BSP 318 S SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Ω SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings Parameter Symbol Continuous drain current ID Values A TA = 25 °C 2.6 TA = 100 °C 1.7 DC drain current, pulsed Unit IDpuls TA = 25 °C 10.4 Avalanche energy, single pulse mJ E AS ID = 2.6 A, V DD = 25 V, RGS = 25 Ω L = 10 mH, Tj = 25 °C 60 Avalanche energy, periodic limited by Tj(max) E AR 0.18 Avalanche current, repetitive,limited by Tj(max) IAR 2.6 Reverse diode dv /dt dv /dt A KV/µs IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C 6 Gate source voltage V GS Power dissipation P tot TA = 25 °C Semiconductor Group ± 14 V W 1.8 1 29/01/1998 BSP 318 S Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 Thermal resistance, junction-soldering point 1) RthJS 17 IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection *) MIL STD 883, Method 3015, Class 2 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 60 - - 1.2 1.6 2 V GS(th) V GS=V DS, ID = 20 µA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 60 V, V GS = 0 V, Tj = -40 °C - - 0.1 V DS = 60 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 60 V, V GS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-state resistance nA IGSS - 10 100 Ω RDS(on) V GS = 4.5 V, ID = 2.6 A - 0.12 0.15 V GS = 10 V, ID = 2.6 A - 0.07 0.09 Semiconductor Group 2 29/01/1998 BSP 318 S Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 2.6 A Input capacitance 2.4 pF - 300 380 - 90 120 - 50 65 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 5.6 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 Ω Rise time - 12 20 - 15 25 - 20 30 - 15 25 tr V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 Ω Fall time tf V DD = 30 V, VGS = 4.5 V, ID = 2.6 A RG = 16 Ω Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS 0 to 1 V Gate Charge at 5.0 V 0.6 - 7 10 - 14 20 V V (plateau) V DS = 40 V, ID = 2.6 A Semiconductor Group 0.4 Qg(total) V DD = 40 V, ID = 2.6 A, V GS 0 to 10 V Gate plateau voltage Qg(5) V DD = 40 V, ID = 2.6 A, V GS 0 to 5 V Gate Charge total nC Qg(th) - 3 3.6 - 29/01/1998 BSP 318 S Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TA = 25 °C Inverse diode direct current,pulsed - - 10.4 V 0.95 1.2 ns trr - 50 75 µC Qrr V R = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 2.6 - V R = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 5.2 A Reverse recovery time ISM TA = 25 °C Inverse diode forward voltage A IS - 4 0.1 0.15 29/01/1998 BSP 318 S Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 4 V 2.0 2.8 A W 2.4 Ptot 1.6 ID 2.2 2.0 1.4 1.8 1.2 1.6 1.0 1.4 1.2 0.8 1.0 0.6 0.8 0.4 0.6 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 29/01/1998 BSP 318 S Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 6.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.45 Ptot = 2W A jihgf e d lk b Ω VGS [V] a 2.5 5.0 ID a 4.5 c 4.0 3.5 3.0 2.5 2.0 1.5 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 b l 10.0 RDS (on)0.35 0.30 0.25 0.20 c 0.15 d e f ik gh j 0.10 1.0 0.05 0.5 a 0.0 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 i h 6.5 7.0 j 8.0 k 10.0 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 15 A 13 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 29/01/1998 BSP 318 S Gate threshold voltage Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 2.6 A, VGS = 4.5 V V GS(th) = f ( Tj ) parameter:VGS=V DS,ID = 20 µA 0.38 3.0 Ω V 0.32 2.6 RDS (on) VGS(th) 0.28 2.4 2.2 2.0 0.24 1.8 0.20 1.6 98% 1.4 0.16 typ 1.2 1.0 0.12 max 0.8 0.08 0.6 typ 0.4 0.04 0.2 0.0 0.00 -60 -20 20 60 100 °C 160 -60 min -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 2 A C IF pF Ciss 10 1 10 2 Coss 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 29/01/1998 BSP 318 S Avalanche energy EAS = ƒ(Tj) parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω, L = 10 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 3 A 65 16 mJ V 55 EAS VGS 50 12 45 10 40 35 8 30 0,2 VDS max 25 0,8 VDS max 6 20 4 15 10 2 5 0 20 0 40 60 80 100 120 °C 160 Tj 0 4 8 12 16 22 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 29/01/1998