.7 ±0.5 7.55 1) (15) 9.25 ±0.2 1 ±0.3 0...0.3 0...0.15 0.75 ±0.1 0.5 ±0.1 1.05 8 ˚ MAX. 2.54 5.08 1) 0.25 M A B 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 Page 12 2002-08-12 SPP11N60C2, SPB11N60C2 SPA11N60C2 Final data P-TO-220-3-31 (FullPAK) 10.5 ±0.005 6.1 ±0.002 4.7 ±0.005 2.7 ±0.005 1 2 3 3.3 ±0.005 13.6 ±0.005 9.68 ±0.005 12.79 ±0.005 14.1 ±0.005 15.99 ±0.005 7˚ 1.5 ±0.001 1.28 +0.003 -0.002 0.5 +0.005 -0.002 0.7 +0.003 -0.002 2.57 ±0.002 2.54 Please refer to mounting instructions (application note AN-TO220-3-31-01) Page 13 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2002-08-12