SIMOPAC® Module BSM 121 AR VDS = 200 V ID = 130 A R DS(on) = 20 mΩ ● ● ● ● ● ● Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 121 AR C67076-S1014-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage, RGS = 20 kΩ VDGR 200 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 130 Pulsed drain current, TC = 25 ˚C ID puls 390 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case Case-heat sink Rth JC Rth CH ≤ 0.18 ≤ 0.05 Insulation test voltage2), t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 1) 2) A K/W – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 200 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 80 A RDS(on) V 200 – – 2.1 3.0 4.0 µA – – 50 300 250 1000 – 10 100 nA mΩ – 18 20 gfs 60 75 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 10 13 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 3 4.5 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 0.7 1.0 Turn-on time ton (ton = td (on) + tr) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 Ω td (on) – 120 – tr – 60 – Turn-off time toff (toff = td (off) + tf) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 Ω td (off) – 240 – tf – 40 – Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 80 A Semiconductor Group 32 ns BSM 121 AR Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 260 A , VGS = 0 VSD Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V trr Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V Qrr Semiconductor Group A – – 130 – – 390 – 1.05 1.4 – 400 – V ns µC – 33 4.3 – BSM 121 AR Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: = 80 µs pulse test Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: = 80 µs pulse test, VDS = 25 V Semiconductor Group 34 BSM 121 AR Continuous drain-source current ID = f (TC) parameter: VGS ≥ 10 V, T j = 150 ˚C Drain-source breakdown voltage V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚ C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 80 A; VGS = 10 V (spread) Typical capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 35 BSM 121 AR Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 µs (spread) Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Semiconductor Group 36 BSM 121 AR Typ. gate charge VGS = f (Qgate) parameter: IDpuls = 200 A Semiconductor Group 37