TEMPFET BTS 240A Features ● ● ● ● N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S 2 Type VDS ID RDS(on) Package Ordering Code BTS 240A 50 V 58 A 0.018 Ω TO-218AA C67078-A5100-A3 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 kΩ VDGR 50 Gate-source voltage VGS ± 20 Continuous drain current, TC = 73 °C ID 58 ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V ID-ISO 21.0 A Pulsed drain current, TC = 25 °C ID puls 232 Short circuit current, Tj = – 55 ... + 150 °C ISC 147 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 2200 Power dissipation Ptot 170 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Semiconductor Group W K/W Rth JC Rth JA 1 ≤ 0.74 ≤ 45 04.97 BTS 240A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C IGSS Drain-source on-state resistance VGS = 10 V, ID =47 A RDS(on) V 50 – – 2.5 3.0 3.5 µA – – 0.1 10 1.0 100 – – 10 2.0 100 4.0 nA µA Ω – 0.012 0.018 20.0 43.0 – Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 47 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss S nF – 2.9 4.3 – 1.4 2.1 – 0.5 0.8 Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 50 75 – 150 230 Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 350 560 – 250 330 r f Semiconductor Group 2 ns BTS 240A Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 58 Pulsed source current I SM – – 232 Diode forward on-voltage I F = 116 A, VGS = 0 VSD – 1.6 2.0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V t rr – 100 – Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Q rr A V ns µC – 0.3 – 0.7 1.4 1.5 – – 10 Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C VTS(on) Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C ITS(on) Holding current, VTS(off) = 5 V, Tj = 25 °C Tj = 150 °C IH Switching temperature VTS = 5 V TTS(on) Turn-off time VTS = 5 V, ITS(on) = 2 mA toff Semiconductor Group 3 V mA – – 10 – – 600 0.05 0.05 0.1 0.2 0.5 0.3 150 – – 0.5 – 2.5 °C µs BTS 240A Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 – Drain-source voltage VDS 15 30 – Gate-source voltage VGS 6.4 5.1 – Short-circuit current ISC < 147 < 67 – A Short-circuit dissipation PSC < 2200 < 2000 – W Response time Tj = 25 °C, before short circuit tSC(off) < 25 < 25 – Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... +150°C Semiconductor Group ms Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C 4 V BTS 240A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C Semiconductor Group 5 BTS 240A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 47 A, VGS = 10 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V Semiconductor Group 6 BTS 240A Continuous drain current ID = f (TC) Parameter: VGS ≥ 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 240A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 240A Package Outlines TO-218 AA Standard Semiconductor Group Ordering Code C67078-S5100-A3 9