INFINEON C67078-A5100-A3

TEMPFET
BTS 240A
Features
●
●
●
●
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
1
Pin
1
2
3
G
D
S
2
Type
VDS
ID
RDS(on)
Package
Ordering Code
BTS 240A
50 V
58 A
0.018 Ω
TO-218AA
C67078-A5100-A3
3
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
50
V
Drain-gate voltage, RGS = 20 kΩ
VDGR
50
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 73 °C
ID
58
ISO drain current
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V
ID-ISO
21.0
A
Pulsed drain current,
TC = 25 °C
ID puls
232
Short circuit current,
Tj = – 55 ... + 150 °C
ISC
147
Short circuit dissipation, Tj = – 55 ... + 150 °C
PSCmax
2200
Power dissipation
Ptot
170
Operating and storage temperature range
Tj, Tstg
– 55 ... + 150
°C
DIN humidity category, DIN 40 040
–
E
–
IEC climatic category, DIN IEC 68-1
–
55/150/56
Thermal resistance
Chip-case
Chip-ambient
Semiconductor Group
W
K/W
Rth JC
Rth JA
1
≤ 0.74
≤ 45
04.97
BTS 240A
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VGS = VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
Tj = 25 °C
Tj = 125 °C
IDSS
Gate-source leakage current
VGS = 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
IGSS
Drain-source on-state resistance
VGS = 10 V, ID =47 A
RDS(on)
V
50
–
–
2.5
3.0
3.5
µA
–
–
0.1
10
1.0
100
–
–
10
2.0
100
4.0
nA
µA
Ω
–
0.012
0.018
20.0
43.0
–
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × RDS(on)max, ID = 47 A
gfs
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss
S
nF
–
2.9
4.3
–
1.4
2.1
–
0.5
0.8
Turn-on time ton, (ton = td(on) + tr)
td(on)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
–
50
75
–
150
230
Turn-off time toff, (toff = td(off) + tf)
td(off)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
–
350
560
–
250
330
r
f
Semiconductor Group
2
ns
BTS 240A
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous source current
IS
–
–
58
Pulsed source current
I SM
–
–
232
Diode forward on-voltage
I F = 116 A, VGS = 0
VSD
–
1.6
2.0
Reverse recovery time
I F = I S, diF/dt = 100 A/µs, VR = 30 V
t rr
–
100
–
Reverse recovery charge
I F = I S, diF/dt = 100 A/µs, VR = 30 V
Q rr
A
V
ns
µC
–
0.3
–
0.7
1.4
1.5
–
–
10
Temperature Sensor
Forward voltage
I TS(on) = 10 mA, Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on)
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on)
Holding current, VTS(off) = 5 V,
Tj = 25 °C
Tj = 150 °C
IH
Switching temperature
VTS = 5 V
TTS(on)
Turn-off time
VTS = 5 V, ITS(on) = 2 mA
toff
Semiconductor Group
3
V
mA
–
–
10
–
–
600
0.05
0.05
0.1
0.2
0.5
0.3
150
–
–
0.5
–
2.5
°C
µs
BTS 240A
Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter
Symbol
Examples
Unit
1
2
–
Drain-source voltage
VDS
15
30
–
Gate-source voltage
VGS
6.4
5.1
–
Short-circuit current
ISC
< 147
< 67
–
A
Short-circuit dissipation
PSC
< 2200
< 2000
–
W
Response time
Tj = 25 °C, before short circuit
tSC(off)
< 25
< 25
–
Short-circuit protection ISC = f (VDS)
Parameter: VGS
Diagram to determine ISC for Tj = – 55 ... +150°C
Semiconductor Group
ms
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj = – 55 ... + 150 °C
4
V
BTS 240A
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
BTS 240A
Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID = 47 A, VGS = 10 V (spread)
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6
BTS 240A
Continuous drain current ID = f (TC)
Parameter: VGS ≥ 10 V
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs (spread)
Typ. gate-source leakage current
IGSS = f (TC)
Parameter: VGS = 20 V, VDS = 0
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
Semiconductor Group
7
BTS 240A
Transient thermal impedance ZthJC = f (tp)
Parameter: D = tp/T
Semiconductor Group
8
BTS 240A
Package Outlines
TO-218 AA
Standard
Semiconductor Group
Ordering Code
C67078-S5100-A3
9