INFINEON BSP223

BSP 223
Preliminary data
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1
G
Pin 2
Pin 3
D
Type
VDS
ID
RDS(on)
Package
Marking
BSP 223
600 V
0.38 A
5Ω
SOT-223
BSP 223
Pin 4
S
D
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Values
Unit
A
0.38
TA = 25 °C
DC drain current, pulsed
IDpuls
TA = 25 °C
1.52
Avalanche energy, single pulse
mJ
E AS
ID = 1.4 A, VDD = 50 V, RGS = 25 Ω
L = 122 mH, Tj = 25 °C
130
Gate source voltage
V GS
Power dissipation
P tot
TA = 25 °C
Semiconductor Group
± 20
V
W
1.8
1
25/09/1997
BSP 223
Preliminary data
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 70
Thermal resistance, junction-soldering point 1)
RthJS
≤ 10
Values
IEC climatic category, DIN IEC 68-1
Unit
°C
K/W
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
600
-
-
2.1
3
4
V GS(th)
V GS=V DS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
V DS = 600 V, V GS = 0 V, Tj = 25 °C
-
0.1
1
V DS = 600 V, V GS = 0 V, Tj = 125 °C
-
10
100
Gate-source leakage current
V GS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
10
100
Ω
RDS(on)
V GS = 10 V, ID = 0.38 A
Semiconductor Group
nA
IGSS
-
2
4
5
25/09/1997
BSP 223
Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
V DS≥ 2 * ID * RDS(on)max, ID = 0.38 A
Input capacitance
0.2
pF
-
300
400
-
40
60
-
15
25
Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
0.8
Ciss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
S
gfs
ns
td(on)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Rise time
-
8
12
-
12
18
-
45
65
-
25
40
tr
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Turn-off delay time
td(off)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Fall time
tf
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RG = 50 Ω
Gate charge at threshold
V DD = 40 V, ID ≥ 0.1 A, V GS 0 to 1 V
Gate Charge at 7.0 V
0.6
-
13
20
-
16
25
V
V (plateau)
V DS = 15 V, ID = 0.4 A
Semiconductor Group
0.4
Qg(total)
V DD = 40 V, ID = 0.4 A, V GS 0 to 10 V
Gate plateau voltage
Qg(7)
V DD = 40 V, ID = 0.4 A, V GS 0 to 7 V
Gate Charge total
nC
Qg(th)
-
3
4.4
-
25/09/1997
BSP 223
Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
Inverse diode direct current,pulsed
-
-
1.52
V
0.85
1.2
ns
trr
-
200
300
µC
Qrr
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
0.38
-
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
V SD
V GS = 0 V, IF = 0.76 A
Reverse recovery time
ISM
TA = 25 °C
Inverse diode forward voltage
A
IS
-
4
0.65
1
25/09/1997
BSP 223
Preliminary data
Power dissipation
Ptot = ƒ(TA)
Ptot
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
2.0
0.40
W
A
1.6
ID
0.32
1.4
0.28
1.2
0.24
1.0
0.20
0.8
0.16
0.6
0.12
0.4
0.08
0.2
0.04
0.0
0
20
40
60
80
100
120
°C
0.00
0
160
20
40
60
80
100
TA
120
°C
160
TA
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
Transient thermal impedance
Zth JA = ƒ(tp )
parameter: D = tp / T
10 1
10 2
K/W
A
/I
D
10 1
DS
V
=
ZthJC
1 ms
DS
(o
n)
10 0
10 0
R
ID
t = 340.0µs
p
10 ms
10 -1
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
10 -2
single pulse
10 -4
0.02
0.01
DC
10 -3
0
10
10
1
10
2
V 10
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
3
VDS
Semiconductor Group
tp
5
25/09/1997
BSP 223
Preliminary data
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
0.9
kji
f
hg e d
A
ID
16
l
Ptot = 2W
a
Ω
c
VGS [V]
a 4.0
0.7
RDS (on)
b 4.5
12
c 5.0
0.6
d 5.5
10
e 6.0
0.5
f
6.5
b g 7.0
b
8
h 7.5
0.4
0.3
i
8.0
j
8.5
6
c
d
k 9.0
l 10.0
h
k j
4
0.2
a
2 VGS [V] =
0.1
a
4.0
4.5
0.0
0
2
4
6
8
10
12
e
f g
i
14
V
17
VDS
b
5.0
c
5.5
d
6.0
e
f
6.5 7.0
g
7.5
h
i
8.0 8.5
j
9.0
0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
k
10.0
A
0.50
ID
Typ. transfer characteristics ID = f( VGS)
parameter: tp = 80 µs
V DS≥ 2 x ID x RDS(on)max
1.8
A
ID
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
25/09/1997
BSP 223
Preliminary data
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 0.38 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
13
4.6
Ω
V
11
RDS (on)
98%
4.0
VGS(th)
10
9
3.6
typ
3.2
8
2.8
7
98%
2.4
typ
2.0
2%
6
5
1.6
4
3
1.2
2
0.8
1
0.4
0
-60
-20
20
60
100
°C
0.0
-60
160
Tj
-20
20
60
100
°C
160
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 4
10 1
pF
A
IF
C
10 3
10 0
Ciss
10 2
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Coss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
Crss
5
10
15
20
25
30
V
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
VDS
Semiconductor Group
10 -2
0.0
7
25/09/1997
BSP 223
Preliminary data
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.4 A, VDD = 50 V
RGS = 25 Ω, L = 122 mH
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 0 A
16
140
mJ
V
120
EAS
VGS
110
12
100
90
10
80
8
70
0,2 VDS max
0,8 VDS max
60
6
50
40
4
30
20
10
0
20
2
0
40
60
80
100
120
°C
160
Tj
0
2
4
6
8
10
12
14
16
nC
20
Q Gate
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
25/09/1997