BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 40 B 500 V 8.5 A 0.8 Ω TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 35 °C Values Unit A 8.5 IDpuls Pulsed drain current TC = 25 °C 34 Avalanche current,limited by Tjmax IAR 10 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 13 mJ EAS ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C 570 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 150 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.83 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 500 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 5.5 A Semiconductor Group nA - 2 0.6 0.8 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 5.5 A Input capacitance 5 pF - 1500 2300 - 180 270 - 65 100 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 20 30 - 70 110 - 260 340 - 80 100 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 34 V 1.1 1.3 trr ns - 380 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 8.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 20 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 4 - 07/96 BUZ 40 B Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 9 160 A W Ptot ID 7 120 6 100 5 80 4 60 3 40 2 20 1 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 0 t = 6.4µs p 10 µs A K/W ID ZthJC 100 µs 10 -1 /I D 10 1 DS (o n) =V DS 1 ms 10 ms R D = 0.50 0.20 10 0 10 -2 0.10 0.05 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 40 B Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 19 2.6 Ptot = 150W kj i h g l A Ω f 16 14 12 d 10 8 c 6 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 RDS (on) l d 2.0 1.6 1.4 1.2 20.0 1.0 e 0.8 g f h i j 0.6 k b 0.4 2 VGS [V] = a 4.0 4.5 0.2 a 0 0 c 1.8 k 10.0 4 b 2.2 e VGS [V] ID a b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 20 24 28 V 34 0 2 4 6 8 10 12 14 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max ID 18 ID 10 12 A S 10 8 gfs 9 7 8 6 7 5 6 4 5 4 3 3 2 2 1 0 0 1 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 1 2 3 4 5 6 7 A ID 07/96 9 BUZ 40 B Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 5.5 A, VGS = 10 V 3.4 4.6 Ω V 98% 4.0 RDS (on) 2.8 VGS(th) 2.4 3.6 typ 3.2 2.8 2.0 2.4 1.6 2% 2.0 98% 1.2 1.6 typ 1.2 0.8 0.8 0.4 0.4 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss 10 -1 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 40 B Avalanche energy EAS = ƒ(Tj ) parameter: ID = 10 A, VDD = 50 V RGS = 25 Ω, L = 10.3 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 12 A 600 16 mJ V 500 EAS VGS 450 12 400 10 350 300 0,2 VDS max 8 0,8 VDS max 250 6 200 150 4 100 2 50 0 20 0 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 600 V 580 V(BR)DSS570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 110 BUZ 40 B Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96