BUZ 323 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 Ω TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A 15 Pulsed drain current IDpuls TC = 25 °C 60 Avalanche current,limited by Tjmax IAR 15 Avalanche energy,periodic limited by Tjmax EAR 18 Avalanche energy, single pulse EAS mJ ID = 15 A, VDD = 50 V, RGS = 25 Ω L = 6.14 mH, Tj = 25 °C 790 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 W 170 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.74 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 °C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 03/99 BUZ 323 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 400 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 400 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 400 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 9.5 A Semiconductor Group nA - 2 0.25 0.3 03/99 BUZ 323 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 9.5 A Input capacitance 8 pF - 2300 3000 - 320 480 - 120 180 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 14.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S gfs td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω Rise time - 40 65 - 75 115 - 270 350 - 130 170 tr VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω Semiconductor Group 3 03/99 BUZ 323 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed - - 60 V 1.1 1.5 trr ns - 145 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 15 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 30 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A IS µC - 4 7.8 - 03/99 BUZ 323 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 16 180 A W Ptot ID 140 120 12 10 100 8 80 6 60 4 40 2 20 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 0 tp = 1000.0ns 10 µs A /I D ID K/W ZthJC V DS 100 µs 10 -1 n) = 10 1 R DS (o 1 ms 10 ms D = 0.50 0.20 10 0 10 -2 0.10 0.05 10 -1 0 10 10 1 10 2 0.01 V 10 10 -3 -7 10 3 VDS Semiconductor Group 0.02 single pulse DC 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp 5 03/99 s 10 0 BUZ 323 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 34 0.9 Ptot = 170W l kj i h g A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS f e b c Ω VGS [V] a 4.0 28 24 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 b l 20.0 d 20 16 a c 12 8 RDS (on) 0.7 0.6 0.5 d 0.4 e f g h j i k 0.3 0.2 4 VGS [V] = 0.1 a 4.5 4.0 a 0 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 V 24 0 4 8 12 16 20 VDS A 26 A 15 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 18 15 A S 13 ID 12 gfs 14 11 12 10 9 10 8 7 8 6 6 5 4 4 3 2 1 0 0 2 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0 0 2 4 6 8 10 12 ID 6 03/99 BUZ 323 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 9.5 A, VGS = 10 V 1.3 4.6 Ω V 1.1 RDS (on) 98% 4.0 VGS(th) 1.0 3.6 0.9 3.2 0.8 2.8 0.7 2.4 0.6 typ 2% 2.0 0.5 98% 1.6 typ 0.4 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Typ. capacitances 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF Ciss C 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS Semiconductor Group 10 -1 0.0 7 03/99 3.0 BUZ 323 Avalanche energy EAS = ƒ(Tj) parameter: ID = 15 A, VDD = 50 V RGS = 25 Ω, L = 6.14 mH EAS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 22 A 800 16 mJ V VGS 600 12 500 10 400 8 300 6 200 4 100 2 0 20 40 60 80 100 120 °C 160 Tj 0 0 0,2 VDS max 20 40 60 80 0,8 VDS max 100 120 140 nC 170 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 03/99 BUZ 323 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 03/99