BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 50 V 29 A 0.06 Ω TO-220 AB C67078-S1350-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 31 °C Values Unit A 29 IDpuls Pulsed drain current TC = 25 °C 116 EAS Avalanche energy, single pulse mJ ID = 29 A, VDD = 25 V, RGS = 25 Ω L = 83 µH, Tj = 25 °C 70 Reverse diode dv/dt dv/dt kV/µs IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 100 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 1.5 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 07/96 BUZ 101 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = -40 °C V 50 - - 2.1 3 4 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 °C - 10 100 µA Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 21 A Semiconductor Group nA - 2 0.036 0.06 07/96 BUZ 101 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 21 A Input capacitance 7 pF - 680 900 - 240 360 - 90 135 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 13.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 15 23 - 55 85 - 100 135 - 70 95 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 101 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 116 V 1.2 2 trr ns - 60 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 29 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 58 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.12 - 07/96 BUZ 101 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 30 110 A W 26 Ptot 90 ID 24 22 80 20 70 18 60 16 14 50 12 40 10 8 30 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 °C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 180 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 3 K/W A ID ZthJC 10 0 t = 11.0µs p 10 2 /ID = V D S 100 µs 10 -1 ) on S( RD D = 0.50 0.20 1 ms 10 1 0.10 0.05 10 -2 10 ms 0.02 0.01 single pulse DC 10 0 10 0 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 101 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 65 0.19 Ptot = 100W l A k Ω j 55 ID VGS [V] i 50 45 40 0.16 RDS (on) 0.14 4.5 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 f 25 4.0 b 35 30 a h c g e 20 b c d e f g h 0.12 0.10 0.08 0.06 k 10.0 d a i l 20.0 15 j 0.04 c 10 k 0.02 b 5 a 0 0.0 1.0 2.0 3.0 4.0 V 0.00 0 5.5 VGS [V] = a 4.0 4.5 b 5.0 10 c 5.5 d 6.0 e f 6.5 7.0 20 30 g 7.5 h i j k 8.0 9.0 10.0 20.0 40 VDS A 60 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 60 15 A S 13 50 ID gfs 45 12 11 40 10 35 9 8 30 7 25 6 20 5 15 4 3 10 2 5 0 0 1 0 1 2 3 Semiconductor Group 4 5 6 7 8 V 10 VGS 6 0 10 20 30 40 A 60 ID 07/96 BUZ 101 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 21 A, VGS = 10 V 0.17 4.6 Ω V 98% 4.0 0.14 RDS (on) VGS(th) 0.12 3.6 3.2 typ 2.8 0.10 2.4 2% 98% 0.08 2.0 1.6 0.06 typ 1.2 0.04 0.8 0.02 0.00 -60 0.4 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj Typ. capacitances 180 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 pF A IF C 10 3 10 2 Ciss Coss 10 2 10 1 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 101 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 29 A, VDD = 25 V RGS = 25 Ω, L = 83 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 44 A 16 75 mJ V 65 EAS VGS 60 55 12 0,2 VDS max 0,8 VDS max 50 10 45 40 8 35 30 6 25 20 4 15 10 5 0 20 2 0 40 60 80 100 120 140 °C 180 Tj 0 5 10 15 20 25 30 35 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 07/96 45 BUZ 101 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96